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APL602B2G Equivalent & Substitute Parts Reference
Part Overview
The Microchip Technology APL602B2G is an N-channel MOSFET, specified for 600 V Drain to Source Voltage (Vdss), a continuous drain current of 49A at 25°C (Tc), and a maximum Rds On of 125mOhm at 24.5A, 12V. This device features a TO-247-3 variant (T-MAX™ [B2]) through-hole package, accommodates a maximum power dissipation of 730W (Tc), and an input capacitance of 9000 pF at 25V. The device is RoHS3 compliant, REACH unaffected, has an MSL of 1 (unlimited), and is in active product status.
It is necessary to identify alternative models when there are constraints in availability, allocation, or other supply chain factors. Alternate parts must be evaluated strictly on the basis of allowed electrical and mechanical parameters, category compliance, and package compatibility.
Substiute Parts
Key Parameters
| Parameter | APL602B2G Value |
|---|---|
| Manufacturer | Microchip Technology |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 24.5A, 12V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25V |
| Power Dissipation (Max) | 730W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitution of the APL602B2G is determined by aligning the following key parameters: FET type, technology, drain to source voltage (Vdss), continuous drain current (Id) at 25°C, maximum on-resistance (Rds On), drive voltage, maximum gate-source voltage (Vgs), input capacitance (Ciss), maximum power dissipation, operating temperature range, mounting type, package/case compatibility, RoHS compliance, moisture sensitivity level (MSL), and REACH status. Each substitute provided below matches the required category and mounting/package style and is listed strictly according to the allowed electrical and mechanical parameters.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Category | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APL602B2G | Microchip Technology | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | 4V @ 2.5mA | ±30V | 9000 pF @ 25V | 730W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active |
| IPW60R099C6FKSA1 | Infineon Technologies | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | ±20V | 2660 pF @ 100V | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Not For New Designs |
| IPW60R099CPAFKSA1 | Infineon Technologies | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | ±20V | 2800 pF @ 100V | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active |
| IPW60R099CPFKSA1 | Infineon Technologies | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 650 V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | ±20V | 2800 pF @ 100V | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Not For New Designs |
| IPW60R125C6FKSA1 | Infineon Technologies | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | ±20V | 2127 pF @ 100V | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Not For New Designs |
| IXFR64N60Q3 | IXYS | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 104mOhm @ 32A, 10V | 6.5V @ 4mA | ±30V | 9930 pF @ 25V | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active |
| SPW32N50C3FKSA1 | Infineon Technologies | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 560 V | 32A (Tc) | 10V | 110mOhm @ 20A, 10V | 3.9V @ 1.8mA | ±20V | 4200 pF @ 25V | 284W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active |
| SPW35N60CFDFKSA1 | Infineon Technologies | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 34.1A (Tc) | 10V | 118mOhm @ 21.6A, 10V | 5V @ 1.9mA | ±20V | 5060 pF @ 25V | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Not For New Designs |
| STW34NM60N | STMicroelectronics | Transistors, FETs, MOSFETs | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | ±25V | 2722 pF @ 100V | 250W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Active |
Engineering Selection Recommendations
Preferred substitute parts should be selected with consideration for active product status, ROHS3 compliance, and MSL 1 (unlimited) and REACH unaffected ratings. Where product status is "Not For New Designs," substitute selection should be aligned with products in "Active" status. All listed substitute parts meet ROHS3 and MSL 1 (unlimited) requirements and are REACH unaffected.
Frequently Asked Questions (FAQ)
Q: Which parameters must match when selecting a substitute for APL602B2G?
A: The substitution requires matching the FET type, technology, drain to source voltage (Vdss), continuous drain current (Id) at 25°C, maximum Rds On values, drive voltage, operating temperature, mounting type, package/case, RoHS status, MSL, and REACH status.
Q: Are the TO-247-3 and variant packages compatible?
A: Substitutes listed use TO-247-3 compatible through-hole packages. Package compatibility must be verified according to mechanical datasheets if strict variant fitting is required.
Q: Do all substitutes meet RoHS and REACH compliance?
A: All substitutes are specified as ROHS3 compliant and REACH unaffected, with MSL 1 (unlimited).
Q: Can substitutes with lower drain current or different Rds On be used?
A: Acceptability is determined strictly by the provided parameter alignment; only parts matching or exceeding the specified limits in critical parameters are included.
Q: Are there substitutes with active product status?
A: Substitute parts such as IPW60R099CPAFKSA1, IXFR64N60Q3, SPW32N50C3FKSA1, and STW34NM60N are specified as "Active."
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