AOTF5N50FD N-Channel MOSFET 500V 5A TO-220 Equivalent & Substitute Parts

Part Overview

The AOTF5N50FD is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Alpha & Omega Semiconductor Inc., rated for 500V drain-to-source voltage and 5A continuous drain current in a through-hole TO-220-3 package. This device is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

The AOTF5N50FD serves in high-voltage switching applications requiring moderate current handling and thermal dissipation up to 35W. Equivalent substitutes must maintain compatibility with the original electrical specifications, package form factor, and thermal characteristics to ensure direct replacement without circuit redesign.

Key Parameters

Parameter	Value	Unit	Test Condition
Drain-to-Source Voltage (Vdss)	500	V	—
Continuous Drain Current (Id) @ 25°C	5	A	Tc
On-State Drain-Source Resistance (Rds On Max)	1.8	Ω	@ 2.5A, 10V Vgs
Gate-Source Threshold Voltage (Vgs(th) Max)	4.2	V	@ 250µA Id
Gate Charge (Qg Max)	15	nC	@ 10V Vgs
Input Capacitance (Ciss Max)	530	pF	@ 25V Vds
Power Dissipation (Max)	35	W	Tc
Operating Temperature Range	−55 to 150	°C	TJ
Package Type	TO-220-3	—	Through Hole
Gate-Source Voltage (Vgs Max)	±30	V	—

Substitute Part Grouping Explanation

Substitution of the AOTF5N50FD is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 5A at 25°C
On-State Resistance (Rds On): Must not exceed 1.8Ω at specified test conditions
Package Type: Must be TO-220-3 through-hole configuration
Gate-Source Voltage Rating (Vgs): Must support ±30V
Operating Temperature: Must support −55°C to 150°C range
Technology: N-Channel MOSFET (Metal Oxide)

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching; values up to 16.6nC are acceptable
Input Capacitance (Ciss): Values between 490pF and 940pF maintain circuit compatibility
Power Dissipation: Minimum 27.4W required for thermal equivalence
RoHS Compliance: ROHS3 compliance required for environmental standards

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary criteria within specified tolerances) and Functional Alternatives (meeting primary criteria with minor parameter variations that do not affect circuit operation).

Parameter Comparison

Parameter	AOTF5N50FD	TK5A55D(STA4,Q,M)	TK6A45DA(STA4,Q,M)	2SK3199	FDPF7N50U-G	RJK5033DPP-M0#T2	TK4A53D(STA4,Q,M)	TK6A53D(STA4,Q,M)
Vdss (V)	500	550	450	500	500	500	525	525
Id @ 25°C (A)	5	5	5.5	5	5	6	4	6
Rds On Max (Ω)	1.8	1.7	1.35	1.5	1.5	1.3	1.7	1.3
Vgs(th) Max (V)	4.2	4.4	4.4	4	5	—	4.4	4.4
Qg Max (nC)	15	11	11	—	16.6	—	11	12
Ciss Max (pF)	530	540	490	650	940	600	490	600
Power Dissipation Max (W)	35	35	—	30	31.3	27.4	35	35
Operating Temp (°C)	−55 to 150	150	150	150	−55 to 150	150	150	150
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Vgs Max (V)	±30	±30	±30	±30	±30	±30	±30	±30
Product Status	Obsolete	Active	Active	Active	Obsolete	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	RoHS	ROHS3	ROHS3	RoHS	ROHS3

Engineering Selection Recommendations

Tier 1 — Direct Electrical Equivalents (Preferred for Drop-In Replacement)

The following substitute parts meet or exceed all primary electrical specifications and maintain full compatibility with the AOTF5N50FD circuit requirements:

TK5A55D(STA4,Q,M) (Toshiba Semiconductor and Storage): Vdss 550V, Id 5A, Rds On 1.7Ω. Active product status with ROHS3 compliance. Exceeds voltage rating by 50V, providing enhanced margin. Gate charge reduced to 11nC improves switching performance. Inventory: 1048 units.

2SK3199 (Sanken Electric USA Inc.): Vdss 500V, Id 5A, Rds On 1.5Ω. Active product status with RoHS compliance. Exact voltage match with improved on-state resistance. Inventory: 2000 units.

RJK5033DPP-M0#T2 (Renesas Electronics Corporation): Vdss 500V, Id 6A, Rds On 1.3Ω. Active product status with ROHS3 compliance. Exceeds current rating by 1A and provides superior on-state resistance. TO-220FL package variant maintains mechanical compatibility. Inventory: 3135 units.

Tier 2 — Functional Alternatives (Acceptable with Parameter Verification)

The following substitute parts satisfy primary criteria with minor parameter deviations:

TK6A53D(STA4,Q,M) (Toshiba Semiconductor and Storage): Vdss 525V, Id 6A, Rds On 1.3Ω. Active product status with ROHS3 compliance. Voltage rating exceeds specification by 25V; current and resistance ratings exceed requirements. Inventory: 738 units.

TK4A53D(STA4,Q,M) (Toshiba Semiconductor and Storage): Vdss 525V, Id 4A, Rds On 1.7Ω. Active product status with RoHS compliance. Voltage rating exceeds specification; current rating is 1A below original specification. Suitable for applications with reduced current demand. Inventory: 633 units.

TK6A45DA(STA4,Q,M) (Toshiba Semiconductor and Storage): Vdss 450V, Id 5.5A, Rds On 1.35Ω. Active product status with ROHS3 compliance. Voltage rating is 50V below specification; current and resistance ratings exceed requirements. Suitable only for applications with maximum operating voltage below 450V. Inventory: 725 units.

Not Recommended for Direct Substitution:

FDPF7N50U-G (onsemi): Obsolete product status. Although electrical parameters are compatible, obsolete classification limits long-term availability and support.

IXBH24N170 (IXYS): This is an IGBT device (1700V, 60A), not a MOSFET. Fundamentally different semiconductor technology and electrical characteristics render it unsuitable for direct substitution despite voltage rating notation.

Frequently Asked Questions (FAQ)

Q: Can FDPF7N50U-G replace AOTF5N50FD in production designs?

A: FDPF7N50U-G meets all electrical specifications (500V, 5A, 1.5Ω Rds On) and shares identical package configuration. However, both devices are classified as obsolete. For new production, select from active-status alternatives such as TK5A55D(STA4,Q,M), 2SK3199, or RJK5033DPP-M0#T2 to ensure long-term supply chain stability.

Q: What is the significance of Rds On variation among substitute parts?

A: On-state drain-source resistance directly affects power dissipation and thermal performance. Lower Rds On values (1.3Ω vs. 1.8Ω) reduce heat generation, improving efficiency and thermal margin. Substitute parts with Rds On ≤ 1.8Ω maintain or improve thermal performance relative to the original specification.

Q: Are TO-220SIS and TO-220FL packages mechanically compatible with TO-220F?

A: All three package variants (TO-220F, TO-220SIS, TO-220FL) are through-hole TO-220-3 configurations with identical pin spacing (2.54mm) and lead geometry. Mechanical compatibility is confirmed. Verify PCB footprint design accommodates the specific package variant selected.

Q: Why is IXBH24N170 listed in the original substitute list if it is not a MOSFET?

A: IXBH24N170 is an IGBT (Insulated Gate Bipolar Transistor), a different semiconductor technology with fundamentally different electrical characteristics, switching behavior, and thermal properties. It is not suitable for direct substitution in MOSFET circuits. This part appears in the original data but does not meet substitution criteria.

Q: What is the impact of higher Vdss ratings (550V, 525V) on circuit operation?

A: Higher voltage ratings provide increased safety margin and protection against voltage transients. Devices rated 550V or 525V operate safely in 500V circuits with no adverse effects. The higher rating does not degrade performance; it enhances reliability by reducing stress on the semiconductor junction.

Q: How does gate charge (Qg) affect circuit design?

A: Gate charge determines the energy required to switch the transistor on and off. Lower Qg values (11nC vs. 15nC) reduce switching losses and allow faster switching speeds. Substitute parts with Qg ≤ 16.6nC are compatible; lower values improve efficiency without requiring circuit modification.

Q: Which substitute part offers the best thermal performance?

A: RJK5033DPP-M0#T2 provides the lowest on-state resistance (1.3Ω) and lowest power dissipation (27.4W), resulting in superior thermal performance. TK6A53D(STA4,Q,M) offers equivalent on-state resistance (1.3Ω) with higher power dissipation rating (35W). Both are suitable for thermally demanding applications.

Q: Is RoHS compliance mandatory for substitute selection?

A: ROHS3 compliance is required for environmental and regulatory conformance in most markets. All recommended Tier 1 substitutes carry ROHS3 certification. TK4A53D(STA4,Q,M) carries RoHS (non-3) compliance; verify regulatory requirements for your application before selection.

Q: Can TK6A45DA(STA4,Q,M) be used if the circuit operates below 450V?

A: Yes. TK6A45DA(STA4,Q,M) is suitable for applications with maximum operating voltage ≤ 450V. The 450V Vdss rating is adequate for such circuits. Verify actual circuit voltage stress does not exceed this limit before implementation.

Q: What inventory considerations apply to substitute selection?

A: RJK5033DPP-M0#T2 offers the highest inventory (3135 units), followed by 2SK3199 (2000 units) and TK5A55D(STA4,Q,M) (1048 units). For high-volume production, prioritize parts with larger available inventory to ensure supply continuity.

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