APT21M100J Equivalent & Substitute Parts Reference

Part Overview

The APT21M100J is a high-voltage, N-channel power MOSFET in the ISOTOP® package, manufactured by Microchip Technology. It features 1000 V Vdss, a continuous drain current of 21A (Tc), and a maximum Rds On of 380mOhm at 16A, 10V. The product is active and classified under the Transistors, FETs, MOSFETs category. Engineering situations such as inventory constraints, operational specification requirements, lifecycle considerations, or compliance needs may necessitate identifying and verifying alternative models with matching key electrical and mechanical parameters.

Key Parameters

Parameter	Main Part (APT21M100J)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	8500 pF @ 25 V
Power Dissipation (Max)	462W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	ISOTOP®
Package / Case	SOT-227-4, miniBLOC
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitutes for the APT21M100J are grouped strictly according to the following parameters:

FET Type: Must be N-Channel
Technology: MOSFET (Metal Oxide)
Maximum Rated Drain to Source Voltage (Vdss)
Continuous Drain Current (Id) @ 25°C
Maximum Rds On at specified Id and Vgs
Gate-source voltage limits (Vgs range and threshold)
Gate charge value for drive compatibility
Input capacitance (Ciss)
Power dissipation
Mechanical compatibility: Mounting type and package/case
Compliance: RoHS status, REACH status, MSL, and ECCN

Only parts meeting these criteria without exceeding the main part's mechanical or electrical limits are eligible as substitutes.

Parameter Comparison

Parameter	Main Part (APT21M100J)	Substitute (IXFN30N120P)
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V	1200 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 16A, 10V	350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	260 nC @ 10 V	310 nC @ 10 V
Vgs (Max)	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	8500 pF @ 25 V	19000 pF @ 25 V
Power Dissipation (Max)	462W (Tc)	890W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount	Chassis Mount
Supplier Device Package	ISOTOP®	SOT-227B
Package / Case	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99

Engineering Selection Recommendations

Both APT21M100J and IXFN30N120P have active product statuses, are classified as EAR99, and comply with ROHS3 and REACH regulations. Both have a Moisture Sensitivity Level of 1 (Unlimited) and are available in chassis mount, SOT-227-4, miniBLOC packages, ensuring compatibility for manufacturing and supply chain requirements based on the provided parameters.

Frequently Asked Questions (FAQ)

Q1: What are the primary parameters that determine substitutability for APT21M100J MOSFETs?
A1: The primary substitution criteria are FET type, technology, drain to source voltage (Vdss), current rating (Id), Rds On, package/case (SOT-227-4, miniBLOC), mounting type, and compliance attributes (RoHS, REACH, ECCN, MSL).

Q2: Are APT21M100J and IXFN30N120P mechanically compatible?
A2: Both devices share the SOT-227-4, miniBLOC package designation and chassis mounting, satisfying physical and mechanical compatibility requirements.

Q3: What compliance standards do both parts meet?
A3: Both the APT21M100J and IXFN30N120P are ROHS3 compliant, REACH unaffected, and classified under ECCN: EAR99 with a Moisture Sensitivity Level of 1 (Unlimited).

Q4: Why is package/case matching critical when selecting a substitute?
A4: Matching the package/case ensures the substitute part will fit the physical footprint, thermal, and mounting constraints of the original design, maintaining system reliability and manufacturability.

Q5: How should electrical parameter matching be viewed when comparing these MOSFETs?
A5: Electrical parameters such as Vdss, Id, Rds On, gate charge, and input capacitance must align within the original application’s requirements to maintain functional equivalence. Only parameters provided are considered for comparison.

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