APT1003RKLLG Equivalent & Substitute Parts Reference

Part Overview

The APT1003RKLLG is an N-channel MOSFET manufactured by Microchip Technology, classified under the "Transistors, FETs, MOSFETs" category. It features a drain-to-source voltage of 1000 V, continuous drain current of 4A (Tc), and is supplied in a TO-220 [K] through-hole package. The product status is Obsolete. Due to its obsolescence, it is necessary to identify alternative models that meet or closely match its key electrical and mechanical parameters to ensure design continuity and repairability where APT1003RKLLG was originally specified.

Substiute Parts

APT1003RKLLG
Microchip TechnologyIn Stock: 1122APT1003RKLLG Datasheet
APT1003RKLLG
Current Part
APT1003RBLLG
Microchip TechnologyIn Stock: 1158APT1003RBLLG Datasheet
APT1003RBLLG
Parametric Equivalent
IXFP4N100P
IXYSIn Stock: 1007IXFP4N100P Datasheet
IXFP4N100P
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IXFP4N100Q
IXYSIn Stock: 1487IXFP4N100Q Datasheet
IXFP4N100Q
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STP5N105K5
STMicroelectronicsIn Stock: 4304STP5N105K5 Datasheet
STP5N105K5
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Key Parameters

ParameterAPT1003RKLLG Value
Manufacturer Part NumberAPT1003RKLLG
CategoryTransistors, FETs, MOSFETs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds694 pF @ 25 V
Power Dissipation (Max)139W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220 [K]
Product StatusObsolete
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99

Substitute Part Grouping Explanation

Alternative and equivalent MOSFETs are selected strictly based on the following parameters: MOSFET type (N-Channel), drain-to-source voltage rating, maximum continuous drain current, drive voltage for Rds On specifications, Rds On value, Vgs threshold (Vgs(th)), gate charge, maximum Vgs, input capacitance, power dissipation rating, operating temperature, mounting and package type. All listed substitutes are classified under "Transistors, FETs, MOSFETs" and support through-hole mounting for replacement compatibility.

Parameter Comparison

Parameter APT1003RKLLG APT1003RBLLG IXFP4N100P IXFP4N100Q STP5N105K5
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V 1050 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc) 4A (Tc) 4A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V 3Ohm @ 2A, 10V 3.3Ohm @ 2A, 10V 3Ohm @ 2A, 10V 3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA 5V @ 250µA 5V @ 1.5mA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 34 nC @ 10 V 26 nC @ 10 V 39 nC @ 10 V 12.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 694 pF @ 25 V 694 pF @ 25 V 1456 pF @ 25 V 1050 pF @ 25 V 210 pF @ 100 V
Power Dissipation (Max) 139W (Tc) 139W (Tc) 150W (Tc) 150W (Tc) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-247-3 TO-220-3 TO-220-3 TO-220-3
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99 EAR99 EAR99

Engineering Selection Recommendations

Since APT1003RKLLG is marked Obsolete, replacement should prioritize current production status and compliance data. APT1003RBLLG, IXFP4N100P, and STP5N105K5 all have Active status and meet RoHS or REACH unaffected status and MSL 1 (Unlimited) ratings as required. These substitute MOSFETs are suitable selections when maintenance of compliance and ongoing product availability is necessary.

Frequently Asked Questions (FAQ)

Q1: What are the most critical parameters for substituting APT1003RKLLG?
A1: Key parameters include FET type, drain-to-source voltage (Vdss), continuous drain current (Id), drive voltage, Rds On, Vgs(th), gate charge, maximum Vgs, input capacitance, power dissipation, operating temperature, mounting type, and package.

Q2: Is package type significant when replacing APT1003RKLLG?
A2: Yes, package and mounting type affect mechanical compatibility. Alternatives are generally offered in TO-220-3 or TO-247-3 through-hole packages.

Q3: Can I use a part with a higher voltage or current rating?
A3: Substitute selection here matches or slightly exceeds the main part ratings for critical parameters as strictly provided in the input.

Q4: How important is product compliance?
A4: Compliance (REACH, RoHS3) and MSL designation ensure substitute MOSFETs meet regulatory and handling requirements compatible with APT1003RKLLG.

Q5: Why does the product status matter in substation?
A5: Selection of Active status components ensures ongoing availability compared to the Obsolete status of APT1003RKLLG.

Q6: If the package differs but specifications match, is substitution possible?
A6: Mechanical fit must be verified, as only TO-220-3 and TO-247-3 packages are listed based on the input parameters. Substitute MOSFETs in these packages meet compatibility requirements.

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