AOT460 N-Channel MOSFET 60V 85A TO-220 Equivalent & Substitute Parts

Part Overview

The AOT460 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 60V drain-to-source voltage with 85A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and is designed for high-current switching applications. The AOT460 is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	85	A (Tc)
On-State Resistance (Rds On) @ 30A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	88	nC
Input Capacitance (Ciss) @ 30V	4560	pF
Power Dissipation (Max)	268	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the AOT460 is determined by the following critical parameters:

Mandatory Matching Parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss): 60V minimum
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 175°C

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): 85A or greater at 25°C
On-State Resistance (Rds On): 7.5 mOhm or lower at rated conditions
Gate Threshold Voltage (Vgs(th)): 4V or lower for compatible gate drive circuits
Power Dissipation: 268W or greater thermal capability

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents: Parts meeting or exceeding all mandatory and performance parameters with Vdss at 60V and Id at or above 85A.

Category B - Compatible Alternatives: Parts with Vdss at 60V and Id between 72A and 100A, suitable for applications where the exact 85A specification is not critical but thermal and electrical performance remain within acceptable operating margins.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Product Status	Package
AOT460	Alpha & Omega Semiconductor	60	85 (Tc)	7.5 @ 30A, 10V	4 @ 250µA	88 @ 10V	268 (Tc)	Obsolete	TO-220-3
AOT2606L	Alpha & Omega Semiconductor	60	72 (Tc)	6.5 @ 20A, 10V	3.5 @ 250µA	75 @ 10V	115 (Tc)	Active	TO-220-3
CSD18533KCS	Texas Instruments	60	100 (Tc)	6.3 @ 75A, 10V	2.3 @ 250µA	34 @ 10V	192 (Tc)	Active	TO-220-3
DMTH6005LCT	Diodes Incorporated	60	100 (Tc)	6 @ 20A, 10V	3 @ 250µA	47.1 @ 10V	125 (Tc)	Active	TO-220-3
FDP060AN08A0	onsemi	75	80 (Tc)	6 @ 80A, 10V	4 @ 250µA	95 @ 10V	255 (Tc)	Active	TO-220-3
FDP070AN06A0	Fairchild Semiconductor	60	80 (Tc)	7 @ 80A, 10V	4 @ 250µA	66 @ 10V	175 (Tc)	Active	TO-220-3
FDP5800	onsemi	60	80 (Tc)	6 @ 80A, 10V	2.5 @ 250µA	145 @ 10V	242 (Tc)	Active	TO-220-3
HUF75345P3	onsemi	55	75 (Tc)	7 @ 75A, 10V	4 @ 250µA	275 @ 20V	325 (Tc)	Active	TO-220-3
IPP057N06N3GXKSA1	Infineon Technologies	60	80 (Tc)	5.7 @ 80A, 10V	4 @ 58µA	82 @ 10V	115 (Tc)	Not For New Designs	TO-220-3
IRF1018EPBF	Infineon Technologies	60	79 (Tc)	8.4 @ 47A, 10V	4 @ 100µA	69 @ 10V	110 (Tc)	Active	TO-220-3
IRF1405PBF	Infineon Technologies	55	169 (Tc)	5.3 @ 101A, 10V	4 @ 250µA	260 @ 10V	330 (Tc)	Active	TO-220-3

Engineering Selection Recommendations

Primary Substitutes (Active Product Status, 60V Vdss):

The CSD18533KCS (Texas Instruments NexFET™ series) and DMTH6005LCT (Diodes Incorporated) are the preferred substitutes for the AOT460. Both devices operate at 60V with continuous drain current ratings of 100A at 25°C, exceeding the AOT460 specification of 85A. Both parts are in active production status and carry ROHS3 compliance. The CSD18533KCS features lower gate charge (34 nC) and lower on-state resistance (6.3 mOhm), providing improved switching efficiency. The DMTH6005LCT carries AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade reliability.

Secondary Substitutes (Active Product Status, 60V Vdss, 80A Rating):

The FDP070AN06A0 (Fairchild Semiconductor PowerTrench®), FDP5800 (onsemi PowerTrench®), and IRF1018EPBF (Infineon Technologies HEXFET®) are suitable alternatives where the 85A specification can be relaxed to 80A continuous drain current. All three devices maintain 60V Vdss rating and are in active production. The FDP5800 offers the lowest gate threshold voltage (2.5V), facilitating lower gate drive voltage requirements. The IRF1018EPBF provides compatibility with existing HEXFET® design ecosystems.

Alternative Voltage Rating (55V Vdss):

The HUF75345P3 (onsemi UltraFET™) and IRF1405PBF (Infineon Technologies HEXFET®) operate at 55V Vdss, which is 5V lower than the AOT460. These parts are suitable only for applications where the circuit design accommodates the reduced voltage margin. The IRF1405PBF provides exceptional current handling at 169A, suitable for high-current applications with reduced voltage headroom.

Not Recommended for New Designs:

The IPP057N06N3GXKSA1 (Infineon Technologies OptiMOS™) carries a "Not For New Designs" product status and should not be selected for new circuit implementations, despite meeting electrical specifications.

Compliance and Certifications:

All recommended substitutes carry ROHS3 compliance and REACH unaffected status, matching the AOT460 environmental compliance profile. The DMTH6005LCT additionally carries AEC-Q101 automotive qualification for applications requiring automotive-grade components.

Frequently Asked Questions (FAQ)

Q: Can the CSD18533KCS directly replace the AOT460 without circuit modifications?

A: The CSD18533KCS is electrically compatible with the AOT460 in terms of voltage rating (60V), package type (TO-220-3), and thermal operating range (-55°C to 175°C). The higher continuous drain current rating (100A vs. 85A) and lower gate charge (34 nC vs. 88 nC) provide improved performance margins. No circuit modifications are required for basic substitution, though gate drive optimization may improve switching efficiency.

Q: What is the significance of the lower gate threshold voltage in the FDP5800 (2.5V vs. 4V)?

A: The gate threshold voltage (Vgs(th)) determines the minimum gate-to-source voltage required to turn the device on. The FDP5800's lower threshold voltage (2.5V) allows operation with lower gate drive voltages compared to the AOT460 (4V). This is advantageous in applications with limited gate drive capability or where reduced power consumption in the gate drive circuit is desired.

Q: Why is the IRF1405PBF listed as a substitute despite its 55V Vdss rating versus the AOT460's 60V?

A: The IRF1405PBF is included as an alternative for applications where the circuit design accommodates a 55V maximum drain-to-source voltage. The 5V reduction in voltage rating represents a 8.3% margin reduction. This part is suitable only for circuits where the maximum transient voltage does not exceed 55V. Applications requiring the full 60V rating should select alternatives with matching voltage specifications.

Q: What does "Not For New Designs" status mean for the IPP057N06N3GXKSA1?

A: "Not For New Designs" indicates that the manufacturer (Infineon Technologies) has discontinued active development and marketing of this part for new applications. While the part may remain available in inventory, it is not recommended for incorporation into new circuit designs. Existing designs using this part may continue to source it during its remaining availability window, but new designs should select from active product status alternatives.

Q: How do I determine which substitute is best for my application?

A: Selection depends on three primary factors: (1) Voltage requirement—select parts with Vdss at 60V for direct compatibility, or 55V if circuit design permits; (2) Current requirement—the AOT460 specification of 85A can be met by parts rated 80A or higher; (3) Product status—prioritize active production parts for long-term availability. Secondary considerations include gate charge (lower values reduce switching losses), on-state resistance (lower values reduce conduction losses), and specific certifications such as AEC-Q101 for automotive applications.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes, all substitute parts listed are housed in TO-220-3 through-hole packages, ensuring mechanical and thermal interface compatibility with the AOT460. Pin configuration and lead spacing are identical across all listed alternatives, allowing direct socket substitution without PCB modifications.

Q: What is the impact of different gate charge specifications on circuit performance?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. Lower gate charge values (such as the CSD18533KCS at 34 nC) reduce the energy required from the gate drive circuit and decrease switching time, resulting in lower switching losses. Higher gate charge values (such as the HUF75345P3 at 275 nC) require more gate drive energy but may provide improved noise immunity in certain applications. Selection should align with gate drive circuit capability and application switching frequency requirements.

Q: Can I use the DMTH6005LCT in automotive applications?

A: Yes, the DMTH6005LCT carries AEC-Q101 automotive qualification, making it suitable for automotive applications. This qualification indicates compliance with automotive reliability and quality standards. Other substitutes without explicit automotive qualification may still be used in automotive applications if the circuit design does not require AEC-Q101 certification.

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