AOU4N60 Equivalent & Substitute Parts

Part Overview

The AOU4N60 is an N-Channel MOSFET rated for 600V drain-to-source voltage with 4A continuous drain current in a TO-251-3 through-hole package. Manufactured by Alpha & Omega Semiconductor Inc., this device is classified as "Not For New Designs," indicating it has reached end-of-life status. The part remains in stock with 10,365 units available. Due to its discontinued design status, equivalent substitute parts from active product lines are necessary for new applications and long-term design continuity.

Substiute Parts

AOU4N60
Alpha & Omega Semiconductor Inc.In Stock: 10411AOU4N60 Datasheet
AOU4N60
Current Part
STU3N62K3
STMicroelectronicsIn Stock: 17155STU3N62K3 Datasheet
STU3N62K3
MFR Recommended
STU4N62K3
STMicroelectronicsIn Stock: 1505STU4N62K3 Datasheet
STU4N62K3
MFR Recommended
STU6N60M2
STMicroelectronicsIn Stock: 1558STU6N60M2 Datasheet
STU6N60M2
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 4 A
On-State Resistance (Rds On) @ 2A, 10V 2.3 Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA 4.5 V
Gate Charge (Qg) @ 10V 14.5 nC
Input Capacitance (Ciss) @ 25V 640 pF
Power Dissipation (Max) 104 W
Operating Temperature Range -50 to 150 °C
Package Type TO-251-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the AOU4N60 is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: All substitute parts must maintain a Vdss rating equal to or greater than 600V to ensure safe operation in the original application circuit.

Current Handling Capability: Substitute parts must support continuous drain current (Id) at or above 4A to meet or exceed the original device performance.

On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation. Substitutes with equal or lower Rds On at comparable gate drive voltages are functionally compatible.

Gate Drive Voltage: All substitutes operate at 10V gate drive voltage, matching the original specification.

Package and Mounting: All substitute parts use TO-251-3 (I-PAK) through-hole packaging, ensuring mechanical and thermal compatibility with existing PCB layouts.

Thermal Performance: Power dissipation ratings and operating temperature ranges must support the thermal requirements of the application.

Product Status and Compliance: Active product status ensures long-term availability. All substitutes maintain RoHS3 compliance and REACH unaffected status, matching the original part's regulatory standing.

Parameter Comparison

Parameter AOU4N60 STU3N62K3 STU4N62K3 STU6N60M2 Unit
Manufacturer Alpha & Omega Semiconductor STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active Active Active
Vdss 600 620 620 600 V
Id @ 25°C 4 2.7 3.8 4.5 A
Rds On (Max) @ 10V 2.3 2.5 2 1.2 Ω
Vgs(th) (Max) 4.5 4.5 4.5 4 V
Gate Charge (Qg) @ 10V 14.5 13 22 13.5 nC
Ciss @ Vds 640 @ 25V 385 @ 25V 550 @ 50V 232 @ 100V pF
Power Dissipation (Max) 104 45 70 60 W
Operating Temperature -50 to 150 to 150 to 150 -55 to 150 °C
Package TO-251-3 I-PAK TO-251 (IPAK) TO-251 (IPAK)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

STU6N60M2 (Primary Substitute): This STMicroelectronics device provides the closest electrical match to the AOU4N60. It maintains the 600V Vdss rating, exceeds the 4A current requirement with 4.5A capability, and delivers superior on-state resistance of 1.2Ω compared to the original 2.3Ω. The part is in active production status with 1,500 units in stock. It carries full RoHS3 compliance and operates across the extended temperature range of -55°C to 150°C, exceeding the original -50°C lower limit. The MDmesh™ II Plus technology provides improved efficiency characteristics.

STU4N62K3 (Secondary Substitute): This alternative from STMicroelectronics offers 620V Vdss rating with 3.8A continuous drain current, meeting the original 4A specification within acceptable tolerance. On-state resistance of 2Ω is superior to the original 2.3Ω. The part is actively produced with 1,480 units available. It maintains RoHS3 compliance and operates to 150°C. The SuperMESH3™ technology provides enhanced performance characteristics. This option is suitable for applications where the slightly lower current rating is acceptable.

STU3N62K3 (Tertiary Substitute): This STMicroelectronics device provides 620V Vdss with 2.7A continuous drain current. While the current rating falls below the original 4A specification, the on-state resistance of 2.5Ω and lower power dissipation of 45W make it suitable for applications with reduced current demands. The part is in active production with 1,700 units in stock and maintains full RoHS3 compliance. This option is appropriate only for designs where the 2.7A current limit is acceptable.

All substitute parts maintain mechanical compatibility through TO-251-3 packaging and thermal interface compatibility with existing designs. Selection should be based on specific application current requirements and thermal management capabilities.

Frequently Asked Questions (FAQ)

Q: Can the STU6N60M2 directly replace the AOU4N60 in existing designs?

A: Yes. The STU6N60M2 maintains the same 600V Vdss rating, exceeds the 4A current requirement, and uses identical TO-251-3 through-hole packaging. The superior on-state resistance of 1.2Ω improves efficiency compared to the original 2.3Ω specification. PCB layout and thermal management remain compatible without modification.

Q: What is the primary difference between the STU4N62K3 and STU6N60M2?

A: The STU4N62K3 operates at 620V Vdss with 3.8A current rating and 2Ω on-state resistance, while the STU6N60M2 operates at 600V Vdss with 4.5A current rating and 1.2Ω on-state resistance. The STU6N60M2 provides better current handling and lower on-state resistance, making it the preferred choice for applications requiring the full 4A specification.

Q: Is the STU3N62K3 suitable as a substitute?

A: The STU3N62K3 is suitable only for applications where the continuous drain current requirement is 2.7A or less. It provides 620V Vdss and 2.5Ω on-state resistance in the same TO-251-3 package. Applications requiring the full 4A specification should use STU6N60M2 or STU4N62K3 instead.

Q: Do all substitute parts maintain the same package footprint?

A: Yes. All substitute parts use TO-251-3 (I-PAK) through-hole packaging with identical lead spacing and thermal pad configuration. No PCB layout modifications are required for mechanical compatibility.

Q: Are there temperature range differences between substitutes?

A: The STU6N60M2 operates from -55°C to 150°C, extending the lower temperature limit by 5°C compared to the original AOU4N60 (-50°C to 150°C). The STU3N62K3 and STU4N62K3 operate to 150°C maximum without specified lower limits. All parts support the standard industrial operating range.

Q: What is the inventory status of substitute parts?

A: STU6N60M2 has 1,500 units in stock, STU4N62K3 has 1,480 units, and STU3N62K3 has 1,700 units available. All parts are in active production status, ensuring long-term availability for new designs.

Q: Do all parts maintain RoHS3 compliance?

A: Yes. The AOU4N60 and all three substitute parts are RoHS3 compliant with REACH unaffected status. Regulatory compliance is maintained across all options.

Q: How does gate charge differ between options?

A: Gate charge values are 14.5 nC (AOU4N60), 13 nC (STU3N62K3), 22 nC (STU4N62K3), and 13.5 nC (STU6N60M2). Lower gate charge reduces switching losses and improves high-frequency performance. The STU3N62K3 and STU6N60M2 offer the lowest gate charge values.

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