APT12M80B Equivalent & Substitute MOSFET Parts Reference

Part Overview

The APT12M80B by Microchip Technology is an N-channel Power MOSFET within the Transistors, FETs, MOSFETs category. It features an 800 V drain-to-source voltage and a 13A continuous current capability, provided in a TO-247-3 through-hole package. With a maximum power dissipation of 335W and a gate charge of 80 nC, this device serves high-voltage, high-current switching applications. It is active and RoHS3 compliant. Sourcing alternative models with equivalent electrical and mechanical parameters supports design flexibility, mitigates supply risks, and ensures procurement continuity.

Key Parameters

Parameter	APT12M80B
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	800mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2470 pF @ 25 V
Power Dissipation (Max)	335W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 [B]
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
MSL	1 (Unlimited)
REACH Status	REACH Unaffected
Product Status	Active

Substitute Part Grouping Explanation

Substitution is established strictly by matching the main application-relevant parameters for N-channel Power MOSFETs. Only parts that fulfill the following parameters and have fully specified values are grouped as substitutes: FET Type, Technology, Drain to Source Voltage (Vdss), Continuous Drain Current (Id @ 25°C), Rds On (Max), Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg), Maximum and Minimum Drive Voltage, Maximum Gate-Source Voltage (Vgs), Input Capacitance (Ciss), Power Dissipation (Max), Operating Temperature, Mounting Type, and Package. Only parts that match or exceed these parameters and share package compatibility are categorized for direct substitution.

Parameter Comparison

Parameter	APT12M80B	IXFH14N80P
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V	800 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	800mOhm @ 6A, 10V	720mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 1mA	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V	61 nC @ 10 V
Vgs (Max)	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	2470 pF @ 25 V	3900 pF @ 25 V
Power Dissipation (Max)	335W (Tc)	400W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Supplier Device Package	TO-247 [B]	TO-247AD (IXFH)
Package / Case	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected
Product Status	Active	Active

Engineering Selection Recommendations

Both APT12M80B and IXFH14N80P are listed as active products, are RoHS3 compliant, rated MSL 1 (Unlimited), and marked REACH Unaffected. All compliance and regulatory parameters match as provided. Only these product compliance statuses are referenced as criteria for selection.

Frequently Asked Questions (FAQ)

Q: Which parameters are critical for determining MOSFET substitution compatibility between APT12M80B and IXFH14N80P in this reference?
A: Substitution is determined by matching FET Type, Technology, Drain to Source Voltage (Vdss), Continuous Drain Current (Id) at 25°C, Rds On (Max), Gate Threshold Voltage (Vgs(th)), Gate Charge (Qg), Maximum Gate-Source Voltage (Vgs), Input Capacitance (Ciss), Power Dissipation (Max), Operating Temperature, Mounting Type, and Package.

Q: Are both APT12M80B and IXFH14N80P compliant with RoHS and REACH requirements?
A: Both MOSFETs are listed as ROHS3 Compliant and REACH Unaffected.

Q: Do the package and mounting types match between APT12M80B and IXFH14N80P?
A: Both MOSFETs use the TO-247-3 package and are designed for through-hole mounting.

Q: Is it necessary to consider the Moisture Sensitivity Level (MSL) for these substitute MOSFETs?
A: Both APT12M80B and IXFH14N80P have an MSL rating of 1 (Unlimited), indicating no special storage or handling requirements.

Q: Is substitution between APT12M80B and IXFH14N80P based on inferred parameters or only provided data?
A: Substitution is strictly based on the explicitly provided electrical and mechanical parameters. No inference or extrapolation has been used.

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