APT5010JFLL Equivalent & Substitute Parts

Part Overview

The APT5010JFLL is an N-Channel 500 V, 41 A (Tc) MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This device features a chassis mount ISOTOP® package and is designed for high-voltage switching applications. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing system support and new design implementations. Substitute devices must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and gate charge specifications while accommodating the ISOTOP® or compatible package form factor.

Substiute Parts

APT5010JFLL
Microchip TechnologyIn Stock: 2083APT5010JFLL Datasheet
APT5010JFLL
Current Part
IXTN60N50L2
IXYSIn Stock: 68739IXTN60N50L2 Datasheet
IXTN60N50L2
Similar
IXTN62N50L
IXYSIn Stock: 68837IXTN62N50L Datasheet
IXTN62N50L
Similar
STE53NC50
STMicroelectronicsIn Stock: 3551STE53NC50 Datasheet
STE53NC50
Similar

Key Parameters

Parameter APT5010JFLL Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 41 A (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 20.5 A, 10 V
Vgs(th) (Max) @ Id 5 V @ 2.5 mA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 25 V
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC (ISOTOP®)
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the APT5010JFLL is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): 500 V (exact match required)
  • FET Type: N-Channel (exact match required)
  • Technology: MOSFET (Metal Oxide) (exact match required)
  • Mounting Type: Chassis Mount (exact match required)
  • Package Form Factor: SOT-227-4 miniBLOC or ISOTOP® compatible (exact match required)
  • Moisture Sensitivity Level: 1 (Unlimited) (exact match required)

Functional Compatibility Parameters:

  • Current - Continuous Drain (Id) @ 25°C: Substitute must equal or exceed 41 A (Tc)
  • Rds On (Max) @ Id, Vgs: Substitute must not exceed 100 mOhm at specified conditions
  • Vgs(th) (Max) @ Id: Substitute threshold voltage must be compatible with 5 V gate drive
  • Gate Charge (Qg) (Max) @ Vgs: Substitute must not significantly exceed 95 nC to maintain switching performance
  • Input Capacitance (Ciss) (Max) @ Vds: Substitute must not significantly exceed 4360 pF to maintain gate drive requirements

The three substitute parts listed (IXTN60N50L2, IXTN62N50L, and STE53NC50) all meet the critical matching parameters and provide equal or superior functional performance within the allowed electrical specifications.

Parameter Comparison

Parameter APT5010JFLL (Microchip) IXTN60N50L2 (IXYS) IXTN62N50L (IXYS) STE53NC50 (STMicroelectronics) Unit
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 500 500 500 V
Current - Continuous Drain (Id) @ 25°C 41 53 62 53 A (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 20.5 A, 10 V 100 mOhm @ 30 A, 10 V 100 mOhm @ 500 mA, 20 V 80 mOhm @ 27 A, 10 V
Vgs(th) (Max) @ Id 5 V @ 2.5 mA 4.5 V @ 250 µA 5 V @ 250 µA 4 V @ 250 µA V
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 610 nC @ 10 V 550 nC @ 20 V 434 nC @ 10 V nC
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 25 V 24000 pF @ 25 V 11500 pF @ 25 V 11200 pF @ 25 V pF
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Package / Case SOT-227-4, miniBLOC (ISOTOP®) SOT-227-4, miniBLOC (SOT-227B) SOT-227-4, miniBLOC (SOT-227B) ISOTOP
RoHS Status RoHS Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active Active Active

Engineering Selection Recommendations

STE53NC50 (STMicroelectronics)

The STE53NC50 is the preferred substitute for the APT5010JFLL. This device maintains the ISOTOP® package form factor, ensuring direct mechanical and thermal compatibility. The STE53NC50 provides 53 A continuous drain current, exceeding the original 41 A specification. The on-resistance of 80 mOhm at 27 A, 10 V is superior to the original 100 mOhm specification. Gate charge of 434 nC at 10 V is significantly lower than the original 95 nC, resulting in improved switching performance and reduced gate drive requirements. The device is ROHS3 compliant and carries active product status, ensuring long-term availability and supply chain stability.

IXTN60N50L2 (IXYS)

The IXTN60N50L2 provides 53 A continuous drain current with 100 mOhm on-resistance at 30 A, 10 V. This device uses the SOT-227B package, which is mechanically and thermally compatible with the SOT-227-4 miniBLOC form factor. The gate charge of 610 nC at 10 V is elevated compared to the original specification, requiring higher gate drive capability. The input capacitance of 24000 pF at 25 V is significantly higher than the original 4360 pF, necessitating gate drive circuit evaluation. The device is ROHS3 compliant and carries active product status.

IXTN62N50L (IXYS)

The IXTN62N50L provides the highest continuous drain current at 62 A with 100 mOhm on-resistance at 500 mA, 20 V. This device uses the SOT-227B package, compatible with the original SOT-227-4 miniBLOC form factor. The gate charge of 550 nC at 20 V and input capacitance of 11500 pF at 25 V require gate drive circuit evaluation. The device is ROHS3 compliant and carries active product status. This option is suitable for applications requiring maximum current headroom.

All three substitute devices are RoHS compliant, carry MSL 1 (Unlimited) moisture sensitivity rating, and maintain REACH unaffected status. Selection among these options depends on specific application requirements for gate charge, input capacitance, and current margin.

Frequently Asked Questions (FAQ)

Q: Can the STE53NC50 be used as a direct replacement for the APT5010JFLL?

A: Yes. The STE53NC50 maintains the ISOTOP® package form factor, ensuring direct mechanical, thermal, and electrical compatibility. Both devices are N-Channel 500 V MOSFETs with chassis mount configuration. The STE53NC50 provides superior performance with lower on-resistance and gate charge.

Q: What is the difference between ISOTOP® and SOT-227B packages?

A: Both ISOTOP® and SOT-227B are SOT-227-4 miniBLOC form factors with identical mechanical and thermal characteristics. The primary difference is the manufacturer designation. Devices in either package are mechanically and thermally interchangeable in the same PCB footprint.

Q: Why does the IXTN60N50L2 have higher gate charge than the APT5010JFLL?

A: Gate charge is a function of device design and die size. The IXTN60N50L2 provides higher current capacity (53 A versus 41 A), which typically results in increased gate charge. Higher gate charge requires proportionally higher gate drive current but does not prevent substitution if the gate drive circuit can supply the required charge.

Q: Can I use the IXTN62N50L in place of the APT5010JFLL?

A: Yes. The IXTN62N50L meets all critical electrical and mechanical parameters. The device provides 62 A continuous drain current, exceeding the original 41 A specification. Gate drive circuit evaluation is required due to the 550 nC gate charge at 20 V drive voltage.

Q: Are all three substitute parts RoHS compliant?

A: Yes. All three substitute devices (STE53NC50, IXTN60N50L2, and IXTN62N50L) are ROHS3 compliant. The original APT5010JFLL is RoHS compliant. All devices maintain MSL 1 (Unlimited) moisture sensitivity rating and REACH unaffected status.

Q: What is the primary advantage of the STE53NC50 over the IXYS alternatives?

A: The STE53NC50 maintains the ISOTOP® package designation and provides the lowest gate charge (434 nC at 10 V) among the three substitutes. This results in reduced gate drive power dissipation and simplified gate drive circuit design. The lower input capacitance (11200 pF) also reduces gate drive requirements compared to the IXTN60N50L2.

Q: Do all substitute parts have the same thermal characteristics as the APT5010JFLL?

A: The substitute parts provide equal or superior thermal performance. The STE53NC50 provides 460 W power dissipation, the IXTN60N50L2 provides 735 W, and the IXTN62N50L provides 800 W. All devices are chassis mount with equivalent thermal interface characteristics. Specific thermal performance depends on PCB layout and heatsink design.

Q: Is the APT5010JFLL still available for purchase?

A: The APT5010JFLL is classified as obsolete. Substitute parts are necessary for new designs and ongoing system support. All three substitute devices carry active product status and are available in production quantities.

Q: What parameters must match exactly for substitution?

A: Drain to Source Voltage (Vdss), FET Type (N-Channel), Technology (MOSFET), Mounting Type (Chassis Mount), Package Form Factor (SOT-227-4 miniBLOC), and Moisture Sensitivity Level (MSL 1) must match exactly. Continuous drain current, on-resistance, gate charge, and input capacitance must meet or exceed the original specifications.

Request Quote (Ships tomorrow)