APT43F60B2 Equivalent & Substitute Parts

Part Overview

The APT43F60B2 is an N-Channel 600V 45A power MOSFET manufactured by Microchip Technology, designed for high-power switching applications requiring robust thermal performance and high current handling capability. This device operates in the POWER MOS 8™ series and is housed in a TO-247-3 through-hole package. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible packaging and thermal characteristics. Alternative devices may be required due to inventory availability, application-specific thermal requirements, or design optimization for reduced on-resistance or gate charge characteristics.

Substiute Parts

APT43F60B2
Microchip TechnologyIn Stock: 1183APT43F60B2 Datasheet
APT43F60B2
Current Part
IPW60R099CPAFKSA1
Infineon TechnologiesIn Stock: 989IPW60R099CPAFKSA1 Datasheet
IPW60R099CPAFKSA1
Similar
STW24N60M2
STMicroelectronicsIn Stock: 25755STW24N60M2 Datasheet
STW24N60M2
Similar

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 45 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 150 mOhm @ 21A, 10V
Gate Charge (Qg) (Max) @ Vgs 215 nC @ 10V
Power Dissipation (Max) 780 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
FET Type N-Channel MOSFET

Substitute Part Grouping Explanation

Substitution eligibility for the APT43F60B2 is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain to Source Voltage (Vdss): 600V minimum
  • Package Type: TO-247-3 through-hole configuration
  • FET Type: N-Channel MOSFET
  • Technology: Metal Oxide Semiconductor (MOSFET)
  • Mounting: Through Hole

Performance Compatibility Criteria:

  • Continuous Drain Current (Id): Minimum 31A at 25°C to support primary application requirements
  • Operating Temperature Range: Minimum -40°C to 150°C
  • Gate Charge (Qg): Lower values indicate improved switching performance
  • On-Resistance (Rds On): Lower values reduce power dissipation
  • Power Dissipation Capability: Minimum 150W to support thermal requirements

The identified substitute parts meet the mandatory electrical and mechanical criteria while offering variations in current handling, on-resistance characteristics, and thermal performance. Each substitute maintains 600V voltage rating, TO-247-3 packaging, and N-Channel MOSFET technology.

Parameter Comparison

Parameter APT43F60B2 (Microchip) IPW60R099CPAFKSA1 (Infineon) STW24N60M2 (STMicroelectronics)
Manufacturer Microchip Technology Infineon Technologies STMicroelectronics
Drain to Source Voltage (Vdss) 600V 600V 600V
Continuous Drain Current (Id) @ 25°C 45A (Tc) 31A (Tc) 18A (Tc)
Drive Voltage (Max Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 150 mOhm @ 21A, 10V 105 mOhm @ 18A, 10V 190 mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs 215 nC @ 10V 80 nC @ 10V 29 nC @ 10V
Power Dissipation (Max) 780W (Tc) 255W (Tc) 150W (Tc)
Operating Temperature Range -55°C to 150°C (TJ) -40°C to 150°C (TJ) -55°C to 150°C (TJ)
Package Type TO-247-3 TO-247-3 TO-247-3
FET Type N-Channel N-Channel N-Channel
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

APT43F60B2 (Microchip Technology) - Primary Selection

The APT43F60B2 provides the highest current handling capacity at 45A continuous drain current with 780W maximum power dissipation. This device is suitable for applications requiring maximum thermal performance and current delivery. Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating ensures long-term availability and environmental compliance.

IPW60R099CPAFKSA1 (Infineon Technologies) - Alternative for Automotive Applications

The IPW60R099CPAFKSA1 offers reduced on-resistance (105 mOhm) and significantly lower gate charge (80 nC) compared to the primary part, resulting in improved switching efficiency. This device carries AEC-Q101 automotive qualification and is suitable for applications where switching losses must be minimized. Continuous drain current of 31A supports moderate to high-power applications. Active product status with RoHS3 compliance is maintained.

STW24N60M2 (STMicroelectronics) - Alternative for Lower Current Applications

The STW24N60M2 features the lowest gate charge (29 nC) and operates in the MDmesh™ II Plus series, providing optimized switching characteristics for applications prioritizing fast switching transitions. Continuous drain current of 18A and 150W power dissipation limit this device to lower-power switching applications. Active product status with RoHS3 compliance and extended temperature range (-55°C to 150°C) is maintained.

All three devices maintain 600V voltage rating, TO-247-3 packaging, and N-Channel MOSFET technology. Selection should be based on specific application requirements for current handling, thermal dissipation, and switching performance.

Frequently Asked Questions (FAQ)

Q: Can the IPW60R099CPAFKSA1 directly replace the APT43F60B2 in all applications?

A: The IPW60R099CPAFKSA1 shares the same 600V voltage rating and TO-247-3 package, but provides lower continuous drain current (31A versus 45A) and reduced power dissipation capability (255W versus 780W). Direct substitution is valid only for applications where the required continuous current does not exceed 31A and thermal dissipation remains below 255W. Pin-to-pin compatibility is maintained through identical TO-247-3 packaging.

Q: What are the key differences in switching performance between these devices?

A: Gate charge (Qg) directly impacts switching speed and losses. The STW24N60M2 exhibits the lowest gate charge at 29 nC, followed by the IPW60R099CPAFKSA1 at 80 nC, and the APT43F60B2 at 215 nC. Lower gate charge reduces switching losses and enables faster switching transitions. Applications requiring high-frequency switching benefit from devices with lower gate charge values.

Q: Are all three devices suitable for -55°C operation?

A: The APT43F60B2 and STW24N60M2 both specify -55°C minimum operating temperature. The IPW60R099CPAFKSA1 specifies -40°C minimum operating temperature. For applications requiring operation below -40°C, the APT43F60B2 or STW24N60M2 must be selected.

Q: What is the significance of on-resistance (Rds On) differences?

A: On-resistance directly determines conduction losses and heat generation. The IPW60R099CPAFKSA1 provides the lowest on-resistance at 105 mOhm, reducing power dissipation during continuous conduction. The APT43F60B2 at 150 mOhm and STW24N60M2 at 190 mOhm exhibit higher conduction losses. Applications with high continuous current benefit from lower on-resistance values.

Q: Are these devices pin-compatible?

A: All three devices use the TO-247-3 package with identical pin configuration. Physical and electrical pin compatibility is maintained across all three parts, enabling direct socket substitution when electrical parameters are within application requirements.

Q: What compliance certifications apply to these devices?

A: All three devices maintain RoHS3 compliance and unlimited moisture sensitivity rating (MSL 1). The IPW60R099CPAFKSA1 additionally carries AEC-Q101 automotive qualification, making it suitable for automotive-grade applications. All devices are REACH unaffected and classified under ECCN EAR99.

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