APT10090BLLG Equivalent & Substitute Parts

Part Overview

The APT10090BLLG is an N-Channel 1000V 12A MOSFET manufactured by Microchip Technology in the POWER MOS 7® series. This through-hole TO-247 [B] package device is designed for high-voltage switching applications requiring 1000V drain-to-source voltage capability with 12A continuous drain current at 25°C. The part is Active status and RoHS3 compliant. Equivalent and substitute parts are identified for applications where alternative manufacturers' devices meet the electrical and mechanical specifications, or where inventory availability requires component alternatives.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Current - Continuous Drain (Id) @ 25°C	12	A
Rds On (Max) @ Id, Vgs	950 mOhm @ 6A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	71	nC @ 10V
Power Dissipation (Max)	298	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Vgs (Max)	±30	V

Substitute Part Grouping Explanation

Substitute parts for the APT10090BLLG are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): Equal to or greater than 1000V
Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 12A
Mounting Type: Through Hole
Package / Case: TO-247-3 compatible
Operating Temperature Range: -55°C to 150°C (TJ)
Gate Drive Voltage: 10V
Vgs (Max): ±30V

Substitution Logic: Parts are grouped as equivalent or substitute based on whether they meet or exceed the voltage and current ratings of the main part while maintaining compatible package and thermal characteristics. Devices with lower voltage ratings (900V) are classified as substitutes for applications where the full 1000V rating is not required. Devices with higher voltage ratings (1200V) or higher current ratings (16A) are suitable for applications requiring enhanced performance margins.

Parameter Comparison

Parameter	APT10090BLLG (Main)	IXFH12N90P	IXFH16N120P	IXFR15N100Q3
Manufacturer	Microchip Technology	IXYS	IXYS	IXYS
Drain to Source Voltage (Vdss)	1000 V	900 V	1200 V	1000 V
Current - Continuous Drain (Id) @ 25°C	12 A	12 A	16 A	10 A
Rds On (Max) @ Id, Vgs	950 mOhm @ 6A, 10V	900 mOhm @ 6A, 10V	950 mOhm @ 8A, 10V	1.2 Ohm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10V	56 nC @ 10V	120 nC @ 10V	64 nC @ 10V
Power Dissipation (Max)	298 W	380 W	660 W	400 W
Operating Temperature Range	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C	-55 to 150 °C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Vgs (Max)	±30 V	±30 V	±30 V	±30 V
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

IXFH12N90P (IXYS): This substitute is suitable for applications where the drain-to-source voltage requirement is 900V or lower. The device maintains the same 12A continuous drain current rating and offers improved on-resistance (900 mOhm vs. 950 mOhm) at the same gate drive voltage. Lower gate charge (56 nC vs. 71 nC) results in faster switching characteristics. All devices are Active status, RoHS3 compliant, and share identical operating temperature ranges and gate voltage specifications. This substitute is appropriate for cost optimization in lower-voltage applications.

IXFH16N120P (IXYS): This substitute provides enhanced performance with 1200V drain-to-source voltage and 16A continuous drain current capability. The higher voltage rating and current capacity make this device suitable for applications requiring performance margins beyond the APT10090BLLG specifications. Increased power dissipation capability (660W vs. 298W) supports higher thermal loads. Higher gate charge (120 nC vs. 71 nC) results in slower switching compared to the main part. All compliance and temperature specifications remain equivalent. This substitute is appropriate for applications requiring higher voltage or current headroom.

IXFR15N100Q3 (IXYS): This substitute matches the 1000V drain-to-source voltage rating of the main part but provides only 10A continuous drain current, making it suitable for applications with lower current requirements. The device features a different package variant (ISOPLUS247™) while maintaining TO-247-3 case compatibility. Higher on-resistance (1.2 Ohm vs. 950 mOhm) and lower gate charge (64 nC vs. 71 nC) characterize this device. All compliance and temperature specifications remain equivalent. This substitute is appropriate for lower-current applications where the ISOPLUS247™ package is acceptable.

Frequently Asked Questions (FAQ)

Q: Can IXFH12N90P replace APT10090BLLG in all applications?

A: IXFH12N90P is suitable for applications where the maximum drain-to-source voltage does not exceed 900V. If your circuit operates at voltages above 900V, this substitute is not appropriate. Both devices share identical 12A current ratings, operating temperature ranges, and gate voltage specifications.

Q: What is the primary difference between IXFH16N120P and the main part?

A: IXFH16N120P provides higher voltage (1200V vs. 1000V) and higher current (16A vs. 12A) ratings with significantly greater power dissipation capability (660W vs. 298W). Gate charge is higher (120 nC vs. 71 nC), resulting in slower switching. This device is suitable for applications requiring enhanced performance margins.

Q: Is IXFR15N100Q3 compatible with the same PCB layout as APT10090BLLG?

A: IXFR15N100Q3 uses the ISOPLUS247™ package variant while maintaining TO-247-3 case compatibility. Physical pin configuration and mounting hole spacing are compatible with standard TO-247 layouts. However, the lower current rating (10A vs. 12A) must be verified against circuit requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. APT10090BLLG and all listed substitute parts (IXFH12N90P, IXFH16N120P, IXFR15N100Q3) are RoHS3 compliant with Moisture Sensitivity Level 1 (Unlimited).

Q: What is the impact of different on-resistance values on circuit performance?

A: On-resistance (Rds On) directly affects power dissipation and switching losses. IXFH12N90P offers lower on-resistance (900 mOhm vs. 950 mOhm), reducing conduction losses. IXFR15N100Q3 has higher on-resistance (1.2 Ohm), increasing conduction losses. Selection depends on thermal budget and efficiency requirements of the specific application.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Gate charge differences affect switching speed. APT10090BLLG has 71 nC gate charge. IXFH12N90P (56 nC) switches faster, while IXFH16N120P (120 nC) switches slower. IXFR15N100Q3 (64 nC) is comparable. Circuit design must account for these differences in gate drive timing and switching frequency performance.

Q: What are the inventory considerations for these parts?

A: APT10090BLLG has 2513 pieces in stock. IXFH12N90P has 1824 pieces, IXFH16N120P has 1423 pieces, and IXFR15N100Q3 has 878 pieces available. Inventory levels should be considered in component selection for production planning.

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