Equivalent & Substitute Parts for APT32M80J

Part Overview

APT32M80J, manufactured by Microchip Technology, is an N-Channel power MOSFET categorized under Transistors, FETs, MOSFETs. This device features a high Drain to Source Voltage (Vdss) of 800 V, continuous drain current of 33A (Tc), and a maximum power dissipation of 543W. It is supplied in a SOT-227-4, miniBLOC ISOTOP® chassis mount package. The product is currently active, RoHS3 compliant, and REACH unaffected.

Locating alternative models or equivalent MOSFETs is essential for applications requiring continuity of supply, multi-sourcing, or design flexibility. Equivalent substitute identification is strictly based on matching electrical performance, thermal ratings, compliance, and package compatibility.

Substiute Parts

APT32M80J

Microchip TechnologyIn Stock: 989APT32M80J Datasheet

Current PartRFQ

IXFN44N80Q3

IXYSIn Stock: 1216IXFN44N80Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute MOSFETs are grouped and considered equivalent strictly when the following key electrical and mechanical parameters align: Drain to Source Voltage (Vdss), continuous drain current (Id) at 25°C, maximum Rds On at specified current and gate voltage, Vgs(th) (Max) at specified Id, maximum gate charge (Qg) at specified Vgs, gate-source voltage range (Vgs Max), input capacitance (Ciss), power dissipation (Max) at case temperature, operating temperature range, compatible mounting type, identical package or case, and regulatory compliance (RoHS/REACH). Only devices satisfying all the above listed criteria are considered valid substitutes.

Parameter Comparison

Engineering Selection Recommendations

Both APT32M80J and IXFN44N80Q3 are listed as active products and have full RoHS3 compliance and REACH unaffected status. Selection between these MOSFETs can be based on their compliance and active lifecycle status, ensuring alignment with regulatory and supply chain requirements.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria to substitute APT32M80J with IXFN44N80Q3?
A1: Substitution is based strictly on matching drain-source voltage (Vdss), continuous drain current (Id), Rds On at specified test conditions, gate-source voltage (Vgs Max), input capacitance (Ciss), power dissipation, package compatibility, operating temperature range, and compliance certifications (RoHS, REACH).

Q2: Are there any differences in the package between APT32M80J and IXFN44N80Q3?
A2: Both MOSFETs are supplied in SOT-227-4, miniBLOC chassis mount packages, ensuring mechanical and mounting compatibility.

Q3: Is regulatory compliance the same for both devices?
A3: Both APT32M80J and IXFN44N80Q3 are ROHS3 compliant and REACH unaffected.

Q4: Can these substitute MOSFETs be directly interchanged in a design?
A4: Substitute status is determined solely by the alignment of the key described parameters, including electrical performance, package, and compliance.

Q5: Which parameter grouping ensures correct substitute selection for power MOSFETs in this category?
A5: Correct selection is ensured by matching Vdss, Id, Rds On, power dissipation, gate charge, voltage tolerances, package type, operating temperature, and compliance status.