APT18F60B Equivalent & Substitute Parts

Part Overview

The APT18F60B is an N-Channel MOSFET manufactured by Microchip Technology, rated for 600V drain-to-source voltage with 19A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and is currently in active product status with 861 pieces in stock. This component is designed for high-voltage switching applications requiring robust thermal performance up to 335W at the case temperature.

Equivalent and substitute parts are identified based on matching or exceeding the critical electrical and mechanical parameters of the APT18F60B, including voltage rating, current capacity, package type, and thermal characteristics. Substitutes enable design flexibility, supply chain alternatives, and performance optimization within the same application class.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	19	A
On-State Resistance (Rds On) @ 9A, 10V	390	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	5	V
Gate Charge (Qg) @ 10V	90	nC
Power Dissipation (Max)	335	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the APT18F60B is determined by the following critical parameters:

Voltage Rating (Vdss): All substitute parts must maintain a minimum 600V drain-to-source voltage rating to ensure safe operation in the intended application. Parts rated above 600V (such as the IXFR32N80Q3 at 800V) are acceptable as they provide additional voltage margin.

Current Rating (Id): Substitute parts must support a continuous drain current equal to or greater than 19A at 25°C to handle the application load without thermal derating.

Package and Mounting: All substitutes must use TO-247-3 package format with through-hole mounting to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink interfaces.

Operating Temperature Range: All substitutes must support the full -55°C to 150°C operating temperature range to maintain performance across the application's thermal envelope.

Compliance and Status: All substitute parts must be RoHS3 compliant and either active or available in stock to ensure long-term supply viability and regulatory conformance.

Parameter Comparison

Parameter	APT18F60B (Main)	AOK20N60L	IRFPC60LCPBF	IXFH22N60P	IXFR32N80Q3
Manufacturer	Microchip Technology	Alpha & Omega Semiconductor	Vishay Siliconix	IXYS	IXYS
Vdss (V)	600	600	600	600	800
Id @ 25°C (A)	19	20	16	22	24
Rds On @ 10V (mOhm)	390 @ 9A	370 @ 10A	400 @ 9.6A	350 @ 11A	300 @ 16A
Vgs(th) (V)	5 @ 1mA	4.5 @ 250µA	4 @ 250µA	5.5 @ 4mA	6.5 @ 4mA
Gate Charge Qg @ 10V (nC)	90	74	120	58	140
Power Dissipation (W)	335	417	280	400	500
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Active	Obsolete	Active	Active	Active
RoHS3 Compliant	Yes	Yes	Yes	Yes	Yes
Inventory Status	861 Pcs	8050 Pcs	1432 Pcs	6250 Pcs	968 Pcs

Engineering Selection Recommendations

Primary Substitute: IXFH22N60P

The IXFH22N60P from IXYS is the most suitable direct substitute for the APT18F60B. It exceeds the current rating (22A vs. 19A), maintains the 600V voltage specification, and offers superior on-state resistance (350mOhm vs. 390mOhm), resulting in lower conduction losses. The device is active in production status with 6250 pieces in stock, ensuring supply continuity. It is RoHS3 compliant and operates across the full -55°C to 150°C temperature range. The lower gate charge (58nC vs. 90nC) provides faster switching characteristics, benefiting high-frequency applications.

Secondary Substitute: AOK20N60L

The AOK20N60L from Alpha & Omega Semiconductor provides a 20A current rating with 370mOhm on-state resistance, both superior to the APT18F60B. However, this part is marked as obsolete, limiting its suitability for new designs or long-term production. It is RoHS3 compliant with substantial inventory (8050 pieces), making it viable for near-term applications where supply is not a concern. The lower gate charge (74nC) supports efficient switching operation.

Alternative Substitute: IXFR32N80Q3

The IXFR32N80Q3 from IXYS is suitable for applications requiring higher voltage margin. With an 800V rating and 24A current capacity, it exceeds the APT18F60B specifications and provides enhanced reliability in high-voltage transient environments. The superior on-state resistance (300mOhm) and higher power dissipation rating (500W) support demanding thermal conditions. This device is active in production with 968 pieces in stock and is RoHS3 compliant. The higher gate charge (140nC) and input capacitance (6940pF) may increase switching losses in high-frequency circuits.

Not Recommended: IRFPC60LCPBF

The IRFPC60LCPBF from Vishay Siliconix has a reduced current rating (16A vs. 19A), making it unsuitable as a direct substitute for applications requiring the full 19A capacity. While it maintains the 600V voltage rating and is RoHS3 compliant with active status, the lower current capability and higher gate charge (120nC) limit its applicability.

Frequently Asked Questions (FAQ)

Q: Can the IXFH22N60P directly replace the APT18F60B without PCB modifications?

A: Yes. The IXFH22N60P uses the same TO-247-3 package and through-hole mounting configuration as the APT18F60B. Pin assignments are identical, and the device operates across the same -55°C to 150°C temperature range. No PCB layout changes are required for mechanical or electrical compatibility.

Q: What is the significance of the lower gate charge in the IXFH22N60P?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IXFH22N60P's 58nC gate charge is lower than the APT18F60B's 90nC, resulting in faster switching transitions and reduced driver power consumption. This is advantageous in high-frequency switching applications (above 50 kHz) where gate drive losses become significant.

Q: Why is the AOK20N60L listed as obsolete?

A: Obsolete status indicates that the manufacturer has discontinued active production and support for this part. While inventory is currently available (8050 pieces), future availability cannot be guaranteed. For new designs or long-term production commitments, active-status alternatives such as the IXFH22N60P or IXFR32N80Q3 are recommended.

Q: Can the IXFR32N80Q3 be used in a 600V application?

A: Yes. The IXFR32N80Q3 is rated for 800V, which exceeds the 600V requirement of the APT18F60B application. The higher voltage rating provides additional safety margin against transient overvoltages and voltage spikes. However, the higher input capacitance (6940pF vs. 3550pF) may require gate driver adjustments in high-frequency circuits to maintain switching speed.

Q: What does RoHS3 compliance mean for component substitution?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance ensures that the component meets European environmental and safety standards by restricting the use of hazardous materials such as lead, cadmium, and mercury. All listed substitute parts are RoHS3 compliant, ensuring regulatory conformance and compatibility with modern manufacturing and end-use requirements.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: On-state resistance determines conduction losses when the MOSFET is in the on-state. Lower Rds On values reduce power dissipation and heat generation. The IXFH22N60P (350mOhm) and IXFR32N80Q3 (300mOhm) both offer lower Rds On than the APT18F60B (390mOhm), resulting in improved efficiency and reduced thermal stress on the heatsink.

Q: Is the TO-247-3 package suitable for high-current applications?

A: Yes. The TO-247-3 package is specifically designed for high-current, high-power applications. It features a large metal tab for direct heatsink mounting, enabling efficient thermal dissipation. All listed substitute parts use this package format, ensuring adequate thermal performance for continuous currents in the 16A to 24A range.

Q: What is the impact of higher gate charge on circuit design?

A: Higher gate charge requires more energy from the gate driver to switch the MOSFET. The IRFPC60LCPBF (120nC) and IXFR32N80Q3 (140nC) have higher gate charges than the APT18F60B (90nC), potentially requiring a more robust gate driver circuit. In low-frequency applications (below 10 kHz), this impact is negligible; in high-frequency applications, it may increase driver power consumption and heat generation.

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