Equivalent & Substitute Parts Reference: APT30M36LLLG

Part Overview

APT30M36LLLG is a N-channel MOSFET designed for power applications, featuring a Drain to Source Voltage of 300 V, a continuous drain current of 84A (Tc), and a maximum Rds On of 36mOhm. It is offered in a TO-264 [L] through-hole package. The product is active with RoHS3 and REACH compliance, distributed by Microchip Technology. Finding equivalent or substitute MOSFET models is essential to ensure supply continuity and design flexibility, especially in applications where mechanical form factor, electrical ratings, and compliance standards are critical.

Substiute Parts

APT30M36LLLG
Microchip TechnologyIn Stock: 1053APT30M36LLLG Datasheet
APT30M36LLLG
Current Part
IXFH94N30P3
IXYSIn Stock: 932IXFH94N30P3 Datasheet
IXFH94N30P3
Similar

Key Parameters

ParameterAPT30M36LLLG
FET TypeN-Channel
Drain to Source Voltage (Vdss)300 V
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 42A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6480 pF @ 25 V
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
Product StatusActive

Substitute Part Grouping Explanation

Substitute MOSFETs are classified using only the provided electrical and mechanical parameters: FET type, Drain to Source Voltage, continuous drain current, maximum Rds On, gate threshold voltage, gate charge, input capacitance, mounting type, package/case, and compliance status. Only parts matching these parameters for form, fit, and function are considered for substitution.

Parameter Comparison

Parameter APT30M36LLLG IXFH94N30P3
FET TypeN-ChannelN-Channel
Drain to Source Voltage (Vdss)300 V300 V
Current - Continuous Drain (Id) @ 25°C84A (Tc)94A (Tc)
Rds On (Max) @ Id, Vgs36mOhm @ 42A, 10V36mOhm @ 47A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs115 nC @ 10 V102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6480 pF @ 25 V5510 pF @ 25 V
Mounting TypeThrough HoleThrough Hole
Package / CaseTO-264-3, TO-264AATO-247-3
RoHS StatusROHS3 CompliantROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)1 (Unlimited)
REACH StatusREACH UnaffectedREACH Unaffected
Product StatusActiveActive

Engineering Selection Recommendations

Selection of APT30M36LLLG and IXFH94N30P3 can be made based on their active product status and uniform RoHS3 and REACH compliance, as well as identical moisture sensitivity levels. Electrical parameters determining substitute suitability are directly matched based on the input. Package/case differences should be evaluated as per application mechanical requirements.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for substituting APT30M36LLLG with IXFH94N30P3?
A1: Substitution is determined by matching FET type, Drain to Source Voltage, continuous drain current, maximum Rds On, gate threshold voltage, gate charge, input capacitance, mounting type, package/case, and compliance certifications.

Q2: Are package differences important when selecting a substitute MOSFET?
A2: Yes, mechanical compatibility is critical. APT30M36LLLG uses TO-264-3, while IXFH94N30P3 uses TO-247-3. Confirm package fit for board layout and thermal management.

Q3: How do compliance parameters affect substitution?
A3: Substitutes must match RoHS and REACH status, as well as moisture sensitivity level (MSL) for process compatibility and regulatory adherence.

Q4: Why is continuous drain current significant in choosing substitutes?
A4: The continuous drain current rating ensures the substitute can handle required load currents without exceeding its specified limits.

Q5: What information is essential when evaluating electrical compatibility?
A5: Evaluate Drain to Source Voltage, continuous drain current, Rds On, Vgs(th), gate charge, and input capacitance by direct comparison of input specifications only.

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