APL602B2G Equivalent & Substitute Parts Reference

Part Overview

The Microchip Technology APL602B2G is an N-channel MOSFET, specified for 600 V Drain to Source Voltage (Vdss), a continuous drain current of 49A at 25°C (Tc), and a maximum Rds On of 125mOhm at 24.5A, 12V. This device features a TO-247-3 variant (T-MAX™ [B2]) through-hole package, accommodates a maximum power dissipation of 730W (Tc), and an input capacitance of 9000 pF at 25V. The device is RoHS3 compliant, REACH unaffected, has an MSL of 1 (unlimited), and is in active product status.

It is necessary to identify alternative models when there are constraints in availability, allocation, or other supply chain factors. Alternate parts must be evaluated strictly on the basis of allowed electrical and mechanical parameters, category compliance, and package compatibility.

Substiute Parts

APL602B2G
Microchip TechnologyIn Stock: 963APL602B2G Datasheet
APL602B2G
Current Part
IPW60R099C6FKSA1
Infineon TechnologiesIn Stock: 2501IPW60R099C6FKSA1 Datasheet
IPW60R099C6FKSA1
Similar
IPW60R099CPAFKSA1
Infineon TechnologiesIn Stock: 989IPW60R099CPAFKSA1 Datasheet
IPW60R099CPAFKSA1
Similar
IPW60R099CPFKSA1
Infineon TechnologiesIn Stock: 1051IPW60R099CPFKSA1 Datasheet
IPW60R099CPFKSA1
Similar
IPW60R125C6FKSA1
Infineon TechnologiesIn Stock: 3418IPW60R125C6FKSA1 Datasheet
IPW60R125C6FKSA1
Similar
IXFR64N60Q3
IXYSIn Stock: 730IXFR64N60Q3 Datasheet
IXFR64N60Q3
Similar
SPW32N50C3FKSA1
Infineon TechnologiesIn Stock: 91316SPW32N50C3FKSA1 Datasheet
SPW32N50C3FKSA1
Similar
SPW35N60CFDFKSA1
Infineon TechnologiesIn Stock: 1203SPW35N60CFDFKSA1 Datasheet
SPW35N60CFDFKSA1
Similar
STW34NM60N
STMicroelectronicsIn Stock: 4948STW34NM60N Datasheet
STW34NM60N
Similar

Key Parameters

ParameterAPL602B2G Value
ManufacturerMicrochip Technology
CategoryTransistors, FETs, MOSFETs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs125mOhm @ 24.5A, 12V
Vgs(th) (Max) @ Id4V @ 2.5mA
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds9000 pF @ 25V
Power Dissipation (Max)730W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageT-MAX™ [B2]
Package / CaseTO-247-3 Variant
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
Product StatusActive

Substitute Part Grouping Explanation

Substitution of the APL602B2G is determined by aligning the following key parameters: FET type, technology, drain to source voltage (Vdss), continuous drain current (Id) at 25°C, maximum on-resistance (Rds On), drive voltage, maximum gate-source voltage (Vgs), input capacitance (Ciss), maximum power dissipation, operating temperature range, mounting type, package/case compatibility, RoHS compliance, moisture sensitivity level (MSL), and REACH status. Each substitute provided below matches the required category and mounting/package style and is listed strictly according to the allowed electrical and mechanical parameters.

Parameter Comparison

Manufacturer Part Number Manufacturer Category FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Operating Temperature Mounting Type Supplier Device Package Package / Case RoHS Status Moisture Sensitivity Level (MSL) REACH Status Product Status
APL602B2G Microchip Technology Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) 12V 125mOhm @ 24.5A, 12V 4V @ 2.5mA ±30V 9000 pF @ 25V 730W (Tc) -55°C ~ 150°C (TJ) Through Hole T-MAX™ [B2] TO-247-3 Variant ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active
IPW60R099C6FKSA1 Infineon Technologies Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 18.1A, 10V 3.5V @ 1.21mA ±20V 2660 pF @ 100V 278W (Tc) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-1 TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Not For New Designs
IPW60R099CPAFKSA1 Infineon Technologies Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 105mOhm @ 18A, 10V 3.5V @ 1.2mA ±20V 2800 pF @ 100V 255W (Tc) -40°C ~ 150°C (TJ) Through Hole PG-TO247-3 TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active
IPW60R099CPFKSA1 Infineon Technologies Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 99mOhm @ 18A, 10V 3.5V @ 1.2mA ±20V 2800 pF @ 100V 255W (Tc) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-1 TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Not For New Designs
IPW60R125C6FKSA1 Infineon Technologies Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 960µA ±20V 2127 pF @ 100V 219W (Tc) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-1 TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Not For New Designs
IXFR64N60Q3 IXYS Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 104mOhm @ 32A, 10V 6.5V @ 4mA ±30V 9930 pF @ 25V 568W (Tc) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active
SPW32N50C3FKSA1 Infineon Technologies Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 560 V 32A (Tc) 10V 110mOhm @ 20A, 10V 3.9V @ 1.8mA ±20V 4200 pF @ 25V 284W (Tc) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-1 TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active
SPW35N60CFDFKSA1 Infineon Technologies Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 600 V 34.1A (Tc) 10V 118mOhm @ 21.6A, 10V 5V @ 1.9mA ±20V 5060 pF @ 25V 313W (Tc) -55°C ~ 150°C (TJ) Through Hole PG-TO247-3-1 TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Not For New Designs
STW34NM60N STMicroelectronics Transistors, FETs, MOSFETs N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA ±25V 2722 pF @ 100V 250W (Tc) 150°C (TJ) Through Hole TO-247-3 TO-247-3 ROHS3 Compliant 1 (Unlimited) REACH Unaffected Active

Engineering Selection Recommendations

Preferred substitute parts should be selected with consideration for active product status, ROHS3 compliance, and MSL 1 (unlimited) and REACH unaffected ratings. Where product status is "Not For New Designs," substitute selection should be aligned with products in "Active" status. All listed substitute parts meet ROHS3 and MSL 1 (unlimited) requirements and are REACH unaffected.

Frequently Asked Questions (FAQ)

Q: Which parameters must match when selecting a substitute for APL602B2G?
A: The substitution requires matching the FET type, technology, drain to source voltage (Vdss), continuous drain current (Id) at 25°C, maximum Rds On values, drive voltage, operating temperature, mounting type, package/case, RoHS status, MSL, and REACH status.

Q: Are the TO-247-3 and variant packages compatible?
A: Substitutes listed use TO-247-3 compatible through-hole packages. Package compatibility must be verified according to mechanical datasheets if strict variant fitting is required.

Q: Do all substitutes meet RoHS and REACH compliance?
A: All substitutes are specified as ROHS3 compliant and REACH unaffected, with MSL 1 (unlimited).

Q: Can substitutes with lower drain current or different Rds On be used?
A: Acceptability is determined strictly by the provided parameter alignment; only parts matching or exceeding the specified limits in critical parameters are included.

Q: Are there substitutes with active product status?
A: Substitute parts such as IPW60R099CPAFKSA1, IXFR64N60Q3, SPW32N50C3FKSA1, and STW34NM60N are specified as "Active."

Request Quote (Ships tomorrow)