Equivalent & Substitute Parts for APT14M100B

Part Overview

APT14M100B is a N-Channel MOSFET manufactured by Microchip Technology, classified under Transistors, FETs, MOSFETs, with a TO-247 [B] package and through-hole mounting. It features a Drain to Source Voltage of 1000 V, a continuous drain current of 14A (Tc), and a power dissipation rating of 500W (Tc). The device is currently active and available in inventory. Engineers seek alternative models for reasons including supply chain continuity, design compatibility, and comparative evaluation within the same product category.

Substiute Parts

APT14M100B
Microchip TechnologyIn Stock: 1224APT14M100B Datasheet
APT14M100B
Current Part
IXFH12N90P
IXYSIn Stock: 1923IXFH12N90P Datasheet
IXFH12N90P
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IXFH16N120P
IXYSIn Stock: 1529IXFH16N120P Datasheet
IXFH16N120P
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IXFR15N100Q3
IXYSIn Stock: 950IXFR15N100Q3 Datasheet
IXFR15N100Q3
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Key Parameters

ParameterAPT14M100B Value
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 7A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3965 pF @ 25 V
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 [B]
Package / CaseTO-247-3
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
Product StatusActive

Substitute Part Grouping Explanation

Substitute parts for APT14M100B are grouped strictly by matching key electrical and mechanical parameters within the Transistors, FETs, MOSFETs category. Substitution is determined by:

  • FET Type (N-Channel)
  • Technology (MOSFET)
  • Drain to Source Voltage (Vdss)
  • Current - Continuous Drain (Id) at 25°C
  • Rds On (Max) and Drive Voltage parameters
  • Gate threshold and charge parameters
  • Power Dissipation (Max)
  • Package type and mounting style
  • Product Status and regulatory compliance

Only parts matching these parameters precisely or within the defined envelope are listed as alternatives.

Parameter Comparison

Manufacturer Part Number FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case RoHS Status Moisture Sensitivity Level (MSL) REACH Status Product Status
APT14M100B N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 900mOhm @ 7A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3965 pF @ 25 V 500W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-247 [B] TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active
IXFH12N90P N-Channel MOSFET (Metal Oxide) 900 V 12A (Tc) 10V 900mOhm @ 6A, 10V 6.5V @ 1mA 56 nC @ 10 V ±30V 3080 pF @ 25 V 380W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-247AD (IXFH) TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active
IXFH16N120P N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V 660W (Tc) -55°C ~ 150°C (TJ) Through Hole TO-247AD (IXFH) TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active
IXFR15N100Q3 N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.2Ohm @ 7.5A, 10V 6.5V @ 4mA 64 nC @ 10 V ±30V 3250 pF @ 25 V 400W (Tc) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active

Engineering Selection Recommendations

All listed substitutes, including IXFH12N90P, IXFH16N120P, and IXFR15N100Q3, have active product status, ROHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH unaffected status. Inventory availability for each substitute is confirmed. Substitutes are suitable for selection when product status and regulatory certifications meet the requirements for the application.

Frequently Asked Questions (FAQ)

Q1: What parameters are most critical when selecting substitutes for APT14M100B in MOSFET applications?
A1: Appropriate substitutes require matched device type (N-Channel MOSFET), comparable drain-source voltage (Vdss), continuous drain current (Id), Rds On characteristics, drive and gate threshold voltage, power dissipation, operating temperature range, and package compatibility.

Q2: Are the packages and mounting styles compatible between APT14M100B and its substitutes?
A2: All substitutes utilize through-hole mounting with TO-247-3 package variants. Dimensions may vary between TO-247 [B], TO-247AD (IXFH), and ISOPLUS247™, so mechanical compatibility should be checked against board layouts.

Q3: Do substitutes have matching compliance and certification status?
A3: All substitutes are ROHS3 compliant, have Moisture Sensitivity Level 1 (Unlimited), and are REACH unaffected, consistent with APT14M100B.

Q4: How does inventory status affect substitute selection?
A4: Inventory is available for all substitute parts listed. Engineering selection can be based on quantity requirements as well as matched specifications.

Q5: What electrical differences exist among the substitutes?
A5: Substitutes may exhibit variations in Vdss, Id, Rds On, gate charge, and capacitance values. All substitutes remain within the operational framework defined by the main part's parameters and device category.

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