AOTF474 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AOTF474 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 75V drain-to-source voltage with continuous drain current of 9A at Ta and 47A at Tc in a Through Hole TO-220FL package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts listed below maintain functional compatibility within specified electrical and mechanical parameters while offering active product status and improved availability.

Substiute Parts

AOTF474
Alpha & Omega Semiconductor Inc.In Stock: 17432AOTF474 Datasheet
AOTF474
Current Part
AOTF288L
Alpha & Omega Semiconductor Inc.In Stock: 3260AOTF288L Datasheet
AOTF288L
MFR Recommended
FDPF045N10A
onsemiIn Stock: 6125FDPF045N10A Datasheet
FDPF045N10A
MFR Recommended
IPA057N08N3GXKSA1
Infineon TechnologiesIn Stock: 1331IPA057N08N3GXKSA1 Datasheet
IPA057N08N3GXKSA1
MFR Recommended
TK8R2A06PL,S4X
Toshiba Semiconductor and StorageIn Stock: 1114TK8R2A06PL,S4X Datasheet
TK8R2A06PL,S4X
MFR Recommended

Key Parameters

Parameter AOTF474 Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain @ 25°C (Ta) 9 A
Current - Continuous Drain @ 25°C (Tc) 47 A
Rds On (Max) @ Id, Vgs 11.3 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 3370 pF @ 30V
Power Dissipation (Max) (Ta) 1.9 W
Power Dissipation (Max) (Tc) 57.5 W
Operating Temperature Range -55 to 175 °C
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the AOTF474 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • FET Type: N-Channel topology must be maintained
  • Technology: MOSFET (Metal Oxide) construction required
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 75V
  • Continuous Drain Current (Tc): Substitute must support minimum 47A at Tc
  • Gate Voltage (Vgs Max): Must support ±20V operation
  • Operating Temperature Range: Must span -55°C to 175°C minimum
  • Rds On characteristics: Lower on-resistance values indicate improved performance

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole required
  • Package / Case: TO-220-3 Full Pack configuration required for PCB compatibility
  • Pin configuration: Standard TO-220 three-pin layout

The four substitute parts listed below satisfy these criteria while offering active product status and improved market availability compared to the obsolete AOTF474.

Parameter Comparison

Parameter AOTF474 AOTF288L FDPF045N10A IPA057N08N3GXKSA1 TK8R2A06PL,S4X Unit
Manufacturer Alpha & Omega Alpha & Omega onsemi Infineon Toshiba
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET MOSFET MOSFET MOSFET MOSFET
Vdss 75 80 100 80 60 V
Id (Tc) 47 43 67 60 50 A
Rds On (Max) @ 10V 11.3 @ 30A 9.2 @ 20A 4.5 @ 67A 5.7 @ 60A 11.4 @ 8A mOhm
Vgs(th) (Max) 4 @ 250µA 3.4 @ 250µA 4 @ 250µA 3.5 @ 90µA 2.5 @ 300µA V
Gate Charge (Qg) @ 10V 60 38 74 69 28.4 nC
Vgs (Max) ±20 ±20 ±20 ±20 ±20 V
Ciss (Max) 3370 @ 30V 1871 @ 40V 5270 @ 50V 4750 @ 40V 1990 @ 25V pF
Power Dissipation (Tc) 57.5 35.5 43 39 36 W
Operating Temperature -55 to 175 -55 to 175 -55 to 175 -55 to 175 to 175 °C
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active Active Active
RoHS Status Not Specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

AOTF288L (Alpha & Omega Semiconductor Inc.)

The AOTF288L is an active product offering 80V Vdss with 43A continuous drain current at Tc, meeting the minimum voltage and current requirements of the AOTF474. This part features improved Rds On characteristics (9.2 mOhm vs. 11.3 mOhm) and lower gate charge (38 nC vs. 60 nC), resulting in reduced switching losses. ROHS3 compliance and REACH Unaffected status support regulatory requirements. Inventory availability of 3200 units provides supply continuity.

FDPF045N10A (onsemi)

The FDPF045N10A is an active product with 100V Vdss and 67A continuous drain current at Tc, exceeding AOTF474 specifications. This PowerTrench® series device delivers superior Rds On performance (4.5 mOhm @ 67A) and higher current capacity. ROHS3 compliance and 6058 units in stock support production requirements. Higher gate charge (74 nC) and input capacitance (5270 pF) require circuit evaluation for switching speed compatibility.

IPA057N08N3GXKSA1 (Infineon Technologies)

The IPA057N08N3GXKSA1 is an active OptiMOS™ series product with 80V Vdss and 60A continuous drain current at Tc. This device provides balanced performance with 5.7 mOhm Rds On and 69 nC gate charge. ROHS3 compliance and 1250 units in stock support design transitions. The PG-TO220-FP package maintains TO-220-3 Full Pack compatibility.

TK8R2A06PL,S4X (Toshiba Semiconductor and Storage)

The TK8R2A06PL,S4X is an active U-MOSIX-H series product with 60V Vdss and 50A continuous drain current at Tc. This device features the lowest gate charge (28.4 nC) and input capacitance (1990 pF) among substitute options, supporting high-frequency switching applications. ROHS3 compliance and 1090 units in stock provide availability. Lower Vdss rating (60V) requires circuit voltage margin verification.

All substitute parts maintain Through Hole TO-220-3 Full Pack configuration, ±20V gate voltage rating, and -55°C to 175°C operating temperature range. Product status is Active for all substitutes, ensuring long-term availability and design support compared to the Obsolete AOTF474.

Frequently Asked Questions (FAQ)

Q: Can the AOTF474 be directly replaced with any of these substitute parts?

A: Direct replacement requires verification of three criteria: (1) Drain-to-source voltage (Vdss) must equal or exceed 75V; (2) Continuous drain current at Tc must support minimum 47A; (3) TO-220-3 Full Pack package configuration must match PCB layout. All listed substitutes satisfy these requirements. Circuit-level evaluation of switching characteristics and thermal performance is necessary for specific applications.

Q: What is the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current at ambient temperature (typically 25°C with device self-heating), while Tc represents continuous drain current at case temperature (typically 25°C with external heat sink). Tc ratings are higher due to improved thermal management. Application thermal design determines which rating applies.

Q: Why does the FDPF045N10A have lower Rds On than the AOTF474?

A: Rds On (on-resistance) is a function of die size, process technology, and voltage rating. The FDPF045N10A features a larger die and advanced PowerTrench® technology, resulting in lower on-resistance (4.5 mOhm vs. 11.3 mOhm). Lower Rds On reduces conduction losses and heat generation in high-current applications.

Q: What is gate charge and why does it matter?

A: Gate charge (Qg) is the total charge required to switch the MOSFET from off to on state. Lower gate charge (TK8R2A06PL,S4X at 28.4 nC) enables faster switching and reduced driver power consumption compared to higher gate charge devices (FDPF045N10A at 74 nC). Driver circuit capability must support the selected device's gate charge requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute parts carry ROHS3 Compliant certification. The AOTF474 does not specify RoHS status. All substitutes and the original part maintain REACH Unaffected status.

Q: Can I use the TK8R2A06PL,S4X if my circuit operates at 75V?

A: The TK8R2A06PL,S4X has a 60V Vdss rating, which is below the 75V circuit voltage. This device is not suitable for 75V operation. Use AOTF288L, FDPF045N10A, or IPA057N08N3GXKSA1, all rated for 80V or higher.

Q: What is the difference between TO-220F and TO-220FL packaging?

A: Both are Through Hole TO-220-3 Full Pack configurations with identical pin layouts and PCB footprints. The designation difference reflects internal lead frame design variations between manufacturers. Electrical and mechanical compatibility for PCB mounting is maintained across all listed parts.

Q: Which substitute offers the best thermal performance?

A: The FDPF045N10A delivers the highest power dissipation capability at Tc (43W) and lowest Rds On (4.5 mOhm @ 67A), resulting in minimal heat generation during high-current operation. The AOTF288L and IPA057N08N3GXKSA1 provide balanced thermal performance at 35.5W and 39W respectively.

Q: Do all substitutes support ±20V gate voltage?

A: Yes. All substitute parts and the original AOTF474 support ±20V maximum gate voltage (Vgs Max), ensuring compatibility with standard gate driver circuits.

Q: What inventory status should I consider for production planning?

A: AOTF288L has 3200 units in stock, FDPF045N10A has 6058 units, IPA057N08N3GXKSA1 has 1250 units, and TK8R2A06PL,S4X has 1090 units. The AOTF474 is Obsolete with 17400 units remaining. For long-term production, select from active products with established supply chains.

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