Equivalent & Substitute Parts Reference: APT22F120B2

Part Overview

The Microchip Technology APT22F120B2 is an N-Channel MOSFET designed for high-voltage, high-current applications within the Transistors, FETs, MOSFETs category. It offers a Drain-to-Source voltage (Vdss) of 1200 V, a continuous drain current (Id) of 23A, and a maximum power dissipation of 1040W, supplied in T-MAX™ [B2] through-hole packaging. The product is currently active and compliant with ROHS3 and REACH standards. Identifying alternative MOSFET models is necessary for engineering projects that require immediate availability, secondary sourcing, or design flexibility within compatible specifications.

Key Parameters

Parameter	APT22F120B2
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Rds On (Max) @ Id, Vgs	700mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	8370 pF @ 25 V
Power Dissipation (Max)	1040W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Alternative and equivalent MOSFETs are grouped based strictly on matching key electrical and mechanical parameters relevant for substitution within the Transistors, FETs, MOSFETs category. The parameters used for equivalency include Drain-to-Source Voltage (Vdss), continuous drain current (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum Vgs, input capacitance (Ciss), power dissipation, operating temperature range, mounting type, package type, and compliance certifications. Substitution is limited to only provided, compatible parameter values.

Parameter Comparison

Parameter	APT22F120B2	STW12N120K5
Manufacturer	Microchip Technology	STMicroelectronics
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
Drain to Source Voltage (Vdss)	1200 V	1200 V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)	12A (Tc)
Rds On (Max) @ Id, Vgs	700mOhm @ 12A, 10V	690mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA	5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V	44.2 nC @ 10 V
Vgs (Max)	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	8370 pF @ 25 V	1370 pF @ 100 V
Power Dissipation (Max)	1040W (Tc)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-247-3 Variant	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99

Engineering Selection Recommendations

APT22F120B2 and STW12N120K5 are active status products, both compliant with ROHS3 and unaffected by REACH. Both parts have ECCN EAR99 classification. Only confirmed parameters and certifications provided are considered when selecting substitutes.

Frequently Asked Questions (FAQ)

Q1. What key parameters must match for MOSFET substitution in this category?
A1. Drain-to-Source Voltage (Vdss), continuous drain current (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum Vgs, input capacitance (Ciss), power dissipation, operating temperature, mounting type, package, and compliance certifications.

Q2. Are APT22F120B2 and STW12N120K5 compatible in terms of packaging?
A2. Both parts are supplied in TO-247-3 based through-hole packages.

Q3. Is regulatory compliance assured for both the main and substitute parts?
A3. Both parts are ROHS3 compliant, REACH unaffected, and have ECCN EAR99 status.

Q4. What is the significance of the series and product status?
A4. Series designation assists in identifying product family compatibility, while active status confirms availability for direct component selection.

Q5. Can power dissipation and current ratings differ between substitutes?
A5. Parameter differences are reflected in the comparison table; selection must be based on required electrical specifications and identical compliance validations.

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