Equivalent & Substitute Parts for APT10045B2FLLG

Part Overview

The APT10045B2FLLG from Microchip Technology is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) under the POWER MOS 7® series. It is rated for high voltage (1000 V) and moderate continuous drain current (23A at Tc). The device features a T-MAX™ [B2] package suitable for through hole mounting and aligns with ROHS3, REACH, and ECCN compliance requirements. The product status is Active, indicating ongoing supply and support.

Identifying suitable alternatives is essential in cases of supply constraints, stocking preferences, or system compatibility requirements. Equivalent or substitute parts must match critical electrical, mechanical, and regulatory parameters to ensure interchangeable system performance and compliance.

Substiute Parts

APT10045B2FLLG

Microchip TechnologyIn Stock: 1060APT10045B2FLLG Datasheet

Current PartRFQ

IXFR24N100Q3

IXYSIn Stock: 1000IXFR24N100Q3 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Selection of substitute MOSFETs for the APT10045B2FLLG is based strictly on the equivalence of the following key parameters: FET type, MOSFET technology, drain-to-source voltage rating (Vdss), continuous drain current (Id) rating, on-resistance (Rds(on)), gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), through-hole mounting, comparable supplier device package and case, as well as matching regulatory compliance status including RoHS, REACH, and ECCN classifications.

Parameter Comparison

Engineering Selection Recommendations

Selection can be made based on product status, compliance certifications, and regulatory declarations. Both APT10045B2FLLG and IXFR24N100Q3 are Active and listed as ROHS3 Compliant, REACH Unaffected, and have ECCN code EAR99. Matching compliance and product status allows these models to be considered within substitution scenarios for systems requiring conformance to these regulatory and inventory criteria.

Frequently Asked Questions (FAQ)

Q1: What are the primary parameters to verify when substituting a MOSFET in this product category?
A1: Drain-to-source voltage (Vdss), continuous drain current (Id), Rds(on), gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), mounting type, device package, and compliance certifications (RoHS, REACH, ECCN).

Q2: Is the package form factor critical when choosing a substitute?
A2: Yes. Matching the package (e.g., TO-247-3 Variant or TO-247-3) and mounting type (through hole) ensures mechanical and thermal compatibility in the end application.

Q3: How should compliance and regulatory status be considered in substitution?
A3: The substitute must have equivalent RoHS, REACH, and ECCN status to maintain global compliance requirements.

Q4: Why is gate charge (Qg) and input capacitance (Ciss) included in substitution criteria?
A4: Gate charge and input capacitance influence switching characteristics, driver requirements, and performance in the application. Substitutes must be assessed for these matching parameters.

Q5: Can substitute MOSFETs be selected if only some electrical ratings match?
A5: Only if all critical provided parameters align as per requirements for direct substitution in the application.