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AOU2N60 N-Channel MOSFET 600V 2A Equivalent & Substitute Parts
Part Overview
The AOU2N60 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 600V drain-to-source voltage with 2A continuous drain current at 25°C. This device is packaged in TO-251-3 (IPak) configuration for through-hole mounting applications. The part is designated as "Not For New Designs," indicating it has reached end-of-life status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support existing production requirements with functionally compatible alternatives.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 600 | V |
| Current - Continuous Drain (Id) @ 25°C | 2 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | V |
| Rds On (Max) @ Id, Vgs | 4.4 | Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4.5 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 | nC @ 10V |
| Vgs (Max) | ±30 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 | pF @ 25V |
| Power Dissipation (Max) | 56.8 | W (Tc) |
| Operating Temperature | -50 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the AOU2N60 is determined by strict equivalence across the following critical parameters:
Primary Substitution Criteria:
- FET Type: N-Channel (required match)
- Drain to Source Voltage (Vdss): 600V minimum (equal or higher voltage rating acceptable)
- Current - Continuous Drain (Id) @ 25°C: 2A minimum (equal or higher current rating acceptable)
- Drive Voltage (Max Rds On): 10V (standard gate drive voltage)
- Mounting Type: Through Hole (mechanical compatibility)
- Package / Case: TO-251-3, IPak, or TO-251AA variants (pin-compatible packages)
Secondary Compatibility Parameters:
- Rds On (Max) @ Id, Vgs: Comparable on-resistance characteristics
- Vgs(th) (Max) @ Id: Gate threshold voltage within acceptable range
- Gate Charge (Qg): Lower gate charge preferred for improved switching performance
- Input Capacitance (Ciss): Lower capacitance preferred for faster switching
- Power Dissipation (Max): Equal or higher thermal capability acceptable
- Operating Temperature Range: -55°C to 150°C or better
- RoHS3 Compliance: Required for regulatory alignment
- MSL Rating: Level 1 (Unlimited) preferred for handling compatibility
Substitute parts meeting these criteria maintain functional equivalence while accommodating design flexibility and supply chain alternatives.
Parameter Comparison
| Parameter | AOU2N60 | IRFUC20PBF | STD2HNK60Z-1 | STD3NK80Z-1 | STU2LN60K3 | TK2Q60D(Q) |
|---|---|---|---|---|---|---|
| Manufacturer | Alpha & Omega | Vishay Siliconix | STMicroelectronics | STMicroelectronics | STMicroelectronics | Toshiba |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Vdss (V) | 600 | 600 | 600 | 800 | 600 | 600 |
| Id @ 25°C (A) | 2 | 2 | 2 | 2.5 | 2 | 2 |
| Drive Voltage (V) | 10 | 10 | 10 | 10 | 10 | 10 |
| Rds On (Max) @ Id, Vgs (Ohm) | 4.4 @ 1A, 10V | 4.4 @ 1.2A, 10V | 4.8 @ 1A, 10V | 4.5 @ 1.25A, 10V | 4.5 @ 1A, 10V | 4.3 @ 1A, 10V |
| Vgs(th) (Max) @ Id (V) | 4.5 @ 250µA | 4 @ 250µA | 4.5 @ 50µA | 4.5 @ 50µA | 4.5 @ 50µA | 4.4 @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs (nC) | 11 @ 10V | 18 @ 10V | 15 @ 10V | 19 @ 10V | 12 @ 10V | 7 @ 10V |
| Vgs (Max) (V) | ±30 | ±20 | ±30 | ±30 | ±30 | ±30 |
| Ciss (Max) @ Vds (pF) | 325 @ 25V | 350 @ 25V | 280 @ 25V | 485 @ 25V | 235 @ 50V | 280 @ 25V |
| Power Dissipation (Max) (W) | 56.8 (Tc) | 42 (Tc) | 45 (Tc) | 70 (Tc) | 45 (Tc) | 60 (Tc) |
| Operating Temperature (°C) | -50 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | to 150 | to 150 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | TO-251 (IPAK) | TO-251 (IPAK) | TO-251 (IPAK) | PW-MOLD2 |
| Product Status | Not For New Designs | Active | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Direct Equivalents (600V, 2A Rating):
The IRFUC20PBF (Vishay Siliconix), STD2HNK60Z-1 (STMicroelectronics), STU2LN60K3 (STMicroelectronics), and TK2Q60D(Q) (Toshiba) provide direct functional equivalence to the AOU2N60 across voltage and current ratings. All substitute parts maintain ROHS3 compliance and MSL Level 1 rating. These devices are classified as Active products, ensuring continued availability and manufacturing support.
Enhanced Rating Alternative:
The STD3NK80Z-1 (STMicroelectronics) offers higher voltage (800V) and current (2.5A) ratings while maintaining the same 10V drive voltage and TO-251 (IPAK) package compatibility. This part is suitable for applications requiring increased voltage margin or higher current capacity.
Selection Basis:
- IRFUC20PBF: Maintains 4.4Ohm on-resistance specification with extended lower temperature rating (-55°C). Suitable for direct replacement in existing designs.
- STD2HNK60Z-1: Offers SuperMESH™ technology with comparable on-resistance (4.8Ohm) and reduced input capacitance (280pF). Active product status with high inventory availability.
- STU2LN60K3: SuperMESH3™ technology variant with lowest input capacitance (235pF @ 50V) and reduced gate charge (12nC). Optimized for switching performance.
- TK2Q60D(Q): π-MOSVII series with lowest gate charge (7nC) and on-resistance (4.3Ohm). Toshiba manufacturing with 60W power dissipation capability.
- STD3NK80Z-1: Higher voltage rating (800V) for applications requiring increased design margin or overvoltage protection headroom.
All substitute parts are Active products with established supply chains and manufacturing continuity.
Frequently Asked Questions (FAQ)
Q: Can the IRFUC20PBF directly replace the AOU2N60 in existing PCB designs?
A: Yes. The IRFUC20PBF maintains identical voltage (600V) and current (2A) ratings, equivalent on-resistance (4.4Ohm @ 1.2A, 10V), and compatible TO-251AA packaging. Pin configuration and thermal characteristics are compatible with existing through-hole layouts.
Q: What is the difference between STD2HNK60Z-1 and STU2LN60K3?
A: Both are STMicroelectronics 600V, 2A N-Channel MOSFETs in TO-251 (IPAK) packages. The STU2LN60K3 uses SuperMESH3™ technology with lower input capacitance (235pF @ 50V) and gate charge (12nC), providing improved switching speed. The STD2HNK60Z-1 uses SuperMESH™ technology with slightly higher capacitance (280pF @ 25V) and gate charge (15nC).
Q: Why is the STD3NK80Z-1 listed as a substitute if it has different voltage and current ratings?
A: The STD3NK80Z-1 (800V, 2.5A) is a functional substitute for applications where higher voltage margin or increased current capacity is acceptable. The higher ratings do not prevent operation in 600V, 2A circuits; they provide additional design headroom. This part is suitable only when circuit topology permits the higher voltage rating.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts (IRFUC20PBF, STD2HNK60Z-1, STD3NK80Z-1, STU2LN60K3, and TK2Q60D(Q)) are ROHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original AOU2N60 specifications.
Q: What is the significance of gate charge (Qg) differences among substitute parts?
A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (TK2Q60D(Q) at 7nC) enables faster switching transitions and reduces gate driver power dissipation. Higher gate charge (IRFUC20PBF at 18nC) requires longer switching times but may be acceptable in lower-frequency applications. Selection depends on circuit switching frequency and gate drive capability.
Q: Can the TK2Q60D(Q) be used in applications requiring the lowest on-resistance?
A: Yes. The TK2Q60D(Q) offers the lowest on-resistance (4.3Ohm @ 1A, 10V) among all listed substitutes, combined with the lowest gate charge (7nC). This combination provides superior switching performance and reduced conduction losses. The PW-MOLD2 package is mechanically compatible with TO-251 through-hole layouts.
Q: What is the operating temperature range difference between AOU2N60 and substitute parts?
A: The AOU2N60 operates from -50°C to 150°C (TJ). Most substitute parts extend the lower temperature limit to -55°C, providing improved cold-temperature performance. This difference is not a limitation for direct substitution in existing designs.
Q: Are there inventory considerations when selecting a substitute?
A: Yes. Current inventory levels vary: STD3NK80Z-1 (80,100 pcs), STD2HNK60Z-1 (10,710 pcs), IRFUC20PBF (1,889 pcs), TK2Q60D(Q) (3,000 pcs), and STU2LN60K3 (1,575 pcs). For high-volume production, STD3NK80Z-1 and STD2HNK60Z-1 offer superior availability.
Q: What is the difference between TO-251-3 Short Leads and TO-251AA packaging?
A: Both designations refer to compatible through-hole IPak packages with identical pin spacing and thermal characteristics. TO-251-3 Short Leads and TO-251AA are mechanically and electrically interchangeable for PCB mounting purposes.
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