APT20M45BVRG Equivalent & Substitute Parts Reference

Part Overview

The APT20M45BVRG is an N-Channel 200 V, 56A (Tc), 300W (Tc) MOSFET (Metal Oxide) in a TO-247 [B] through-hole package. Classified under the Transistors, FETs, MOSFETs category, this device is intended for high-power switching applications. It is an active product in the POWER MOS V® series from Microchip Technology. Reasons for seeking alternative models typically include securing supply chain continuity, form-factor requirements, or adhering to specific RoHS and REACH compliance standards.

Substiute Parts

APT20M45BVRG
Microchip TechnologyIn Stock: 3506APT20M45BVRG Datasheet
APT20M45BVRG
Current Part
IXTH60N20L2
IXYSIn Stock: 5913IXTH60N20L2 Datasheet
IXTH60N20L2
Similar
IXTQ60N20L2
IXYSIn Stock: 749IXTQ60N20L2 Datasheet
IXTQ60N20L2
Similar

Key Parameters

ParameterAPT20M45BVRG
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs45mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4860 pF @ 25 V
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
Package / CaseTO-247-3
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Product StatusActive

Substitute Part Grouping Explanation

Substitutes for the APT20M45BVRG are identified based strictly on a match or suitability in the following key parameters: FET type, technology, drain to source voltage (Vdss), continuous drain current (Id) at 25°C, maximum Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum power dissipation, operating temperature range, mounting type, package compatibility, RoHS/REACH status, and product activity status. Only devices in the same category (Transistors, FETs, MOSFETs) and similar package form-factors are included.

Parameter Comparison

Parameter APT20M45BVRG IXTH60N20L2 IXTQ60N20L2
Manufacturer Microchip Technology IXYS IXYS
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 500mA, 10V 45mOhm @ 30A, 10V 45mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 10 V 255 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4860 pF @ 25 V 10500 pF @ 25 V 10500 pF @ 25 V
Power Dissipation (Max) 300W (Tc) 540W (Tc) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 [B] TO-247 (IXTH) TO-3P
Package / Case TO-247-3 TO-247-3 TO-3P-3, SC-65-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

The primary engineering basis for interchangeability among the APT20M45BVRG, IXTH60N20L2, and IXTQ60N20L2 MOSFETs is alignment in RoHS3 compliance, REACH status, and product activity status. All listed MOSFET part numbers are active and compliant with major regulations, supporting direct use in regulated and environmentally conscious applications. Careful evaluation of package compatibility (TO-247 versus TO-3P) is critical based on existing PCB or mechanical assembly requirements.

Frequently Asked Questions (FAQ)

Q1: What parameters are essential for selecting substitute MOSFETs in this product category?
A1: Key electrical parameters include FET type, technology, drain to source voltage, continuous drain current, Rds On, gate threshold voltage, gate charge, power dissipation, and operating temperature. Mechanical compatibility (package/case, mounting type) is also fundamental.

Q2: Are the IXTH60N20L2 or IXTQ60N20L2 suitable direct substitutes for the APT20M45BVRG?
A2: Both substitute parts match the APT20M45BVRG in critical electrical parameters, compliance status, and product category. The IXTH60N20L2 has a compatible TO-247-3 package. The IXTQ60N20L2 uses a TO-3P package, which must be checked against original design constraints.

Q3: How does package type affect substitutability?
A3: Device package (TO-247-3 vs TO-3P) influences mechanical fit and soldering compatibility. Substitute components must match the PCB layout and mechanical envelope to ensure successful integration.

Q4: What compliance certifications are maintained among all substitutes?
A4: All devices are ROHS3 compliant and have REACH unaffected status, indicating suitability for markets or applications requiring environmental certifications.

Q5: Is there any difference in electrical performance to consider?
A5: All listed devices have similar electrical parameters relevant to substitution, with minor variations as shown in the parameter comparison table. Selection should be based on the electrical and mechanical requirements specific to the application.

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