Equivalent & Substitute Parts for APL502B2G

Part Overview

The Microchip Technology APL502B2G is an active N-channel MOSFET from the Transistors, FETs, MOSFETs category, supplied in tube packaging and featuring a TO-247-3 variant Through Hole package. The device is rated for 500V drain-to-source voltage and 58A continuous drain current at 25°C (Tc), with a maximum power dissipation of 730W (Tc). As applications may require alternatives due to availability, supply chain optimization, or the need for comparable parameters within the same mounting and packaging standards, it is essential to reference strictly comparable substitute part numbers.

Key Parameters

Parameter	Value
Manufacturer Part Number	APL502B2G
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	90mOhm @ 29A, 12V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 25 V
Power Dissipation (Max)	730W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitute part selection for APL502B2G is strictly determined by matching the following parameters within the Transistors, FETs, MOSFETs category:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: Comparable values
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Operating Temperature
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant or TO-247-3
RoHS and REACH compliance
MSL level

These matching criteria ensure electrical and mechanical compatibility, compliance, and suitability within standard MOSFET applications.

Parameter Comparison

Parameter	APL502B2G	IXFR64N50Q3	IXFR80N50Q3	IXFX64N50Q3	IXFX78N50P3
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	500 V	500 V	500 V	500 V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)	45A (Tc)	50A (Tc)	64A (Tc)	78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 29A, 12V	95mOhm @ 32A, 10V	72mOhm @ 40A, 10V	85mOhm @ 32A, 10V	68mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA	6.5V @ 4mA	6.5V @ 8mA	6.5V @ 4mA	5V @ 4mA
Vgs (Max)	±30V	±30V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 25 V	6950 pF @ 25 V	10000 pF @ 25 V	6950 pF @ 25 V	9900 pF @ 25 V
Power Dissipation (Max)	730W (Tc)	500W (Tc)	570W (Tc)	1000W (Tc)	1130W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3 Variant	TO-247-3	TO-247-3	TO-247-3 Variant	TO-247-3 Variant
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99	EAR99	EAR99

Engineering Selection Recommendations

All listed substitute parts are active, with matching RoHS3 and REACH compliance statuses, and share a Moisture Sensitivity Level (MSL) of 1 (Unlimited). Each substitute is provided in Through Hole mounting and a TO-247-3 or compatible variant package, meeting the industry standards for power MOSFETs in this category. As inventory status for each substitute is specified, only active, original new stock should be selected within the mechanical and electrical key parameter requirements.

Frequently Asked Questions (FAQ)

What parameters are critical when substituting APL502B2G?
Critical parameters include FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), Rds On, gate-source voltage ratings (Vgs, Vgs(th)), input capacitance (Ciss), power dissipation, operating temperature, compliance status (RoHS, REACH), mounting type, and package.

Are there any differences in package compatibility among the substitutes?
All substitutes use Through Hole mounting with a TO-247-3 or TO-247-3 Variant package. Assess the specific “Variant” notation to ensure pinout and dimension compatibility in the end application.

Why is compliance status significant in MOSFET substitution?
RoHS3 and REACH compliance ensures environmental and supply chain compatibility within regulated markets. Consistent MSL (Moisture Sensitivity Level) allows for standard handling and processing.

How does continuous drain current affect substitute selection?
Substitutes list a range of continuous drain currents. Selection should remain within the application's electrical requirements as specified in the provided data, without exceeding design tolerances.

Is substituting across manufacturers or series permissible in this comparison?
All substitutes appear in the same application category and meet key electrical and mechanical criteria provided. Manufacturer and product series do not affect baseline compatibility as long as specified parameters match.

What should be considered with respect to drive voltage and threshold voltages?
Drive voltage and threshold voltage values are listed for all substitutes. Use only substitutes with values that conform to system design requirements and provided parameter limits.

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