APT20M20B2FLLG Equivalent & Substitute Parts Reference

Part Overview

The APT20M20B2FLLG is an N-Channel MOSFET with a Drain to Source Voltage (Vdss) rating of 200 V and a continuous drain current capability of 100 A (Tc), supplied in a T-MAX™ [B2] (TO-247-3 Variant) through-hole package. It is designed for high-current switching power applications, as featured in Microchip Technology's POWER MOS V® series. The product status is active with ROHS3 and REACH compliance. Identifying suitable alternative or substitute parts is essential in scenarios where supply constraints, stocking preferences, or multi-vendor sourcing are mandated in procurement processes.

Substiute Parts

APT20M20B2FLLG

Microchip TechnologyIn Stock: 989APT20M20B2FLLG Datasheet

Current PartRFQ

IXFH120N20P

IXYSIn Stock: 2220IXFH120N20P Datasheet

SimilarRFQ

IXTH130N20T

IXYSIn Stock: 32587IXTH130N20T Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts are identified strictly based on the following key parameters, as provided:

• Same FET type (N-Channel)
• Equivalent technology (MOSFET)
• Drain to Source Voltage (Vdss) of 200 V
• Through-hole mounting type
• TO-247-3 or compatible package
• Comparable or higher continuous drain current (Id)
• Rds On (Maximum) equal to or lower
• Gate-source threshold voltage (Vgs(th)) compatibility
• Gate charge (Qg) and input capacitance (Ciss) within reasonable matching, based on provided values only
• Compliance with ROHS3 and REACH requirements
• Active product status

Substitution is strictly limited to parts matching these explicit parameters.

Parameter Comparison

Engineering Selection Recommendations

The main part, APT20M20B2FLLG, and its substitutes IXFH120N20P and IXTH130N20T are all listed as active and are ROHS3 compliant with unaffected REACH status. All devices are through-hole MOSFETs in TO-247-3 packages, with equivalent Drain to Source Voltage ratings and N-Channel type. Selection among these parts may be dictated solely by product status, environmental compliance, and mechanical compatibility as provided.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for substituting APT20M20B2FLLG with an alternative MOSFET?
A1: The critical parameters are FET type, technology, Drain to Source Voltage (Vdss), continuous drain current (Id), Rds On (Max), gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), mounting type, package, RoHS, REACH compliance, and product status.

Q2: Are IXFH120N20P and IXTH130N20T directly compatible in terms of footprint and mounting?
A2: Both IXFH120N20P and IXTH130N20T utilize the TO-247-3 through-hole package, which matches the mounting type and mechanical footprint as specified for APT20M20B2FLLG.

Q3: What compliance standards are observed by all listed substitute parts?
A3: All substitutes, as well as the main part, are ROHS3 compliant and REACH unaffected.

Q4: Can higher continuous drain current or lower Rds On be considered compatible?
A4: Yes, substitute parts with greater or equal continuous drain current and lower Rds On remain within the defined compatibility based solely on the provided parameters.

Q5: Are there differences in gate charge or input capacitance that could affect operation?
A5: Numerical differences are present; only values specifically provided are considered for equivalency here, without introducing unlisted dependencies. All substitutes are included strictly according to the allowed input parameters.