AOW418 N-Channel MOSFET 100V 9.5A/105A TO-262 Equivalent & Substitute Parts

Part Overview

The AOW418 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., designed for through-hole applications in the TO-262 package. This device operates at 100V drain-to-source voltage with continuous drain current ratings of 9.5A at Ta (ambient temperature) and 105A at Tc (case temperature). The AOW418 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, maintenance, and production continuity.

Substiute Parts

AOW418

Alpha & Omega Semiconductor Inc.In Stock: 4988AOW418 Datasheet

Current PartRFQ

FDI045N10A-F102

onsemiIn Stock: 1211FDI045N10A-F102 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the obsolete AOW418 is determined by strict alignment of the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Operating Temperature Range: Must support -55°C to 175°C (TJ)
• Continuous Drain Current: Must meet or exceed the application requirement (9.5A Ta or 105A Tc)

Mechanical Compatibility Criteria:

• Mounting Type: Must be Through Hole
• Package / Case: Must be compatible with TO-262-3 Long Leads, I2PAK, or TO-262AA footprints

The substitute part FDI045N10A-F102 (onsemi) satisfies all mandatory electrical and mechanical parameters. Both devices share identical Vdss (100V), N-Channel configuration, MOSFET technology, and compatible TO-262 (I2PAK) packaging. The substitute part exceeds the continuous drain current specification (120A Tc vs. 105A Tc) and maintains the required operating temperature range.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The AOW418 is classified as obsolete. The FDI045N10A-F102 is classified as active, ensuring ongoing availability, technical support, and manufacturing continuity.

Compliance and Certification: The FDI045N10A-F102 carries RoHS3 compliance certification, whereas the AOW418 does not specify RoHS status. Both devices are REACH Unaffected and carry EAR99 ECCN classification. The substitute part's RoHS3 compliance aligns with current regulatory requirements for electronic components in many markets.

Electrical Performance: The FDI045N10A-F102 demonstrates superior on-resistance characteristics (4.5 mOhm @ 100A, 10V versus 10 mOhm @ 20A, 10V), resulting in lower conduction losses and reduced thermal dissipation in high-current applications. Gate charge is lower (74 nC versus 83 nC), enabling faster switching transitions.

Thermal Performance: The substitute part specifies 263W maximum power dissipation at Tc, compared to 333W for the AOW418 at Tc. This difference reflects the improved on-resistance and does not indicate reduced capability; the lower Rds On value results in lower I²R losses under equivalent operating conditions.

Mechanical Compatibility: Both devices utilize identical TO-262 (I2PAK) through-hole packaging with long leads, ensuring direct PCB footprint compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the FDI045N10A-F102 directly replace the AOW418 in existing designs?

A: Yes. Both devices share identical Vdss (100V), N-Channel MOSFET configuration, operating temperature range (-55°C to 175°C TJ), and TO-262 (I2PAK) through-hole packaging. PCB footprints and lead spacing are compatible without modification.

Q: What are the key electrical differences between these parts?

A: The FDI045N10A-F102 exhibits lower on-resistance (4.5 mOhm @ 100A, 10V versus 10 mOhm @ 20A, 10V) and lower gate charge (74 nC versus 83 nC @ 10V). Continuous drain current is higher (120A Tc versus 105A Tc). Gate threshold voltage is marginally higher (4.0V versus 3.9V @ 250µA).

Q: Does the lower power dissipation rating of the FDI045N10A-F102 indicate reduced performance?

A: No. The FDI045N10A-F102 specifies 263W maximum power dissipation at Tc, compared to 333W for the AOW418. This reflects the superior on-resistance characteristic (4.5 mOhm versus 10 mOhm), which reduces I²R losses. Lower power dissipation under equivalent operating conditions indicates improved efficiency, not reduced capability.

Q: Are there packaging considerations when substituting these parts?

A: Both devices use TO-262-3 Long Leads (I2PAK) through-hole packaging. Lead spacing, pin configuration, and PCB mounting requirements are identical. No package-related modifications are required.

Q: What is the significance of the RoHS3 compliance on the FDI045N10A-F102?

A: RoHS3 compliance indicates the substitute part meets current Restriction of Hazardous Substances regulations, ensuring compatibility with modern supply chain requirements and regulatory frameworks in many markets. The AOW418 does not specify RoHS status.

Q: Why is the AOW418 listed as obsolete?

A: Obsolescence indicates the part is no longer in active production by the manufacturer. The FDI045N10A-F102, classified as active, ensures ongoing availability, technical documentation updates, and manufacturing support.

Q: Are the gate threshold voltages sufficiently similar for direct substitution?

A: Yes. The gate threshold voltages are 3.9V (AOW418) and 4.0V (FDI045N10A-F102) at 250µA. This 0.1V difference is within typical gate drive circuit tolerances and does not affect circuit operation in standard applications.

Q: How do the input capacitance values compare?

A: Input capacitance (Ciss) values are nearly identical: 5200 pF (AOW418) and 5270 pF (FDI045N10A-F102) at 50V Vds. This minimal difference (70 pF) does not affect switching characteristics or gate drive requirements.