AOT5N60 N-Channel MOSFET 600V 5A TO-220 Equivalent & Substitute Parts

Part Overview

The AOT5N60 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 600V drain-to-source voltage with 5A continuous drain current in a TO-220 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement.

The AOT5N60 operates across a temperature range of -55°C to 150°C and dissipates up to 132W at the case temperature. Its primary application domain includes switching circuits requiring moderate voltage and current ratings with through-hole mounting compatibility.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	5	A
On-State Resistance (Rds On) @ 2.5A, 10V	1.8	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Gate Charge (Qg) @ 10V	20	nC
Input Capacitance (Ciss) @ 25V	700	pF
Power Dissipation (Max)	132	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the AOT5N60 is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package: TO-220-3 through-hole configuration
Drain-to-Source Voltage (Vdss): 600V or higher
Continuous Drain Current (Id): 5A or higher at 25°C
Gate Drive Voltage: 10V
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values ensure comparable switching performance
Gate Charge (Qg): Lower values reduce gate drive requirements
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation: Higher ratings provide thermal margin

The substitute parts listed below meet or exceed the primary criteria, ensuring functional compatibility in applications designed for the AOT5N60. Variations in secondary parameters reflect different semiconductor technologies and design approaches while maintaining electrical interchangeability.

Parameter Comparison

Parameter	AOT5N60	STP5NK60Z	IXFP7N80PM	STP7NK80Z	Unit
Manufacturer	Alpha & Omega Semiconductor	STMicroelectronics	IXYS	STMicroelectronics	—
Drain-to-Source Voltage (Vdss)	600	600	800	800	V
Continuous Drain Current (Id) @ 25°C	5	5	3.5	5.2	A
On-State Resistance (Rds On)	1.8 @ 2.5A, 10V	1.6 @ 2.5A, 10V	1.44 @ 3.5A, 10V	1.8 @ 2.6A, 10V	Ohm
Gate Threshold Voltage (Vgs(th))	4.5 @ 250µA	4.5 @ 50µA	5 @ 1mA	4.5 @ 100µA	V
Gate Charge (Qg) @ 10V	20	34	32	56	nC
Input Capacitance (Ciss) @ 25V	700	690	1890	1138	pF
Power Dissipation (Max)	132	90	50	125	W
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	Active	Active	—
RoHS Status	Not specified	ROHS3 Compliant	Not specified	ROHS3 Compliant	—

Engineering Selection Recommendations

STP5NK60Z (STMicroelectronics)

The STP5NK60Z is the closest functional equivalent to the AOT5N60. Both devices share identical voltage and current ratings (600V, 5A), matching package configuration (TO-220-3), and operating temperature range (-55°C to 150°C). The STP5NK60Z features improved on-state resistance (1.6Ohm versus 1.8Ohm) and maintains comparable input capacitance (690pF versus 700pF). This device is actively manufactured and RoHS3 compliant, providing long-term supply assurance and regulatory compliance. The STP5NK60Z is the primary recommendation for direct replacement in existing AOT5N60 designs.

STP7NK80Z (STMicroelectronics)

The STP7NK80Z offers higher voltage rating (800V versus 600V) and marginally higher current capability (5.2A versus 5A). This device provides enhanced voltage margin for applications subject to transient overvoltage conditions. The STP7NK80Z is actively manufactured, RoHS3 compliant, and maintains the same TO-220-3 package and operating temperature range. Selection of this device is appropriate when circuit design permits higher voltage operation or when additional voltage headroom is required for reliability.

IXFP7N80PM (IXYS)

The IXFP7N80PM operates at 800V with 3.5A continuous drain current, representing a higher voltage but lower current alternative. This device exhibits superior on-state resistance (1.44Ohm) and lower gate charge (32nC), resulting in improved switching efficiency. However, the reduced current rating (3.5A versus 5A) and significantly higher input capacitance (1890pF versus 700pF) require circuit evaluation. The IXFP7N80PM is actively manufactured and maintains TO-220-3 package compatibility. This device is suitable for applications where current requirements do not exceed 3.5A and where improved switching characteristics provide system-level benefits.

All substitute devices maintain through-hole TO-220-3 mounting compatibility, identical gate drive voltage (10V), and matching operating temperature range (-55°C to 150°C), ensuring mechanical and thermal interchangeability with the obsolete AOT5N60.

Frequently Asked Questions (FAQ)

Q: Can the STP5NK60Z directly replace the AOT5N60 in existing circuit boards?

A: Yes. The STP5NK60Z and AOT5N60 share identical electrical ratings (600V, 5A), gate drive voltage (10V), operating temperature range (-55°C to 150°C), and TO-220-3 package configuration. Pin-to-pin compatibility is maintained. The STP5NK60Z exhibits improved on-state resistance, providing enhanced performance without circuit modification.

Q: What is the difference between the 600V and 800V substitute options?

A: The STP5NK60Z maintains the original 600V rating, while STP7NK80Z and IXFP7N80PM operate at 800V. Higher voltage rating provides additional margin against transient overvoltage but does not affect normal circuit operation at 600V. Selection depends on circuit design requirements and available voltage headroom.

Q: Why does the IXFP7N80PM have lower current rating (3.5A) than the AOT5N60 (5A)?

A: The IXFP7N80PM is designed for different application requirements, featuring higher voltage operation (800V) and improved switching characteristics. The 3.5A rating is sufficient for applications not requiring the full 5A capability. Circuit evaluation is necessary to confirm current requirements before selection.

Q: Are all substitute parts RoHS compliant?

A: The STP5NK60Z and STP7NK80Z are explicitly RoHS3 compliant. The IXFP7N80PM RoHS status is not specified in the provided data. Compliance verification with the IXYS component datasheet is required for applications with RoHS requirements.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The AOT5N60 requires 20nC, while substitutes range from 32nC to 56nC. Higher gate charge increases gate drive power consumption and may extend switching time. Existing gate drive circuits designed for the AOT5N60 accommodate these variations within standard design margins.

Q: What is the significance of input capacitance (Ciss) variation?

A: Input capacitance affects switching speed and gate drive requirements. The AOT5N60 has 700pF input capacitance. The STP5NK60Z (690pF) is nearly identical. The IXFP7N80PM (1890pF) and STP7NK80Z (1138pF) exhibit higher capacitance, requiring slightly more gate drive energy but remaining compatible with standard gate driver circuits.

Q: Can I use a higher-rated device in a circuit designed for the AOT5N60?

A: Yes. Devices with equal or higher voltage ratings (Vdss), equal or higher current ratings (Id), and compatible packages are electrically interchangeable. Higher ratings provide additional design margin without affecting circuit operation. Thermal management must accommodate any changes in power dissipation characteristics.

Q: What inventory status should influence my selection?

A: The STP5NK60Z has the highest inventory (10,200 pcs), followed by STP7NK80Z (3,451 pcs) and IXFP7N80PM (1,230 pcs). Inventory levels support long-term supply continuity. All three devices are actively manufactured, ensuring future availability independent of current stock levels.

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