Equivalent & Substitute Parts for APT10M25BVRG

Part Overview

The APT10M25BVRG from Microchip Technology is an active, ROHS3 compliant N-channel MOSFET in the Transistors, FETs, MOSFETs category, designed for high-power switching with a drain-source voltage rating of 100 V and a continuous drain current of 75A (Tc). This device is encapsulated in a TO-247 [B] package for through-hole mounting. It is suitable for industrial power applications requiring robust performance and compliance with international standards. Identifying alternative models is necessary to ensure continuous supply, logistics flexibility, and design compatibility in case of procurement constraints or multi-source requirements.

Substiute Parts

APT10M25BVRG

Microchip TechnologyIn Stock: 1021APT10M25BVRG Datasheet

Current PartRFQ

HUF75652G3

onsemiIn Stock: 2081HUF75652G3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution is based exclusively on matching the following key parameters: FET type, technology, drain-source voltage (Vdss), continuous drain current (Id), on-resistance (Rds On), gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), mounting type, and package. All listed substitute models must meet or exceed the electrical and mechanical parameters defined for the main part number, and maintain equivalent compliance status for ROHS3 and REACH. The substitute part HUF75652G3 falls within these defined parameters, ensuring compatibility for direct replacement.

Parameter Comparison

Engineering Selection Recommendations

Both APT10M25BVRG and HUF75652G3 are active, ROHS3 compliant, and REACH unaffected. Selection between these devices can be made based on current inventory, supply chain requirements, and strict adherence to compliance status. Only the information explicitly provided should be considered when selecting a substitute.

Frequently Asked Questions (FAQ)

Q1: What criteria are used to select substitute MOSFETs for APT10M25BVRG?
A1: Substitutes are selected based only on matching electrical parameters such as drain-source voltage, continuous drain current, on-resistance, gate threshold voltage, gate charge, input capacitance, FET type, technology, mounting style, device package, and compliance certifications.

Q2: Are the package types and mounting methods identical for APT10M25BVRG and HUF75652G3?
A2: Both parts use the TO-247-3 package and are suitable for through-hole mounting.

Q3: Is compliance with environmental and regulatory standards ensured for the substitute part?
A3: Both APT10M25BVRG and HUF75652G3 are ROHS3 compliant and REACH unaffected, meeting required compliance parameters.

Q4: Can HUF75652G3 be used in place of APT10M25BVRG without mechanical modification?
A4: Both devices share the same TO-247-3 package and through-hole mounting type, supporting direct mechanical interchangeability based on the provided package parameters.

Q5: Are there differences in electrical parameters that need to be considered for substitution?
A5: Only the parameters listed in the comparison table should be considered. All comparison is based on the explicit values provided in the input.