AOT280L N-Channel MOSFET 80V 20.5A/140A TO-220 Equivalent & Substitute Parts

Part Overview

The AOT280L is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 80V drain-to-source voltage with continuous drain current of 20.5A at Ta and 140A at Tc. This device is packaged in TO-220-3 through-hole configuration and is currently in active product status. The AOT280L is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary device becomes unavailable, when design requirements demand alternative electrical characteristics, or when supply chain optimization requires component standardization across manufacturing facilities.

Substiute Parts

AOT280L
Alpha & Omega Semiconductor Inc.In Stock: 1719AOT280L Datasheet
AOT280L
Current Part
CSD19506KCS
Texas InstrumentsIn Stock: 2225CSD19506KCS Datasheet
CSD19506KCS
MFR Recommended
FDP027N08B-F102
onsemiIn Stock: 15571FDP027N08B-F102 Datasheet
FDP027N08B-F102
MFR Recommended
FDP032N08B-F102
onsemiIn Stock: 1454FDP032N08B-F102 Datasheet
FDP032N08B-F102
MFR Recommended
FDP036N10A
onsemiIn Stock: 25851FDP036N10A Datasheet
FDP036N10A
MFR Recommended
FDP86363-F085
onsemiIn Stock: 2492FDP86363-F085 Datasheet
FDP86363-F085
MFR Recommended
STP270N8F7
STMicroelectronicsIn Stock: 45867STP270N8F7 Datasheet
STP270N8F7
MFR Recommended
TK100E10N1,S1X
Toshiba Semiconductor and StorageIn Stock: 2903TK100E10N1,S1X Datasheet
TK100E10N1,S1X
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 80 V
Continuous Drain Current @ 25°C (Ta) 20.5 A
Continuous Drain Current @ 25°C (Tc) 140 A
On-Resistance (Rds On) @ 20A, 10V 2.7 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3.4 V
Gate Charge (Qg) @ 10V 224 nC
Input Capacitance (Ciss) @ 40V 11135 pF
Power Dissipation (Ta) 2.1 W
Power Dissipation (Tc) 333 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the AOT280L is determined by the following critical parameters:

Mandatory Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 80V
  • Package Type: TO-220-3 through-hole configuration
  • Mounting Type: Through hole
  • Operating Temperature Range: Must encompass -55°C to 175°C
  • FET Type: N-Channel MOSFET technology
  • Gate Voltage (Vgs Max): ±20V maximum rating

Performance Equivalence Criteria:

  • Continuous Drain Current: Substitute must support minimum 20.5A at Ta or equivalent thermal performance
  • On-Resistance (Rds On): Lower or equivalent values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Power Dissipation: Thermal capability at Tc determines application suitability

Substitute parts are grouped into two categories: direct electrical equivalents (matching 80V Vdss rating) and higher-voltage alternatives (100V Vdss) that provide backward compatibility with enhanced voltage margin.

Parameter Comparison

Parameter AOT280L CSD19506KCS FDP027N08B-F102 FDP032N08B-F102 FDP036N10A FDP86363-F085 STP270N8F7 TK100E10N1,S1X
Manufacturer Alpha & Omega Texas Instruments onsemi onsemi onsemi onsemi STMicroelectronics Toshiba
Vdss (V) 80 80 80 80 100 80 80 100
Id @ 25°C (A) 20.5 (Ta) / 140 (Tc) 100 (Ta) 120 (Tc) 120 (Tc) 120 (Tc) 110 (Tc) 180 (Tc) 100 (Ta)
Rds On (mOhm) 2.7 @ 20A, 10V 2.3 @ 100A, 10V 2.7 @ 100A, 10V 3.3 @ 100A, 10V 3.6 @ 75A, 10V 2.8 @ 80A, 10V 2.5 @ 90A, 10V 3.4 @ 50A, 10V
Vgs(th) (V) 3.4 @ 250µA 3.2 @ 250µA 4.5 @ 250µA 4.5 @ 250µA 4.0 @ 250µA 4.0 @ 250µA 4.0 @ 250µA 4.0 @ 1mA
Qg (nC) 224 @ 10V 156 @ 10V 178 @ 10V 144 @ 10V 116 @ 10V 150 @ 10V 193 @ 10V 140 @ 10V
Ciss (pF) 11135 @ 40V 12200 @ 40V 13530 @ 40V 10965 @ 40V 7295 @ 25V 10000 @ 40V 13600 @ 50V 8800 @ 50V
Power Dissipation Tc (W) 333 375 246 263 333 300 315 255
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 150
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Active Active Active Active Active Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (80V Vdss Rating):

The CSD19506KCS (Texas Instruments NexFET™ series) is the preferred primary substitute. It maintains the 80V Vdss rating, provides superior on-resistance performance (2.3 mOhm vs. 2.7 mOhm), and offers higher continuous drain current capability (100A Ta). The device is active in production status with RoHS3 compliance and higher power dissipation capacity (375W Tc vs. 333W Tc).

The FDP027N08B-F102 (onsemi PowerTrench® series) is an alternative 80V substitute with 120A continuous drain current and equivalent on-resistance (2.7 mOhm). This device is active in production with extensive inventory availability (15,500 pcs).

The STP270N8F7 (STMicroelectronics STripFET™ VII series) provides the highest current capability among 80V options at 180A continuous drain current with superior on-resistance (2.5 mOhm). This device is active in production with the largest inventory (45,794 pcs).

Secondary Substitutes (100V Vdss Rating):

The FDP036N10A (onsemi PowerTrench® series) and TK100E10N1,S1X (Toshiba U-MOSVIII-H series) provide 100V Vdss rating, offering enhanced voltage margin for applications requiring higher transient voltage protection. Both devices maintain TO-220-3 packaging and are active in production status.

Obsolete Part Consideration:

The FDP86363-F085 is marked as obsolete product status. While electrically compatible with 80V Vdss and 110A continuous drain current, this device should not be selected for new designs or long-term production commitments.

Temperature Range Limitation:

The TK100E10N1,S1X operates to 150°C maximum junction temperature, which is below the AOT280L specification of 175°C. This device is suitable only for applications where the thermal environment does not exceed 150°C.

Frequently Asked Questions (FAQ)

Q: Can I use a 100V rated MOSFET as a substitute for the 80V AOT280L?

A: Yes. The FDP036N10A and TK100E10N1,S1X are electrically compatible substitutes with 100V Vdss rating. The higher voltage rating provides backward compatibility and enhanced transient voltage protection. All other electrical parameters remain within acceptable operating ranges for the AOT280L application.

Q: What is the difference between Ta and Tc current ratings?

A: Ta represents continuous drain current measured at ambient temperature (typically 25°C with natural convection). Tc represents continuous drain current measured at case temperature (typically 25°C with forced cooling or thermal interface material). Tc ratings are generally higher due to improved heat dissipation. Substitute selection should match the thermal conditions of the original application.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts are RoHS3 compliant. The AOT280L is also RoHS3 compliant. REACH status is unaffected for all parts.

Q: Why is the FDP86363-F085 listed if it is obsolete?

A: The FDP86363-F085 is included in the substitution list because it was originally specified as an equivalent part. However, its obsolete product status means it should not be selected for new designs. Active alternatives with superior performance characteristics are available.

Q: What is the significance of on-resistance (Rds On) in MOSFET selection?

A: On-resistance determines conduction losses and heat generation during operation. Lower Rds On values reduce power dissipation and improve efficiency. The CSD19506KCS (2.3 mOhm) and STP270N8F7 (2.5 mOhm) offer superior on-resistance compared to the AOT280L (2.7 mOhm), resulting in lower thermal stress and improved reliability.

Q: Can I substitute the AOT280L with a part having lower gate charge (Qg)?

A: Yes. Lower gate charge reduces switching losses and improves switching speed. The FDP036N10A (116 nC) and TK100E10N1,S1X (140 nC) have significantly lower gate charge than the AOT280L (224 nC), making them suitable for high-frequency switching applications.

Q: What is the importance of input capacitance (Ciss) in MOSFET applications?

A: Input capacitance affects gate drive requirements and switching speed. Higher Ciss values require more gate charge and stronger drive circuits. The FDP036N10A (7,295 pF) has substantially lower input capacitance than the AOT280L (11,135 pF), reducing gate drive power requirements.

Q: Are all substitute parts available in the same TO-220-3 package?

A: Yes. All listed substitute parts are packaged in TO-220-3 through-hole configuration, ensuring mechanical and thermal interface compatibility with the AOT280L footprint.

Q: Which substitute offers the best overall performance?

A: The STP270N8F7 provides the highest current capability (180A Tc), lowest on-resistance (2.5 mOhm), and largest inventory availability (45,794 pcs). The CSD19506KCS offers the best balance of performance metrics with superior on-resistance (2.3 mOhm) and higher power dissipation capacity (375W Tc).

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