APT29F100L N-Channel 1000V 30A MOSFET Equivalent & Substitute Parts

Part Overview

The APT29F100L is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Microchip Technology, rated for 1000V drain-to-source voltage with 30A continuous drain current at 25°C. The device is housed in a TO-264 package for through-hole mounting applications. This component is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are identified when design requirements permit operation within specified electrical and mechanical parameter ranges, or when inventory constraints necessitate alternative sourcing from qualified manufacturers.

Substiute Parts

APT29F100L

Microchip TechnologyIn Stock: 1486APT29F100L Datasheet

Current PartRFQ

IXFK24N100Q3

IXYSIn Stock: 2658IXFK24N100Q3 Datasheet

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IXFK26N120P

IXYSIn Stock: 1236IXFK26N120P Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the APT29F100L are qualified based on the following criteria:

Primary Substitution Parameters:

• FET Type: N-Channel topology
• Drain to Source Voltage (Vdss): Equal to or greater than 1000V
• Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 30A
• Mounting Type: Through Hole
• Package / Case: TO-264-3 or TO-264AA compatible
• Operating Temperature Range: Minimum -55°C to maximum 150°C (TJ)
• RoHS Status: ROHS3 Compliant
• Technology: MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

• Drive Voltage (Max Rds On): 10V
• Vgs (Max): ±30V
• Operating Temperature: -55°C ~ 150°C (TJ)

Substitute parts must satisfy all primary parameters to ensure functional equivalence in the target application. Secondary parameters are evaluated for performance optimization and thermal management considerations.

Parameter Comparison

Engineering Selection Recommendations

APT29F100L (Microchip Technology)

The APT29F100L is the primary component specification. Selection is appropriate for applications requiring 1000V blocking voltage with 30A continuous drain current. This device delivers maximum power dissipation of 1040W at case temperature and is suitable for high-frequency switching applications in industrial power conversion circuits.

IXFK24N100Q3 (IXYS) - Partial Substitute

The IXFK24N100Q3 operates at identical 1000V drain-to-source voltage with 24A continuous drain current. This represents a 20% reduction in current rating compared to the APT29F100L. The device is suitable for applications where the required continuous drain current does not exceed 24A. Power dissipation is rated at 1000W (Tc), providing comparable thermal performance. Both devices share identical operating temperature range (-55°C to 150°C TJ), drive voltage specification (10V), and maximum gate voltage (±30V). RoHS3 compliance and MSL 1 rating are maintained. The IXFK24N100Q3 belongs to the HiPerFET™ Q3 Class series from IXYS.

IXFK26N120P (IXYS) - Partial Substitute

The IXFK26N120P operates at 1200V drain-to-source voltage with 26A continuous drain current. This device provides 200V higher blocking voltage than the APT29F100L, suitable for applications requiring enhanced voltage margin. The 26A current rating represents a 13% reduction from the APT29F100L specification. Power dissipation is rated at 960W (Tc). Operating temperature range, drive voltage, and maximum gate voltage specifications are identical to the APT29F100L. RoHS3 compliance and MSL 1 rating are maintained. The IXFK26N120P belongs to the HiPerFET™ Polar series from IXYS.

Substitution Constraints:

Both IXYS alternatives present reduced continuous drain current ratings relative to the APT29F100L. Selection of either substitute requires confirmation that application current requirements do not exceed the respective device ratings. Applications demanding the full 30A continuous drain current specification of the APT29F100L cannot be satisfied by either substitute without circuit redesign or parallel device configuration.

Frequently Asked Questions (FAQ)

Q: Can the IXFK24N100Q3 directly replace the APT29F100L in all applications?

A: The IXFK24N100Q3 is a partial substitute limited by its 24A continuous drain current rating. Direct replacement is valid only for applications where continuous drain current does not exceed 24A. Applications requiring the full 30A specification of the APT29F100L require alternative solutions.

Q: What is the primary difference between the IXFK24N100Q3 and IXFK26N120P?

A: The IXFK24N100Q3 maintains 1000V drain-to-source voltage matching the APT29F100L, while the IXFK26N120P provides 1200V blocking voltage. The IXFK24N100Q3 is rated for 24A continuous drain current, whereas the IXFK26N120P is rated for 26A. Selection depends on whether the application requires higher voltage blocking capability or current capacity.

Q: Are the TO-264 and TO-264AA packages mechanically compatible?

A: Both the APT29F100L and substitute parts are specified for TO-264-3 and TO-264AA package designations. These packages are mechanically compatible for through-hole mounting applications. Pin configuration and lead spacing conform to standard TO-264 specifications.

Q: Do all three devices meet RoHS3 compliance requirements?

A: Yes. The APT29F100L, IXFK24N100Q3, and IXFK26N120P are all RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level rating. All devices are REACH Unaffected and classified under ECCN EAR99.

Q: What thermal considerations apply when selecting between these devices?

A: The APT29F100L provides maximum power dissipation of 1040W (Tc). The IXFK24N100Q3 is rated for 1000W (Tc), and the IXFK26N120P is rated for 960W (Tc). All devices operate across the identical temperature range of -55°C to 150°C (TJ). Thermal management design must account for the specific power dissipation rating of the selected device.

Q: Can multiple substitute devices be paralleled to achieve 30A continuous drain current?

A: Parallel device configurations are outside the scope of this equivalency reference. Such applications require detailed circuit analysis, gate drive considerations, and thermal management design beyond the parameters specified in this document.

Q: What is the significance of the different IXYS series designations (HiPerFET™ Q3 Class vs. HiPerFET™ Polar)?

A: Series designations indicate different technology implementations within the IXYS product portfolio. Both series maintain compatibility with the specified electrical and mechanical parameters for substitution evaluation. Series designation does not affect the substitution criteria established in this reference.