APT14F100B Equivalent & Substitute Parts

Part Overview

The APT14F100B is an N-Channel power MOSFET manufactured by Microchip Technology, rated for 1000V drain-to-source voltage with 14A continuous drain current at 25°C. This device is housed in a TO-247 [B] through-hole package and is designed for high-voltage switching applications requiring robust thermal performance up to 500W. The part is Active status and RoHS3 compliant, making it suitable for modern industrial and power conversion applications. Equivalent and substitute parts are identified to provide design flexibility when the primary part is unavailable or when application requirements necessitate alternative electrical or thermal characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	14	A (Tc)
Rds On (Max) @ Id, Vgs	980 mOhm @ 7A, 10V	Ohm
Power Dissipation (Max)	500	W (Tc)
Gate Charge (Qg) (Max) @ Vgs	120	nC @ 10V
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	TO-247-3
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitute parts for the APT14F100B are selected based on compatibility within the following critical parameters: N-Channel MOSFET technology, through-hole mounting configuration, drain-to-source voltage rating, continuous drain current capability, gate charge characteristics, and operating temperature range. All substitute parts maintain the same gate voltage maximum (±30V) and operate across the identical temperature range (-55°C to 150°C). Substitution is valid when the alternative part meets or exceeds the voltage and current requirements of the application while maintaining compatible package footprints and thermal performance characteristics. The following parts satisfy these criteria:

IXFH12N90P: 900V, 12A, 380W, TO-247AD package IXFH16N120P: 1200V, 16A, 660W, TO-247AD package IXFR15N100Q3: 1000V, 10A, 400W, ISOPLUS247™ package STW11NK90Z: 900V, 9.2A, 200W, TO-247-3 package

Parameter Comparison

Parameter	APT14F100B	IXFH12N90P	IXFH16N120P	IXFR15N100Q3	STW11NK90Z
Manufacturer	Microchip Technology	IXYS	IXYS	IXYS	STMicroelectronics
Drain to Source Voltage (Vdss)	1000 V	900 V	1200 V	1000 V	900 V
Current - Continuous Drain (Id) @ 25°C	14 A (Tc)	12 A (Tc)	16 A (Tc)	10 A (Tc)	9.2 A (Tc)
Rds On (Max) @ Id, Vgs	980 mOhm @ 7A, 10V	900 mOhm @ 6A, 10V	950 mOhm @ 8A, 10V	1.2 Ohm @ 7.5A, 10V	980 mOhm @ 4.6A, 10V
Power Dissipation (Max)	500 W (Tc)	380 W (Tc)	660 W (Tc)	400 W (Tc)	200 W (Tc)
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 10V	56 nC @ 10V	120 nC @ 10V	64 nC @ 10V	115 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3965 pF @ 25V	3080 pF @ 25V	6900 pF @ 25V	3250 pF @ 25V	3000 pF @ 25V
Vgs(th) (Max) @ Id	5 V @ 1mA	6.5 V @ 1mA	6.5 V @ 1mA	6.5 V @ 4mA	4.5 V @ 100µA
Vgs (Max)	±30 V	±30 V	±30 V	±30 V	±30 V
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute parts maintain Active product status and full RoHS3 compliance, ensuring regulatory alignment with the APT14F100B. Selection among substitute parts depends on specific application voltage and current requirements:

IXFH16N120P is suitable for applications requiring higher voltage headroom (1200V) and increased current capacity (16A) with superior power dissipation (660W). This part accommodates designs with higher transient voltage spikes or increased thermal demands.

IXFH12N90P operates at reduced voltage (900V) and current (12A) with lower power dissipation (380W), appropriate for applications with lower voltage stress requirements and moderate thermal loads.

IXFR15N100Q3 maintains the 1000V voltage rating of the APT14F100B with reduced current capacity (10A) and power dissipation (400W). The ISOPLUS247™ package provides alternative mechanical mounting considerations while maintaining electrical compatibility within lower current applications.

STW11NK90Z operates at 900V with the lowest current rating (9.2A) and power dissipation (200W) among substitutes, suitable for low-power switching applications with reduced thermal requirements.

All substitute parts share identical gate voltage limits (±30V), operating temperature range (-55°C to 150°C), and through-hole mounting configuration. Compliance certifications (RoHS3, REACH Unaffected, MSL 1) are uniform across all parts.

Frequently Asked Questions (FAQ)

Q: Can IXFH12N90P directly replace APT14F100B in all applications?

A: IXFH12N90P operates at 900V versus the APT14F100B's 1000V rating and provides 12A continuous current versus 14A. Direct substitution is valid only in applications where the voltage stress does not exceed 900V and current demand does not exceed 12A. The 380W power dissipation is also lower than the 500W rating of the APT14F100B.

Q: What are the package compatibility considerations?

A: APT14F100B uses TO-247 [B] packaging. IXFH12N90P and IXFH16N120P use TO-247AD variants, and STW11NK90Z uses standard TO-247-3. All three package types share the same TO-247-3 footprint and pin configuration, enabling direct PCB mounting compatibility. IXFR15N100Q3 uses ISOPLUS247™ packaging, which maintains the same electrical pin configuration but may have different mechanical dimensions; PCB layout verification is required.

Q: Is IXFH16N120P a direct upgrade for APT14F100B?

A: IXFH16N120P exceeds APT14F100B specifications in voltage (1200V versus 1000V), current (16A versus 14A), and power dissipation (660W versus 500W). This part is electrically compatible and suitable for applications requiring higher performance margins. Gate charge remains identical at 120 nC, ensuring compatible gate drive circuitry.

Q: Which substitute part has the lowest gate charge?

A: IXFH12N90P has the lowest gate charge at 56 nC @ 10V, compared to 120 nC for APT14F100B. Lower gate charge reduces switching losses and gate drive power requirements, beneficial for high-frequency switching applications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts (IXFH12N90P, IXFH16N120P, IXFR15N100Q3, and STW11NK90Z) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity and REACH Unaffected status, matching the compliance profile of APT14F100B.

Q: What is the difference between TO-247AD and TO-247-3 packages?

A: TO-247AD is an IXYS variant designation of the standard TO-247-3 package. Both maintain identical electrical pin configuration and footprint compatibility. The "AD" designation indicates IXYS manufacturing standards. Mechanical dimensions are equivalent for PCB mounting purposes.

Q: Can STW11NK90Z be used in high-current applications?

A: STW11NK90Z is rated for 9.2A continuous current and 200W power dissipation, the lowest among all listed substitutes. This part is suitable only for applications with current demands below 9.2A and thermal loads below 200W. Higher current applications require IXFH12N90P, IXFH16N120P, or IXFR15N100Q3.

Q: What is the significance of gate threshold voltage (Vgs(th)) differences?

A: APT14F100B has Vgs(th) of 5V @ 1mA, while most substitutes range from 4.5V to 6.5V. These variations affect gate drive circuit design and switching speed. Lower threshold voltages enable faster switching with lower gate drive voltage, while higher thresholds provide greater noise immunity. Gate drive circuits must accommodate the specific threshold voltage of the selected part.

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