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Equivalent & Substitute Parts for APT20M18B2VRG
Part Overview
The APT20M18B2VRG from Microchip Technology is an N-Channel Power MOSFET in the category of Transistors, FETs, and MOSFETs. It features a continuous drain current of 100A (Tc), a drain to source voltage (Vdss) of 200V, and is supplied in a TO-247-3 T-MAX™ [B2] package. The device is part of the POWER MOS V® series and is RoHS3 compliant with an inventory status of “Active.”
Identifying equivalent and substitute models is necessary due to supply chain requirements, potential inventory constraints, or cross-manufacturer sourcing needs.
Substiute Parts
Key Parameters
| Parameter | APT20M18B2VRG |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) | 18mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Gate Charge (Qg) (Max) | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) | 9880 pF @ 25 V |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant |
| RoHS Status | ROHS3 Compliant |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitute parts are identified by matching key electrical and mechanical parameters, including FET type, technology, voltage and current ratings, on-state resistance (Rds On), threshold voltage, gate charge, input capacitance, mounting type, package details, and RoHS compliance. Only parts that meet or exceed these parameters and are active are included as substitutes.
Parameter Comparison
| Parameter | APT20M18B2VRG Microchip Technology |
IXFH120N20P IXYS |
IXTH130N20T IXYS |
|---|---|---|---|
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V | 200V | 200V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | 120A (Tc) | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 50A, 10V | 22mOhm @ 500mA, 10V | 16mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA | 5V @ 4mA | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V | 152 nC @ 10 V | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9880 pF @ 25 V | 6000 pF @ 25 V | 8800 pF @ 25 V |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | T-MAX™ [B2] | TO-247AD (IXFH) | TO-247 (IXTH) |
| Package / Case | TO-247-3 Variant | TO-247-3 | TO-247-3 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
The APT20M18B2VRG, IXFH120N20P, and IXTH130N20T are all active, RoHS3 compliant, through-hole N-Channel MOSFETs with similar drain to source voltage and compatible continuous drain current ratings. Each provides a TO-247-3 package variant for mechanical compatibility. All parts have an unlimited moisture sensitivity level and are REACH unaffected.
Frequently Asked Questions (FAQ)
Q1: What are the critical parameters for substituting the APT20M18B2VRG?
A1: The key parameters are FET type, technology, drain to source voltage, continuous drain current, Rds On, threshold voltage, gate charge, input capacitance, mounting type, and package details.
Q2: Are the substitute parts mechanically compatible?
A2: All substitute parts feature through-hole mounting and are supplied in TO-247-3 package variants.
Q3: Do the listed substitutes maintain regulatory and environmental compliance?
A3: All substitute MOSFETs are ROHS3 compliant and have a moisture sensitivity level of 1 (unlimited).
Q4: Is there any difference in product status for these parts?
A4: All compared parts are currently listed as active.
Q5: How does package variance affect substitution?
A5: All listed MOSFETs use a TO-247-3 case or variant; device-specific package names (T-MAX™ [B2], TO-247AD, TO-247) denote manufacturer variations on the base TO-247-3 standard.
Q6: Are there differences in maximum gate charge or input capacitance among potential substitutes?
A6: The substitutes each specify different gate charge and input capacitance values within a range relevant for this category, as specified in the parameter comparison table.
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