AOT416 N-Channel MOSFET 100V 4.7A/42A TO-220 Equivalent & Substitute Parts

Part Overview

The AOT416 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 100V drain-to-source voltage with continuous drain current of 4.7A at Ta and 42A at Tc. The device is housed in a TO-220 through-hole package and is part of the SDMOS™ series. The AOT416 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and gate drive specifications while accommodating available packaging options.

Key Parameters

Parameter	AOT416 Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	4.7	A
Continuous Drain Current @ 25°C (Tc)	42	A
Rds On (Max) @ Id, Vgs	37 mOhm @ 20A, 10V	—
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23	nC @ 10V
Vgs (Max)	±25	V
Input Capacitance (Ciss) (Max) @ Vds	1450	pF @ 50V
Power Dissipation (Max) (Ta)	1.92	W
Power Dissipation (Max) (Tc)	150	W
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the AOT416 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 100V
FET Type: Must be N-Channel MOSFET
Mounting Type: Must be Through Hole
Package / Case: Must be TO-220-3 or compatible TO-220 variant
Operating Temperature Range: Must span -55°C to 175°C (TJ)

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 4.7A (Ta) and 42A (Tc)
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit complexity
Vgs(th): Must be compatible with existing gate drive circuits
Input Capacitance (Ciss): Affects switching speed and drive requirements

The substitute parts listed below satisfy all primary criteria and maintain electrical compatibility within the specified parameter ranges. Substitutes are grouped by product status (Active vs. Obsolete) and manufacturer to facilitate procurement decisions.

Parameter Comparison

Parameter	AOT416	AOTF2916L	FDP3682	FQP44N10	IRF1310NPBF	STP30NF10	Unit
Manufacturer	Alpha & Omega	Alpha & Omega	onsemi	onsemi	Infineon	STMicroelectronics	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	100	100	100	100	100	100	V
Id (Ta)	4.7	5	6	—	—	—	A
Id (Tc)	42	17	32	43.5	42	35	A
Rds On (Max) @ Id, Vgs	37 @ 20A, 10V	34 @ 10A, 10V	36 @ 32A, 10V	39 @ 21.75A, 10V	36 @ 22A, 10V	45 @ 15A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 250µA	2.7 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	23 @ 10V	20 @ 10V	28 @ 10V	62 @ 10V	110 @ 10V	55 @ 10V	nC
Vgs (Max)	±25	±20	±20	±25	±20	±20	V
Ciss (Max) @ Vds	1450 @ 50V	870 @ 50V	1250 @ 25V	1800 @ 25V	1900 @ 25V	1180 @ 25V	pF
Power Dissipation (Max) (Tc)	150	23.5	95	146	160	115	W
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package / Case	TO-220-3	TO-220-3 Full Pack	TO-220-3	TO-220-3	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	Active	Obsolete	Active	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Active Product Substitutes (Recommended for New Designs):

The following substitute parts are classified as Active and carry current manufacturer support:

IRF1310NPBF (Infineon Technologies): Matches the AOT416 in Vdss (100V) and Id (Tc) at 42A. Offers 160W power dissipation (Tc), superior to the AOT416's 150W. Gate charge of 110 nC is higher, requiring consideration in gate drive circuit design. ROHS3 compliant. Suitable for high-current applications requiring thermal performance.
STP30NF10 (STMicroelectronics): Rated for 100V and 35A (Tc), providing adequate current handling for most applications. Power dissipation of 115W (Tc) is lower than the AOT416, suitable for moderate thermal environments. Gate charge of 55 nC is moderate. ROHS3 compliant. Highest inventory availability (70,887 pcs).
FDP3682 (onsemi): Rated for 100V and 32A (Tc) with 95W power dissipation (Tc). Rds On of 36 mOhm at 32A, 10V provides efficient switching. Gate charge of 28 nC is comparable to the AOT416. ROHS3 compliant. Suitable for applications with moderate current and thermal requirements.
AOTF2916L (Alpha & Omega Semiconductor Inc.): Maintains manufacturer continuity with the AOT416. Rated for 100V and 17A (Tc) with 23.5W power dissipation (Tc). Lower current rating limits application scope. Gate charge of 20 nC is the lowest among substitutes, reducing drive circuit complexity. ROHS3 compliant. Suitable for low-to-moderate current applications.

Obsolete Product Substitutes (Not Recommended for New Designs):

FQP44N10 (onsemi): Rated for 100V and 43.5A (Tc) with 146W power dissipation (Tc). Classified as Obsolete. Gate charge of 62 nC is elevated. ROHS3 compliant. Suitable only for legacy system maintenance where supply is available.

Compliance and Certification:

All substitute parts carry REACH Unaffected status and EAR99 ECCN classification, matching the AOT416. All active substitutes are ROHS3 compliant. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for parts with specified MSL, indicating no moisture-related handling restrictions.

Frequently Asked Questions (FAQ)

Q: Can the AOTF2916L replace the AOT416 in all applications?

A: The AOTF2916L maintains the same Vdss (100V) and operating temperature range (-55°C to 175°C). However, its continuous drain current (Tc) is 17A compared to the AOT416's 42A. Substitution is valid only for applications where the required current does not exceed 17A (Tc). Gate charge is lower (20 nC vs. 23 nC), which may improve switching performance in gate drive circuits.

Q: What is the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current at ambient temperature (typically 25°C), while Tc represents continuous drain current at case temperature (typically 25°C). Tc ratings are generally higher and reflect the device's capability when mounted on a heatsink. Selection should be based on the actual operating conditions and thermal management of the application.

Q: Why does the IRF1310NPBF have a higher gate charge than the AOT416?

A: Gate charge (Qg) is a function of device geometry and die size. The IRF1310NPBF's higher gate charge (110 nC vs. 23 nC) reflects its larger die area, which enables higher current handling (42A Tc) and power dissipation (160W Tc). Gate drive circuits must be designed to accommodate the higher charge requirement, typically requiring higher drive current or longer switching times.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts listed (AOTF2916L, FDP3682, IRF1310NPBF, STP30NF10) are ROHS3 compliant. The obsolete FQP44N10 is also ROHS3 compliant. The AOT416 does not specify RoHS status. Compliance verification with your specific application requirements is recommended.

Q: Can I use a substitute with lower Rds On than the AOT416?

A: Yes. Lower Rds On values indicate reduced on-state resistance, resulting in lower conduction losses and improved efficiency. All listed substitutes have Rds On values within 34 to 45 mOhm, compared to the AOT416's 37 mOhm. Lower Rds On is generally beneficial for power efficiency and thermal management.

Q: What is the significance of the TO-220-3 Full Pack designation for the AOTF2916L?

A: The TO-220-3 Full Pack (AOTF2916L) indicates a variant of the standard TO-220-3 package with enhanced lead forming or packaging. Both are mechanically and electrically compatible with standard TO-220-3 footprints. Verification with your PCB layout and mechanical assembly process is recommended.

Q: Which substitute offers the best thermal performance?

A: The IRF1310NPBF offers the highest power dissipation rating at 160W (Tc), followed by FQP44N10 at 146W (Tc). For applications requiring maximum thermal headroom, the IRF1310NPBF is the active product choice. The STP30NF10 offers 115W (Tc), suitable for moderate thermal environments.

Q: Is the AOT416 still available for purchase?

A: The AOT416 is classified as Obsolete. Inventory of 10,468 pcs is reported as new original in stock, but future availability is not guaranteed. Active substitute parts (AOTF2916L, FDP3682, IRF1310NPBF, STP30NF10) are recommended for new designs and ongoing production to ensure long-term supply continuity.

Q: What is the maximum gate voltage for each substitute?

A: The AOT416 and FQP44N10 support ±25V maximum gate voltage. AOTF2916L, FDP3682, IRF1310NPBF, and STP30NF10 support ±20V maximum gate voltage. Gate drive circuits must be designed within these limits. If your existing circuit uses ±25V, verify compatibility with ±20V-rated substitutes.

Q: How do I select between multiple active substitutes?

A: Selection depends on application requirements: (1) For maximum current handling and thermal performance, choose IRF1310NPBF (42A Tc, 160W Tc). (2) For moderate current with good availability, choose STP30NF10 (35A Tc, 115W Tc). (3) For manufacturer continuity and lower gate charge, choose AOTF2916L (17A Tc, 23.5W Tc). (4) For balanced performance, choose FDP3682 (32A Tc, 95W Tc). Verify current and thermal requirements against your application specifications.

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