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Equivalent & Substitute Parts Reference: APT41M80L
Part Overview
APT41M80L is an N-Channel MOSFET designed for high-voltage and high-current applications in the Transistors, FETs, MOSFETs category. Featuring a drain-to-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 43A (Tc), this device offers a robust solution for power switching and control. The part is currently active, ROHS3 compliant, and REACH unaffected, indicating wide availability and regulatory acceptance. Identifying substitute models is necessary to address supply constraints, design alternate sourcing, or ensure continued production when inventory fluctuations arise.
Substiute Parts
Key Parameters
| Manufacturer Part Number | Category | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status | REACH Status | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT41M80L | Transistors, FETs, MOSFETs | 800 V | 43A (Tc) | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10V | ±30V | 8070 pF @ 25V | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | REACH Unaffected | Active |
Substitute Part Grouping Explanation
Substitution for APT41M80L is based strictly on the equivalence of core electrical and mechanical parameters as permitted for Transistors, FETs, MOSFETs. The substitute part, IXFK32N80Q3, is selected by matching the following key criteria: FET type (N-Channel), technology (MOSFET), drain-to-source voltage (800 V), power dissipation, gate characteristics, operating temperature range, mounting type (Through Hole), package compatibility (TO-264AA), RoHS/REACH status, and active product availability.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Category | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Package / Case | RoHS Status | REACH Status | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT41M80L | Microchip Technology | Transistors, FETs, MOSFETs | 800 V | 43A (Tc) | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10V | ±30V | 8070 pF @ 25V | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | REACH Unaffected | Active |
| IXFK32N80Q3 | IXYS | Transistors, FETs, MOSFETs | 800 V | 32A (Tc) | 270mOhm @ 16A, 10V | 6.5V @ 4mA | 140 nC @ 10V | ±30V | 6940 pF @ 25V | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | ROHS3 Compliant | REACH Unaffected | Active |
Engineering Selection Recommendations
Both APT41M80L and IXFK32N80Q3 are active products and ROHS3 compliant with REACH unaffected status, matching current regulatory and quality requirements. Moisture Sensitivity Level (MSL) is specified as 1 (Unlimited) for both. Package compatibility is ensured with TO-264-3, TO-264AA. These match criteria for immediate substitution within standard qualification protocols.
Frequently Asked Questions (FAQ)
Q1: What are the essential criteria for substituting APT41M80L with another MOSFET?
A1: Substitution is strictly based on matching FET type, drain-to-source voltage, continuous drain current, Rds On, gate threshold voltage, gate charge, input capacitance, power dissipation, operating temperature range, mounting type, and package/case compatibility.
Q2: Is the package format the same for APT41M80L and IXFK32N80Q3?
A2: Both APT41M80L and IXFK32N80Q3 use TO-264-3, TO-264AA packages, and mount through hole.
Q3: Do both components comply with RoHS and REACH regulations?
A3: Both APT41M80L and IXFK32N80Q3 are ROHS3 compliant and REACH unaffected, fulfilling key regulatory criteria.
Q4: How do the electrical ratings of IXFK32N80Q3 compare to APT41M80L?
A4: IXFK32N80Q3 matches the drain-to-source voltage (800 V) but the continuous drain current is 32A versus 43A for APT41M80L. Other electrical parameters are provided above for detailed comparison.
Q5: What mounting type and device packaging are supported for these MOSFETs?
A5: Both MOSFETs support through hole mounting and use the TO-264-3, TO-264AA package format.
Q6: Can IXFK32N80Q3 be directly exchanged in an assembly designed for APT41M80L?
A6: Based on provided package, mounting, and compliance parameters, IXFK32N80Q3 matches required form factors and statuses specified for substitution.
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