Equivalent & Substitute Parts for APL602LG

Part Overview

The Microchip Technology APL602LG is an N-Channel MOSFET designed for high-power switching applications, featuring a drain-source voltage of 600 V and continuous drain current of 49A. This part is housed in a TO-264 package and is currently active with RoHS3 compliance and unlimited moisture sensitivity level. Engineering scenarios warranting substitute or equivalent parts typically arise due to inventory management, supply chain optimization, or cross-referencing for design flexibility, especially when multiple compatible options are available within the same product category and package type.

Substiute Parts

APL602LG
Microchip TechnologyIn Stock: 1081APL602LG Datasheet
APL602LG
Current Part
IPW60R099CPAFKSA1
Infineon TechnologiesIn Stock: 989IPW60R099CPAFKSA1 Datasheet
IPW60R099CPAFKSA1
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IXFB60N80P
IXYSIn Stock: 32719IXFB60N80P Datasheet
IXFB60N80P
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IXFK48N60Q3
IXYSIn Stock: 927IXFK48N60Q3 Datasheet
IXFK48N60Q3
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Key Parameters

Parameter APL602LG
Manufacturer Microchip Technology
Category Transistors, FETs, MOSFETs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 125mOhm @ 24.5A, 12V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V
Power Dissipation (Max) 730W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 [L]
Package / Case TO-264-3, TO-264AA
RoHS Status ROHS3 Compliant
MSL 1 (Unlimited)
REACH Status REACH Unaffected
Product Status Active

Substitute Part Grouping Explanation

Substitute parts for APL602LG are selected strictly on the basis of matching key electrical and mechanical parameters: FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), drive voltage, maximum Rds On, gate-source threshold voltage (Vgs(th)), maximum gate-source voltage (Vgs), input capacitance, maximum power dissipation, operating temperature range, mounting type, and package compatibility. All listed substitutes are N-Channel MOSFETs, with Vdss ratings of 600 V or higher, through-hole mounting, and TO-264 or compatible package formats, ensuring direct comparability within the transistors, FETs, MOSFETs category.

Parameter Comparison

Parameter APL602LG IPW60R099CPAFKSA1 IXFB60N80P IXFK48N60Q3
Manufacturer Microchip Technology Infineon Technologies IXYS IXYS
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 600 V
Current - Continuous Drain (Id) @ 25°C 49A (Tc) 31A (Tc) 60A (Tc) 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V 10V 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 24.5A, 12V 105mOhm @ 18A, 10V 140mOhm @ 30A, 10V 140mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA 3.5V @ 1.2mA 5V @ 8mA 6.5V @ 4mA
Vgs (Max) ±30V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 2800 pF @ 100 V 18000 pF @ 25 V 7020 pF @ 25 V
Power Dissipation (Max) 730W (Tc) 255W (Tc) 1250W (Tc) 1000W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-264-3, TO-264AA TO-247-3 TO-264-3, TO-264AA TO-264-3, TO-264AA
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active Active

Engineering Selection Recommendations

All listed substitute parts (IPW60R099CPAFKSA1, IXFB60N80P, IXFK48N60Q3) maintain active product status with ROHS3 compliance, an unlimited moisture sensitivity level (MSL 1), and unaffected REACH status. These certifications and statuses support direct interchangeability within inventory or design contexts for the transistors, FETs, MOSFETs category. Package compatibility should be verified by comparing mechanical outlines, with TO-264 and TO-264AA formats aligning across several substitute options.

Frequently Asked Questions (FAQ)

Q1: What parameters must match for a valid MOSFET substitution in this product category?
A1: Only the provided parameters are used: N-Channel type, technology, drain-source voltage, continuous drain current, drive voltage, maximum Rds On, gate-source threshold voltage, maximum gate-source voltage, input capacitance, power dissipation, operating temperature range, through-hole mounting, and compatible package/case.

Q2: How critical is package compatibility for direct substitution?
A2: Substitute parts with identical package/case types (TO-264-3, TO-264AA) align mechanically and electrically for seamless drop-in replacement. Compatibility requires matching the footprint and lead configuration.

Q3: Can substitute parts with higher voltage or current ratings be used in place of the APL602LG?
A3: Substitute parts such as IXFB60N80P offer higher voltage and current ratings, remaining within the allowed product category. Only parameters explicitly listed are considered for compatibility.

Q4: Are all substitutes compliant with RoHS and REACH?
A4: All substitute parts listed (IPW60R099CPAFKSA1, IXFB60N80P, IXFK48N60Q3) are ROHS3 compliant and REACH unaffected, qualifying them for environments requiring regulatory compliance.

Q5: Why is moisture sensitivity level (MSL) important in substitution?
A5: A moisture sensitivity level of 1 (unlimited) indicates parts are suitable for all standard reflow and handling procedures, removing restrictions during inventory or implementation.

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