AOT7N60 N-Channel 600V 7A MOSFET Equivalent & Substitute Parts

Part Overview

The AOT7N60 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 600V drain-to-source voltage with 7A continuous drain current in a TO-220 through-hole package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support existing applications requiring this component specification.

Substiute Parts

AOT7N60
Alpha & Omega Semiconductor Inc.In Stock: 2372AOT7N60 Datasheet
AOT7N60
Current Part
CDM22010-650 SL
Central Semiconductor CorpIn Stock: 1434CDM22010-650 SL Datasheet
CDM22010-650 SL
MFR Recommended
FCP4N60
Fairchild SemiconductorIn Stock: 3103FCP4N60 Datasheet
FCP4N60
MFR Recommended
IXFP10N80P
IXYSIn Stock: 1036IXFP10N80P Datasheet
IXFP10N80P
MFR Recommended
STP6N60M2
STMicroelectronicsIn Stock: 1320STP6N60M2 Datasheet
STP6N60M2
MFR Recommended
STP6N62K3
STMicroelectronicsIn Stock: 8440STP6N62K3 Datasheet
STP6N62K3
MFR Recommended
STP7N60M2
STMicroelectronicsIn Stock: 15482STP7N60M2 Datasheet
STP7N60M2
MFR Recommended
STP8N80K5
STMicroelectronicsIn Stock: 135323STP8N80K5 Datasheet
STP8N80K5
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 7 A (Tc)
On-State Resistance (Rds On) @ Id, Vgs 1.2 Ω @ 3.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4.5 V @ 250µA
Power Dissipation (Max) 192 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-220-3 Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the AOT7N60 is determined by the following critical parameters:

Primary Substitution Criteria:

  • FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
  • Drain-to-Source Voltage (Vdss): Minimum 600V (equal or higher voltage rating acceptable)
  • Continuous Drain Current (Id): Minimum 7A at 25°C (equal or higher current rating acceptable)
  • Package Type: TO-220-3 through-hole configuration
  • Operating Temperature Range: -55°C to 150°C (TJ)

Secondary Compatibility Factors:

  • On-State Resistance (Rds On): Lower or equal values preferred for thermal performance
  • Gate Threshold Voltage (Vgs(th)): Within ±30V gate voltage specification
  • Power Dissipation: Adequate thermal handling at rated conditions
  • Compliance: ROHS3 compliance and EAR99 classification maintained

Substitute parts are grouped into two categories: Direct Equivalents (matching voltage and current ratings) and Enhanced Alternatives (higher voltage or current ratings within the same package).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (Ω) Power Dissipation (W) Product Status Package
AOT7N60 Alpha & Omega Semiconductor 600 7 1.2 @ 3.5A, 10V 192 (Tc) Not For New Designs TO-220-3
STP7N60M2 STMicroelectronics 600 5 0.95 @ 2.5A, 10V 60 (Tc) Active TO-220-3
STP6N60M2 STMicroelectronics 600 4.5 1.2 @ 2.25A, 10V 60 (Tc) Active TO-220-3
STP6N62K3 STMicroelectronics 620 5.5 1.2 @ 2.8A, 10V 90 (Tc) Active TO-220-3
FCP4N60 Fairchild Semiconductor 600 3.9 1.2 @ 2A, 10V 50 (Tc) Active TO-220-3
CDM22010-650 SL Central Semiconductor Corp 650 10 1 @ 5A, 10V 156 (Tc) Obsolete TO-220-3
STP8N80K5 STMicroelectronics 800 6 0.95 @ 3A, 10V 110 (Tc) Active TO-220-3
IXFP10N80P IXYS 800 10 1.1 @ 5A, 10V 300 (Tc) Active TO-220-3

Engineering Selection Recommendations

Direct Voltage and Current Match (600V, ≥7A):

The AOT7N60 specification requires a minimum 600V Vdss and 7A continuous drain current. No substitute parts in the provided list maintain both the exact 600V voltage rating and equal or higher 7A current rating simultaneously. The closest match by voltage is the STP7N60M2 (600V, 5A), which meets the voltage requirement but falls short on current capacity by 2A.

Enhanced Alternatives with Higher Voltage Rating (≥600V):

For applications where higher voltage margin is acceptable, the STP6N62K3 (620V, 5.5A) and STP8N80K5 (800V, 6A) provide improved voltage headroom. The STP8N80K5 offers the highest voltage rating (800V) with 6A current capacity and is actively manufactured by STMicroelectronics with ROHS3 compliance.

Current Capacity Considerations:

The CDM22010-650 SL (650V, 10A) and IXFP10N80P (800V, 10A) exceed the 7A current requirement. However, the CDM22010-650 SL is classified as Obsolete, limiting its long-term availability. The IXFP10N80P is actively produced and provides 10A capacity with 800V rating, suitable for applications requiring current margin.

Product Status and Compliance:

All recommended active substitutes maintain ROHS3 compliance and EAR99 classification. The STMicroelectronics parts (STP7N60M2, STP6N60M2, STP6N62K3, STP8N80K5) are actively manufactured with established supply chains. The IXFP10N80P from IXYS is also active and provides enhanced thermal performance (300W dissipation).

Thermal Performance:

The AOT7N60 is rated for 192W power dissipation. The STP7N60M2 and STP6N60M2 are rated for 60W, which is lower. The STP6N62K3 provides 90W, and the STP8N80K5 provides 110W. For applications requiring the full 192W dissipation capability, the IXFP10N80P (300W) or CDM22010-650 SL (156W) are more suitable, though thermal management design must be verified.

Frequently Asked Questions (FAQ)

Q: Can I directly replace the AOT7N60 with any of the listed substitutes?

A: Direct replacement depends on your application's current and voltage requirements. If your circuit operates at or below 5A continuous drain current and 600V, the STP7N60M2 is a suitable direct replacement. For applications requiring the full 7A specification, the CDM22010-650 SL (10A) or IXFP10N80P (10A) are necessary, though they operate at higher voltage ratings (650V and 800V respectively).

Q: What is the difference between the AOT7N60 and STP7N60M2?

A: Both devices share the same 600V Vdss rating and TO-220-3 package. The primary differences are: STP7N60M2 has 5A continuous drain current (versus 7A), lower on-state resistance (0.95Ω versus 1.2Ω), and lower power dissipation (60W versus 192W). The STP7N60M2 is actively manufactured, whereas the AOT7N60 is not for new designs.

Q: Why do some substitutes have higher voltage ratings (800V) than the original (600V)?

A: Higher voltage-rated devices provide additional safety margin in applications subject to voltage transients or overshoot conditions. They are electrically compatible with 600V circuits and can be used as drop-in replacements. The higher voltage rating does not negatively impact circuit operation at 600V.

Q: Is the CDM22010-650 SL a viable substitute despite being Obsolete?

A: The CDM22010-650 SL meets the electrical specifications (650V, 10A) and package requirements (TO-220-3). However, its Obsolete status indicates limited future availability and potential supply chain discontinuation. It is suitable for immediate replacement needs but not recommended for new designs or long-term production.

Q: What does "Not For New Designs" mean for the AOT7N60?

A: This status indicates the AOT7N60 has reached end-of-life and the manufacturer is not recommending it for new circuit designs. Existing applications may continue to use available inventory, but new designs should select from actively manufactured alternatives such as the STP7N60M2, STP6N62K3, or IXFP10N80P.

Q: Are all substitutes ROHS3 compliant?

A: Yes, all listed substitute parts are ROHS3 compliant and maintain EAR99 classification, matching the compliance profile of the original AOT7N60.

Q: Can I use the IXFP10N80P in place of the AOT7N60 in a 600V application?

A: Yes. The IXFP10N80P is rated for 800V Vdss and 10A continuous drain current, both exceeding the AOT7N60 specifications. It is electrically compatible with 600V circuits and provides enhanced current capacity and thermal performance (300W dissipation). The TO-220-3 package is identical.

Q: What is the significance of the Rds On (on-state resistance) parameter in substitution?

A: Lower on-state resistance reduces power dissipation and heat generation during operation. The STP7N60M2 (0.95Ω) and STP8N80K5 (0.95Ω) have lower Rds On than the AOT7N60 (1.2Ω), resulting in improved efficiency. This is beneficial for thermal management in high-current applications.

Q: Are there any gate voltage (Vgs) compatibility issues between the AOT7N60 and substitutes?

A: No. The AOT7N60 specifies ±30V maximum gate voltage. All listed substitutes operate within this range or lower (±25V for some STMicroelectronics parts), ensuring gate drive circuit compatibility.

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