Equivalent & Substitute Parts for APT30M85BVRG

Part Overview

The APT30M85BVRG from Microchip Technology is an N-Channel Power MOSFET in the TO-247 [B] package, designed for high voltage and current operation (300V, 40A, 300W). It is primarily used in power supply, motor control, and switching applications. The part is currently active and compliant with ROHS3 and REACH standards, with an unlimited moisture sensitivity level. When specific inventory constraints, lead time issues, or operational compatibility arise, identifying equivalent or substitute models with matching critical parameters becomes necessary to ensure continued production and system reliability.

Substiute Parts

APT30M85BVRG

Microchip TechnologyIn Stock: 200408APT30M85BVRG Datasheet

Current PartRFQ

IXFH50N30Q3

IXYSIn Stock: 3302IXFH50N30Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Identification of substitute power MOSFETs in the same category is based strictly on the following critical electrical and mechanical parameters: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds(on), Vgs(th), gate charge (Qg), maximum gate-source voltage (Vgs), input capacitance (Ciss), power dissipation, operating temperature range, mounting type, package type, RoHS status, moisture sensitivity level, and REACH status. Only parts that match or exceed the operational requirements and comply with relevant regulatory statuses are considered valid substitutes.

Parameter Comparison

Engineering Selection Recommendations

Both APT30M85BVRG and IXFH50N30Q3 are active, RoHS3 compliant, and REACH unaffected. Both parts have a moisture sensitivity level of 1 (unlimited), which is suitable for standard handling and storage procedures. Selection between these devices should consider only the product status and compliance information as provided.

Frequently Asked Questions (FAQ)

Q1: What key parameters must match for a MOSFET to be considered a substitute?
A1: Key parameters include FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds(on), Vgs(th), gate charge (Qg), Vgs (max), input capacitance (Ciss), power dissipation (max), operating temperature range, mounting type, package, and compliance information.

Q2: Are the TO-247 [B] and TO-247AD (IXFH) packages functionally interchangeable?
A2: Both devices are through hole and use the TO-247-3 case. Mechanical compatibility should be reviewed based on the provided device package code.

Q3: Do both APT30M85BVRG and IXFH50N30Q3 meet industry environmental compliance requirements?
A3: Both parts are ROHS3 compliant, have a moisture sensitivity level of 1 (unlimited), and are REACH unaffected.

Q4: Does the substitute part offer equal or higher electrical performance?
A4: The substitute part IXFH50N30Q3 offers an equal or greater drain current and power dissipation. All values are explicitly listed.

Q5: Can users select IXFH50N30Q3 as a direct replacement based on compliance and category?
A5: IXFH50N30Q3 has the same transistor category, matching compliance standards, and analogous mechanical and electrical features as listed.