AOT502 Equivalent & Substitute Parts

Part Overview

The AOT502 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 33V drain-to-source voltage with continuous drain current of 9A at Ta and 60A at Tc in a Through Hole TO-220 package. The device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while offering active product status and improved availability.

Substiute Parts

AOT502
Alpha & Omega Semiconductor Inc.In Stock: 2177AOT502 Datasheet
AOT502
Current Part
FDP5800
onsemiIn Stock: 1517FDP5800 Datasheet
FDP5800
MFR Recommended
STP70NS04ZC
STMicroelectronicsIn Stock: 8301STP70NS04ZC Datasheet
STP70NS04ZC
MFR Recommended

Key Parameters

Parameter AOT502 Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 33 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 60A (Tc) A
Rds On (Max) @ Id, Vgs 11.5 mOhm @ 30A, 10V mOhm
Vgs(th) (Max) @ Id 2.7 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 28 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 1450 @ 15V pF
Power Dissipation (Max) 1.9W (Ta), 79W (Tc) W
Operating Temperature -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitute parts for the AOT502 are selected based on the following critical parameters that determine functional compatibility:

Electrical Compatibility Criteria:

  • FET Type: N-Channel topology must be maintained
  • Technology: MOSFET (Metal Oxide) construction required
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 33V rating
  • Continuous Drain Current (Id): Substitute must support minimum 9A at Ta and 60A at Tc
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Operating Temperature Range: Must encompass -55°C to 175°C (TJ)

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole required
  • Package / Case: TO-220-3 form factor required for direct pin compatibility

Regulatory & Compliance Criteria:

  • REACH Status: REACH Unaffected designation maintained
  • ECCN: EAR99 classification maintained

The substitute parts listed below satisfy all mandatory electrical and mechanical parameters while offering active product status and improved market availability compared to the obsolete AOT502.

Parameter Comparison

Parameter AOT502 FDP5800 STP70NS04ZC Unit
Manufacturer Alpha & Omega Semiconductor Inc. onsemi STMicroelectronics
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 33 60 33 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 60A (Tc) 14A (Ta), 80A (Tc) 80A (Tc) A
Drive Voltage (Max Rds On) 10 4.5, 10 10 V
Rds On (Max) @ Id, Vgs 11.5 @ 30A, 10V 6 @ 80A, 10V 11 @ 40A, 10V mOhm
Vgs(th) (Max) @ Id 2.7 @ 250µA 2.5 @ 250µA 4 @ 1mA V
Gate Charge (Qg) (Max) @ Vgs 28 @ 10V 145 @ 10V 58 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 1450 @ 15V 9160 @ 15V 1930 @ 25V pF
Power Dissipation (Max) 1.9W (Ta), 79W (Tc) 242W (Tc) 180W (Tc) W
Operating Temperature -55 to 175 -55 to 175 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

FDP5800 (onsemi): The FDP5800 is an active product with Vdss rating of 60V, exceeding the AOT502 requirement of 33V. Continuous drain current capability is 14A (Ta) and 80A (Tc), both exceeding AOT502 specifications. On-state resistance is 6 mOhm at 80A and 10V, providing improved performance over the AOT502 at 11.5 mOhm. The device is RoHS3 Compliant and REACH Unaffected. Gate charge is elevated at 145 nC compared to 28 nC for the AOT502, and input capacitance is significantly higher at 9160 pF. The FDP5800 is suitable for applications requiring higher voltage headroom and current capacity with active product support.

STP70NS04ZC (STMicroelectronics): The STP70NS04ZC is an active product with Vdss rating of 33V, matching the AOT502 specification exactly. Continuous drain current capability is 80A (Tc), substantially exceeding the AOT502 at 60A (Tc). On-state resistance is 11 mOhm at 40A and 10V, comparable to the AOT502 at 11.5 mOhm. The device is RoHS3 Compliant and REACH Unaffected. Gate charge is 58 nC at 10V, approximately double the AOT502 value. Input capacitance is 1930 pF at 25V, slightly elevated from the AOT502 at 1450 pF at 15V. The STP70NS04ZC provides the closest voltage rating match with improved current capacity and active product status.

Both substitute parts maintain TO-220-3 package compatibility, Through Hole mounting, and the full operating temperature range of -55°C to 175°C (TJ). Selection between FDP5800 and STP70NS04ZC depends on application voltage requirements and current demands.

Frequently Asked Questions (FAQ)

Q: Can the FDP5800 be used as a direct replacement for the AOT502?

A: The FDP5800 is electrically compatible with the AOT502 in applications where the 33V voltage rating of the AOT502 is the design constraint. The FDP5800 provides higher voltage capability (60V Vdss) and improved current handling (80A Tc vs. 60A Tc). However, the elevated gate charge (145 nC vs. 28 nC) and input capacitance (9160 pF vs. 1450 pF) may affect switching speed and gate drive requirements. Pin configuration and TO-220-3 package are identical, enabling direct mechanical substitution.

Q: Can the STP70NS04ZC be used as a direct replacement for the AOT502?

A: The STP70NS04ZC is electrically compatible with the AOT502 and provides an exact Vdss match at 33V. Current capacity is substantially improved at 80A (Tc) compared to 60A (Tc) for the AOT502. On-state resistance is comparable at 11 mOhm versus 11.5 mOhm. Gate charge is elevated at 58 nC versus 28 nC, and input capacitance is slightly higher at 1930 pF versus 1450 pF. Pin configuration and TO-220-3 package are identical, enabling direct mechanical substitution.

Q: What are the key differences between the FDP5800 and STP70NS04ZC?

A: The primary difference is Vdss rating: FDP5800 is rated for 60V while STP70NS04ZC is rated for 33V. For applications operating at or below 33V, the STP70NS04ZC provides a closer electrical match to the AOT502. The FDP5800 is suitable for applications requiring higher voltage margins. Both devices exceed the AOT502 current capacity and maintain compatible package and thermal characteristics.

Q: Are there any compliance or regulatory differences between the substitute parts?

A: Both substitute parts maintain REACH Unaffected status and EAR99 ECCN classification, matching the AOT502. The FDP5800 is RoHS3 Compliant, and the STP70NS04ZC is RoHS3 Compliant. Both devices have MSL ratings suitable for standard handling and storage. No additional compliance considerations apply to substitution.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The AOT502 has 28 nC at 10V, while the FDP5800 has 145 nC and the STP70NS04ZC has 58 nC. Higher gate charge requires increased gate drive current or extended switching time. Circuit designs must accommodate the gate charge specifications of the selected substitute part to maintain switching performance and efficiency.

Q: Are the substitute parts available in the same packaging options?

A: Both substitute parts are supplied in TO-220-3 Through Hole packages, identical to the AOT502. The FDP5800 is supplied in Tube packaging, and the STP70NS04ZC is supplied in Tube packaging. Pin configuration and mechanical dimensions are compatible for direct board-level substitution.

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