Equivalent & Substitute Parts Reference for APT11F80B

Part Overview

The Microchip Technology APT11F80B is an N-Channel MOSFET in the POWER MOS 8™ series, categorized under Transistors, FETs, MOSFETs. It features an 800 V drain-to-source voltage, 12A continuous drain current, and 337W power dissipation, housed in a TO-247 [B] through-hole package. The product is currently active and RoHS3 compliant.

Selecting alternative or equivalent models is necessary when considering inventory availability, manufacturing continuity, or meeting compliance requirements. Substitute parts must match critical electrical and mechanical specifications to ensure compatibility within circuit designs.

Substiute Parts

APT11F80B
Microchip TechnologyIn Stock: 687APT11F80B Datasheet
APT11F80B
Current Part
IXFH10N80P
IXYSIn Stock: 1105IXFH10N80P Datasheet
IXFH10N80P
Similar
STW9N80K5
STMicroelectronicsIn Stock: 1202STW9N80K5 Datasheet
STW9N80K5
Similar

Key Parameters

Parameter APT11F80B IXFH10N80P STW9N80K5
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 10A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 6A, 10V 1.1Ohm @ 5A, 10V 900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5.5V @ 2.5mA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 40 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2471 pF @ 25 V 2050 pF @ 25 V 340 pF @ 100 V
Power Dissipation (Max) 337W (Tc) 300W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99

Substitute Part Grouping Explanation

Substitute grouping is based strictly on these allowed electrical and mechanical parameters:

  • FET type
  • Technology
  • Drain to source voltage (Vdss)
  • Continuous drain current (Id @ 25°C)
  • Drive voltage (Max Rds On, Min Rds On)
  • Rds On (Max) @ Id, Vgs
  • Gate charge (Qg) (Max) @ Vgs
  • Vgs(th) (Max) @ Id
  • Vgs (Max)
  • Input capacitance (Ciss)
  • Power dissipation (Max)
  • Operating temperature range
  • Mounting type
  • Package / case
  • RoHS and REACH compliance
  • Moisture Sensitivity Level (MSL)
  • ECCN

Substitution is only allowed when these parameters are within suitable ranges for the product category, with all compliance and packaging requirements maintained.

Parameter Comparison

Parameter APT11F80B IXFH10N80P STW9N80K5
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Continuous Drain Current (Id) @ 25°C 12A (Tc) 10A (Tc) 7A (Tc)
Rds On (Max) @ Id, Vgs 900mOhm @ 6A, 10V 1.1Ohm @ 5A, 10V 900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5.5V @ 2.5mA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 40 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2471 pF @ 25 V 2050 pF @ 25 V 340 pF @ 100 V
Power Dissipation (Max) 337W (Tc) 300W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
RoHS ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

All parts (APT11F80B, IXFH10N80P, STW9N80K5) are active, RoHS3 compliant, REACH unaffected, and have unlimited moisture sensitivity (MSL 1). ECCN status is EAR99 for each part number. Packaging and through-hole mounting are standardized as TO-247-3 for cross-compatibility. Selection can be made using these certifications and compliance statuses without additional criteria.

Frequently Asked Questions (FAQ)

Q: What primary electrical specifications must match for MOSFET substitution?
A: Allowed parameters for substitution include drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), and maximum allowed gate-source voltage (Vgs).

Q: Are substitute MOSFETs required to have the same package type?
A: Yes. Substitution is based only on parts supplied in TO-247-3 packages with through-hole mounting as specified.

Q: Is RoHS and REACH compliance necessary for all substitute parts?
A: Yes. All listed substitutes are ROHS3 compliant and REACH unaffected, matching the main part's compliance status.

Q: Can substitute parts be used interchangeably based on product status?
A: Yes. All listed parts are classified as active, enabling direct substitution within supplied product parameters.

Q: Do substitute MOSFETs differ in performance characteristics?
A: Differences in continuous drain current (Id), Rds On, gate charge, and power dissipation are provided for direct engineering comparison. Selection is strictly based on matching core functional parameters and package requirements.

Request Quote (Ships tomorrow)