AOT418L N-Channel 100V 9.5A/105A TO-220 MOSFET Equivalent & Substitute Parts

Part Overview

The AOT418L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with continuous drain current of 9.5A at Ta and 105A at Tc. This device is packaged in TO-220-3 configuration for through-hole mounting applications. The AOT418L is classified as obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts listed herein maintain electrical and mechanical compatibility within specified parameter tolerances.

Key Parameters

Parameter	AOT418L Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	9.5A (Ta), 105A (Tc)	A
Rds On (Max) @ Id, Vgs	10 mOhm @ 20A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	3.9V @ 250µA	V
Gate Charge (Qg) @ Vgs	83 nC @ 10V	nC
Input Capacitance (Ciss) @ Vds	5200 pF @ 50V	pF
Power Dissipation (Max)	2.1W (Ta), 333W (Tc)	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the AOT418L are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

FET Type: N-Channel (all substitutes)
Drain to Source Voltage (Vdss): 100V (all substitutes maintain this rating)
Package/Mounting: TO-220-3 through-hole configuration (all substitutes)
Operating Temperature Range: -55°C to 175°C (all substitutes)
Technology: MOSFET (Metal Oxide Semiconductor)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitutes rated 70A to 100A at Tc maintain or exceed the 105A Tc rating of the AOT418L
Rds On (Max): Substitutes range from 8.3 mOhm to 10.5 mOhm, compatible with the 10 mOhm specification
Gate Threshold Voltage (Vgs(th)): Substitutes range from 3.4V to 4.5V, compatible with the 3.9V specification
Gate Charge (Qg): Substitutes range from 35 nC to 235 nC; lower values indicate improved switching performance
Input Capacitance (Ciss): Substitutes range from 2670 pF to 8225 pF

Compliance Matching:

RoHS3 Compliance: All substitute parts maintain ROHS3 compliance
REACH Status: All substitute parts are REACH Unaffected
Moisture Sensitivity Level: All substitute parts rated MSL 1 (Unlimited) or Not Applicable

Substitutes are grouped by manufacturer and product series to facilitate procurement and design validation.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 50V (pF)	Power Diss Tc (W)	Product Status	Package
AOT418L	Alpha & Omega Semiconductor Inc.	100	105	10	3.9	83	5200	333	Obsolete	TO-220-3
AOT296L	Alpha & Omega Semiconductor Inc.	100	70	10	3.4	52	2785	107	Active	TO-220-3
CSD19533KCS	Texas Instruments	100	100	10.5	3.4	35	2670	188	Active	TO-220-3
FDP085N10A-F102	onsemi	100	96	8.5	4	40	2695	188	Active	TO-220-3
FDP090N10	onsemi	100	75	9	4.5	116	8225	208	Active	TO-220-3
FDP100N10	Fairchild Semiconductor	100	75	10	4.5	100	7300	208	Active	TO-220-3
HUF75545P3	Fairchild Semiconductor	80	75	10	4	235	3750	270	Active	TO-220-3
IPP083N10N5AKSA1	Infineon Technologies	100	73	8.3	3.8	37	2730	100	Active	TO-220-3
IPP086N10N3GXKSA1	Infineon Technologies	100	80	8.6	3.5	55	3980	125	Active	TO-220-3
IRFB4410PBF	Infineon Technologies	100	88	10	4	180	5150	200	Active	TO-220-3
IRFB4410ZPBF	Infineon Technologies	100	97	9	4	120	4820	230	Active	TO-220-3

Engineering Selection Recommendations

Primary Substitute (Manufacturer Recommended):

The CSD19533KCS (Texas Instruments NexFET™ series) is the primary recommended substitute. This device maintains 100V Vdss rating, achieves 100A continuous drain current at Tc, and demonstrates superior switching characteristics with 35 nC gate charge and 10.5 mOhm Rds On. The CSD19533KCS holds Active product status with ROHS3 compliance and extensive inventory availability (24,400 pcs). This part directly addresses the obsolescence of the AOT418L while maintaining electrical compatibility.

Secondary Substitutes (Active Status, Full Compliance):

The IRFB4410ZPBF (Infineon HEXFET® series) provides 97A continuous drain current at Tc with 100V Vdss, 9 mOhm Rds On, and Active product status. This device offers the highest inventory availability (105,300 pcs) among all substitutes and maintains full RoHS3 compliance.

The IPP086N10N3GXKSA1 (Infineon OptiMOS™ series) delivers 80A continuous drain current at Tc with 100V Vdss and 8.6 mOhm Rds On. This part features lower gate charge (55 nC) and improved thermal performance (125W Tc) with Active status and ROHS3 compliance.

The FDP085N10A-F102 (onsemi PowerTrench® series) provides 96A continuous drain current at Tc with 100V Vdss and 8.5 mOhm Rds On, delivering superior on-resistance performance. Active product status and ROHS3 compliance are confirmed.

Alternative Substitutes (Voltage Derating Consideration):

The HUF75545P3 (Fairchild UltraFET™ series) operates at 80V Vdss, representing a 20V reduction from the AOT418L specification. This device is suitable only for applications where the maximum operating voltage does not exceed 80V. The part maintains 75A continuous drain current at Tc with Active status and ROHS3 compliance.

Compliance Verification:

All recommended substitutes maintain ROHS3 compliance, REACH Unaffected status, and operating temperature range of -55°C to 175°C, matching the AOT418L specification. All parts are classified as Active product status, ensuring long-term availability and manufacturing support.

Frequently Asked Questions (FAQ)

Q: Can the AOT296L directly replace the AOT418L?

A: The AOT296L is an Active-status substitute from the same manufacturer (Alpha & Omega Semiconductor Inc.). Both devices maintain 100V Vdss and 10 mOhm Rds On specifications. However, the AOT296L is rated for 70A continuous drain current at Tc, compared to the AOT418L's 105A rating. The AOT296L is suitable for applications where continuous drain current does not exceed 70A. Gate charge is reduced to 52 nC, improving switching performance.

Q: What is the primary difference between the CSD19533KCS and IRFB4410ZPBF?

A: Both devices maintain 100V Vdss and deliver high continuous drain current (100A and 97A respectively at Tc). The CSD19533KCS features lower gate charge (35 nC vs. 120 nC) and lower input capacitance (2670 pF vs. 4820 pF), resulting in faster switching transitions. The IRFB4410ZPBF offers higher inventory availability and established market presence in legacy designs. Selection depends on switching frequency requirements and thermal management constraints.

Q: Why is the HUF75545P3 listed as a substitute if it has 80V Vdss instead of 100V?

A: The HUF75545P3 is included as an alternative substitute for applications where the maximum operating voltage does not exceed 80V. This device delivers superior power dissipation capability (270W at Tc) and maintains all other critical parameters including 75A continuous drain current, TO-220-3 packaging, and full compliance certifications. Use of this part requires verification that circuit maximum voltage stress remains below 80V.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed maintain ROHS3 compliance. The AOT418L is also ROHS3 compliant. This ensures compatibility with environmental regulations and procurement requirements across all recommended substitutes.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge directly impacts switching speed and drive circuit requirements. The CSD19533KCS features the lowest gate charge at 35 nC, enabling faster switching transitions and reduced switching losses. The FDP090N10 features the highest gate charge at 116 nC, requiring longer switching times. Selection should consider the drive circuit capability and target switching frequency of the application.

Q: Can I use the IPP083N10N5AKSA1 in high-current applications?

A: The IPP083N10N5AKSA1 is rated for 73A continuous drain current at Tc, which is lower than the AOT418L's 105A rating. This device is suitable for applications where continuous drain current does not exceed 73A. The part offers excellent on-resistance (8.3 mOhm) and low gate charge (37 nC), making it ideal for switching applications with moderate current requirements.

Q: What packaging considerations apply to all substitute parts?

A: All substitute parts maintain TO-220-3 through-hole packaging, ensuring mechanical compatibility with existing PCB layouts and heatsink mounting arrangements. Pin configuration and thermal interface remain consistent across all listed substitutes, allowing direct socket replacement without PCB redesign.

Q: How do I select between multiple substitute options?

A: Selection criteria include: (1) continuous drain current requirement—choose parts rated at or above your application's maximum current; (2) switching frequency—lower gate charge parts (CSD19533KCS, IPP083N10N5AKSA1) suit higher frequencies; (3) thermal management—higher power dissipation ratings (HUF75545P3, FDP090N10) suit high-power applications; (4) inventory availability—IRFB4410ZPBF offers maximum stock; (5) cost and lead time—consult current distributor pricing and availability.

Q: Are there any drive voltage differences I should consider?

A: All substitute parts operate with ±20V maximum gate voltage, except the AOT418L which specifies ±25V. This represents a minor difference; most gate drive circuits operate within ±20V range. Verify your gate drive circuit output voltage does not exceed ±20V when using substitute parts.

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