AOWF11C60 Equivalent & Substitute Parts

Part Overview

The AOWF11C60 is an N-Channel MOSFET rated for 600V drain-to-source voltage with 11A continuous drain current in a TO-262F package. Manufactured by Alpha & Omega Semiconductor Inc., this device is classified as obsolete. Due to its obsolete status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Substiute Parts

AOWF11C60
Alpha & Omega Semiconductor Inc.In Stock: 2089AOWF11C60 Datasheet
AOWF11C60
Current Part
AOWF11A60
Alpha & Omega Semiconductor Inc.In Stock: 1170AOWF11A60 Datasheet
AOWF11A60
MFR Recommended
STFU13N60M2
STMicroelectronicsIn Stock: 1196STFU13N60M2 Datasheet
STFU13N60M2
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 11 A (Tc)
On-State Resistance (Rds On Max) @ 5.5A, 10V 400 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 5 V
Gate Charge (Qg Max) @ 10V 42 nC
Input Capacitance (Ciss Max) @ 100V 2000 pF
Power Dissipation (Max) 28 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-262F Through Hole
Moisture Sensitivity Level 1 Unlimited

Substitute Part Grouping Explanation

Substitution of the AOWF11C60 is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): 600V minimum
  • Continuous Drain Current (Id): 11A minimum at 25°C
  • FET Type: N-Channel MOSFET
  • Mounting Type: Through Hole
  • Operating Temperature Range: -55°C to 150°C minimum

Acceptable Variation Parameters:

  • On-State Resistance (Rds On): Lower values are acceptable (improved performance)
  • Gate Charge (Qg): Lower values are acceptable (improved switching characteristics)
  • Input Capacitance (Ciss): Lower values are acceptable (improved switching speed)
  • Power Dissipation: Lower values are acceptable (improved thermal performance)
  • Gate Threshold Voltage (Vgs(th)): Minor variations within ±1V are acceptable
  • Maximum Gate Voltage (Vgs Max): Equal or higher values are acceptable

Package Compatibility: Substitutes must use through-hole mounting packages compatible with TO-262 footprints. Package variants including TO-262F, TO-262AA, and TO-220FP are considered mechanically compatible for through-hole applications.

Parameter Comparison

Parameter AOWF11C60 AOWF11A60 STFU13N60M2 Unit
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc. STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 600 600 V
Continuous Drain Current (Id) @ 25°C 11 11 A (Tc)
On-State Resistance (Rds On Max) @ 5.5A, 10V 400 380 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 5 4 V
Gate Charge (Qg Max) @ 10V 42 17 nC
Input Capacitance (Ciss Max) @ 100V 2000 580 pF
Power Dissipation (Max) 28 25 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Package Type TO-262F TO-262F TO-220FP
Mounting Type Through Hole Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

AOWF11A60 (Alpha & Omega Semiconductor Inc.)

The AOWF11A60 is the primary substitute for the obsolete AOWF11C60. Both devices share the same manufacturer, base product number (AOWF11), and package type (TO-262F). The AOWF11A60 is classified as Active, ensuring long-term availability and supply chain continuity. This part carries ROHS3 compliance certification, meeting current environmental and regulatory requirements. Electrical parameters are equivalent to the AOWF11C60, with identical voltage and current ratings. Selection of the AOWF11A60 eliminates obsolescence risk while maintaining full design compatibility.

STFU13N60M2 (STMicroelectronics)

The STFU13N60M2 is an alternative substitute manufactured by STMicroelectronics under the MDmesh™ M2 series. This device meets all critical electrical parameters: 600V Vdss, 11A continuous drain current, and -55°C to 150°C operating temperature range. The STFU13N60M2 demonstrates improved electrical performance characteristics compared to the AOWF11C60, including lower on-state resistance (380 mOhm vs. 400 mOhm), reduced gate charge (17 nC vs. 42 nC), and lower input capacitance (580 pF vs. 2000 pF). The device is classified as Active with ROHS3 compliance. Package compatibility requires mechanical evaluation: the STFU13N60M2 uses TO-220FP packaging, which differs from the TO-262F footprint of the original part. PCB layout modification is necessary for this substitution.

Frequently Asked Questions (FAQ)

Q: Can the AOWF11A60 be used as a direct replacement for the AOWF11C60?

A: Yes. The AOWF11A60 is a direct substitute. Both parts share identical package type (TO-262F), electrical ratings (600V, 11A), and thermal specifications. The AOWF11A60 is Active status, eliminating obsolescence concerns.

Q: What are the key differences between the AOWF11C60 and STFU13N60M2?

A: Both devices meet the critical electrical requirements: 600V Vdss and 11A continuous drain current. The STFU13N60M2 offers superior performance with lower on-state resistance (380 mOhm vs. 400 mOhm), significantly reduced gate charge (17 nC vs. 42 nC), and lower input capacitance (580 pF vs. 2000 pF). The primary difference is package type: STFU13N60M2 uses TO-220FP instead of TO-262F, requiring PCB layout modification.

Q: Is the STFU13N60M2 package compatible with the AOWF11C60 footprint?

A: No. The AOWF11C60 uses TO-262F packaging, while the STFU13N60M2 uses TO-220FP packaging. These are different through-hole footprints. PCB redesign is required to accommodate the STFU13N60M2.

Q: What compliance certifications apply to the substitute parts?

A: Both AOWF11A60 and STFU13N60M2 are ROHS3 compliant and REACH unaffected. Both carry Moisture Sensitivity Level 1 (Unlimited). These certifications meet current environmental and regulatory standards.

Q: Why does the STFU13N60M2 have lower gate charge than the AOWF11C60?

A: Gate charge is a device-specific characteristic determined by the semiconductor design and manufacturing process. The STFU13N60M2, manufactured by STMicroelectronics using MDmesh™ M2 technology, exhibits lower gate charge (17 nC vs. 42 nC). Lower gate charge results in faster switching transitions and reduced gate drive power requirements.

Q: Can both substitute parts be used interchangeably in the same design?

A: The AOWF11A60 is a direct footprint replacement. The STFU13N60M2 requires PCB layout modification due to different packaging. Both meet electrical specifications, but design implementation differs. Selection depends on whether PCB redesign is acceptable.

Q: What is the inventory status of these substitute parts?

A: AOWF11A60 has 1099 pieces in stock. STFU13N60M2 has 1147 pieces in stock. Both are available for immediate procurement.

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