APT34M60S Equivalent & Substitute Parts

Part Overview

The APT34M60S is an N-Channel 600V 36A power MOSFET manufactured by Microchip Technology, housed in a D3PAK surface mount package. This device is part of the POWER MOS 8™ series and is classified as Active product status. The APT34M60S is designed for high-voltage switching applications requiring continuous drain current capability at elevated temperatures. Substitute parts are identified when equivalent electrical characteristics and mechanical compatibility are required due to inventory constraints, supply chain considerations, or design flexibility needs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	36	A (Tc)
Rds On (Max) @ 17A, 10V	190	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	5	V
Gate Charge (Qg) @ 10V	165	nC
Power Dissipation (Max)	624	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	D3PAK (TO-268-3)	Surface Mount
Vgs (Max)	±30	V
Input Capacitance (Ciss) @ 25V	6640	pF

Substitute Part Grouping Explanation

Substitution of the APT34M60S is based on strict electrical and mechanical parameter equivalence. The primary substitute identified is the APT34F60S, also manufactured by Microchip Technology. Both devices share identical specifications across all critical parameters that determine functional interchangeability:

Key Parameters for Substitution Equivalence:

Drain to Source Voltage (Vdss): 600V
Continuous Drain Current (Id): 36A @ 25°C
On-State Resistance (Rds On): 190mOhm @ 17A, 10V
Gate Threshold Voltage: 5V @ 1mA
Gate Charge: 165nC @ 10V
Power Dissipation: 624W (Tc)
Operating Temperature Range: -55°C to 150°C
Package: D3PAK (TO-268-3) Surface Mount
Maximum Gate Voltage: ±30V
Input Capacitance: 6640pF @ 25V

Both devices are classified as Active products within the POWER MOS 8™ series and maintain identical compliance certifications (RoHS3, REACH Unaffected, EAR99).

Parameter Comparison

Parameter	APT34M60S	APT34F60S	Match
Manufacturer	Microchip Technology	Microchip Technology	Yes
FET Type	N-Channel	N-Channel	Yes
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Yes
Drain to Source Voltage (Vdss)	600V	600V	Yes
Continuous Drain Current (Id) @ 25°C	36A (Tc)	36A (Tc)	Yes
Drive Voltage (Max Rds On)	10V	10V	Yes
Rds On (Max) @ 17A, 10V	190mOhm	190mOhm	Yes
Vgs(th) (Max) @ 1mA	5V	5V	Yes
Gate Charge (Qg) @ 10V	165nC	165nC	Yes
Vgs (Max)	±30V	±30V	Yes
Input Capacitance (Ciss) @ 25V	6640pF	6640pF	Yes
Power Dissipation (Max)	624W (Tc)	624W (Tc)	Yes
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	Yes
Mounting Type	Surface Mount	Surface Mount	Yes
Package / Case	TO-268-3, D³Pak	TO-268-3, D³Pak	Yes
Series	POWER MOS 8™	POWER MOS 8™	Yes
Product Status	Active	Active	Yes
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Yes
REACH Status	REACH Unaffected	REACH Unaffected	Yes
ECCN	EAR99	EAR99	Yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Yes

Engineering Selection Recommendations

The APT34F60S is a direct parametric equivalent to the APT34M60S. Both devices are manufactured by Microchip Technology and classified as Active products within the POWER MOS 8™ series. Selection between these two parts is based on availability and supply chain considerations rather than electrical or mechanical differences.

Both parts comply with RoHS3 requirements and maintain REACH Unaffected status. Both are classified under ECCN EAR99 and carry identical Moisture Sensitivity Level (MSL) ratings of 1 (Unlimited). The D3PAK surface mount package is identical for both devices, ensuring mechanical compatibility in existing PCB layouts and assembly processes.

The APT34F60S currently maintains higher inventory availability (900 pieces) compared to the APT34M60S (641 pieces), which may influence procurement decisions in high-volume production scenarios.

Frequently Asked Questions (FAQ)

Q: Can the APT34F60S be used as a direct replacement for the APT34M60S in existing designs?

A: Yes. The APT34F60S is a parametric equivalent with identical electrical specifications and D3PAK package configuration. No circuit modifications or PCB layout changes are required.

Q: Are there any differences in gate drive requirements between these two parts?

A: No. Both devices share identical gate threshold voltage (5V @ 1mA), gate charge (165nC @ 10V), and maximum gate voltage (±30V) specifications. Gate drive circuits designed for the APT34M60S operate identically with the APT34F60S.

Q: Do both parts have the same thermal characteristics?

A: Yes. Both devices are rated for identical power dissipation (624W Tc) and operating temperature range (-55°C to 150°C TJ). Thermal management strategies and heatsink requirements remain unchanged.

Q: Are the package dimensions identical between APT34M60S and APT34F60S?

A: Yes. Both devices use the D3PAK (TO-268-3) surface mount package with identical lead configuration and footprint. PCB layouts and assembly processes require no modification.

Q: What is the significance of the different base product numbers (APT34M60 vs. APT34F60)?

A: The base product number variation reflects internal Microchip Technology product line differentiation. The electrical and mechanical specifications remain identical, and both are qualified for equivalent applications.

Q: Are compliance certifications identical for both parts?

A: Yes. Both the APT34M60S and APT34F60S carry identical RoHS3 compliance, REACH Unaffected status, EAR99 ECCN classification, and MSL 1 (Unlimited) moisture sensitivity ratings.

Q: Can these parts be mixed in the same production batch?

A: Yes. Since both parts are parametrically equivalent with identical specifications and package configurations, they can be used interchangeably within the same design and production environment.

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