AON7900 Equivalent & Substitute Parts

Part Overview

The AON7900 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., designed for surface mount applications in 8-DFN-EP (3.3x3.3) packaging. This component features logic level gate operation with a 30V drain-to-source voltage rating and continuous drain current capabilities of 8A and 13A. The AON7900 is classified as obsolete, necessitating identification of active equivalent and substitute parts for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate characteristics, and thermal performance while accommodating packaging variations.

Substiute Parts

AON7900
Alpha & Omega Semiconductor Inc.In Stock: 9153AON7900 Datasheet
AON7900
Current Part
FDMC7200
onsemiIn Stock: 46117FDMC7200 Datasheet
FDMC7200
MFR Recommended
FDMC7200S
onsemiIn Stock: 2406FDMC7200S Datasheet
FDMC7200S
MFR Recommended
FDMC8200S
onsemiIn Stock: 65135FDMC8200S Datasheet
FDMC8200S
MFR Recommended
HS8K11TB
Rohm SemiconductorIn Stock: 2279HS8K11TB Datasheet
HS8K11TB
MFR Recommended

Key Parameters

Parameter AON7900 Specification
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A, 13A
Rds On (Max) @ Id, Vgs 21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 15V
Power - Max 1.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-DFN-EP (3.3x3.3)
Technology MOSFET (Metal Oxide)
FET Feature Logic Level Gate
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the AON7900 are selected based on strict electrical and mechanical compatibility criteria. The following parameters determine substitution validity:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): Must equal or exceed 30V
  • Configuration: Must maintain 2 N-Channel (Dual) topology
  • FET Feature: Must support Logic Level Gate operation
  • Operating Temperature Range: Must encompass -55°C ~ 150°C (TJ)
  • Mounting Type: Must be Surface Mount
  • Package Classification: Must be 8-pin PowerWDFN variants

Performance Parameters for Evaluation:

  • Continuous Drain Current (Id): Substitute must support the required current levels for the application
  • On-Resistance (Rds On): Lower values indicate improved performance; substitutes with comparable or superior ratings are acceptable
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Lower values improve switching speed
  • Maximum Power Dissipation: Must accommodate thermal requirements

All identified substitutes maintain the 30V Vdss rating, dual N-channel configuration, logic level gate feature, and -55°C to 150°C operating temperature range. Packaging variations between 8-DFN-EP (3.3x3.3) and 8-Power33 (3x3) are mechanically compatible within the 8-PowerWDFN family. Substitutes are limited to active product status components with current manufacturing availability.

Parameter Comparison

Parameter AON7900 FDMC7200 FDMC7200S FDMC8200S HS8K11TB
Manufacturer Alpha & Omega Semiconductor Inc. onsemi onsemi onsemi Rohm Semiconductor
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 8A, 13A 6A, 8A 7A, 13A 6A, 8.5A 7A, 11A
Rds On (Max) @ Id, Vgs 21mOhm @ 8A, 10V 23.5mOhm @ 6A, 10V 22mOhm @ 6A, 10V 20mOhm @ 6A, 10V 17.9mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V 10nC @ 10V 10nC @ 10V 10nC @ 10V 11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 15V 660pF @ 15V 660pF @ 15V 660pF @ 15V 500pF @ 15V
Power - Max 1.8W 700mW, 900mW 700mW, 1W 700mW, 1W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-UDFN Exposed Pad
Supplier Device Package 8-DFN-EP (3.3x3.3) 8-Power33 (3x3) 8-Power33 (3x3) 8-Power33 (3x3) HSML3030L10
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Product Status Obsolete Active Active Active Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

FDMC7200S (onsemi)

The FDMC7200S is the primary substitute for the AON7900 in applications requiring maximum current handling. This part matches the 13A continuous drain current specification of the AON7900 and maintains all critical electrical parameters within compatible ranges. The FDMC7200S is an active product with ROHS3 compliance and current manufacturing availability. The 8-Power33 (3x3) package is mechanically compatible with the original 8-DFN-EP (3.3x3.3) footprint. On-resistance of 22mOhm at 6A, 10V is comparable to the AON7900 specification. This substitute is suitable for direct replacement in designs where the 13A current rating is required.

FDMC8200S (onsemi)

The FDMC8200S provides an alternative with improved on-resistance performance (20mOhm @ 6A, 10V) compared to the AON7900. This part supports 8.5A continuous drain current and is rated for 1W maximum power dissipation. The FDMC8200S is an active product with ROHS3 compliance and the highest inventory availability (65,100 pieces). The 8-Power33 (3x3) package maintains mechanical compatibility. This substitute is appropriate for applications where the 8A current level is sufficient and lower on-resistance is beneficial for thermal management.

HS8K11TB (Rohm Semiconductor)

The HS8K11TB offers superior on-resistance performance (17.9mOhm @ 7A, 10V) and the highest maximum power rating (2W) among all substitutes. This part supports 11A continuous drain current and features lower input capacitance (500pF @ 15V) compared to the AON7900. The HS8K11TB is an active product with ROHS3 compliance. The HSML3030L10 package is mechanically compatible within the 8-pin exposed pad family. This substitute is optimal for applications requiring enhanced thermal performance and switching efficiency.

FDMC7200 (onsemi)

The FDMC7200 is suitable for applications where continuous drain current requirements do not exceed 8A. This part features comparable on-resistance (23.5mOhm @ 6A, 10V) and is an active product with ROHS3 compliance and high inventory availability (46,033 pieces). The 8-Power33 (3x3) package maintains mechanical compatibility. This substitute is appropriate for cost-optimized designs with lower current requirements.

All substitute parts maintain the 30V Vdss rating, dual N-channel configuration, logic level gate feature, and -55°C to 150°C operating temperature range required for AON7900 replacement. Selection among substitutes depends on specific application current requirements, thermal constraints, and performance optimization priorities.

Frequently Asked Questions (FAQ)

Q: Can the FDMC7200 replace the AON7900 in all applications?

A: The FDMC7200 is suitable only for applications where continuous drain current does not exceed 8A. The AON7900 supports 13A continuous drain current, which the FDMC7200 cannot match. For applications requiring the full 13A rating, the FDMC7200S is the appropriate substitute.

Q: What is the difference between the 8-DFN-EP (3.3x3.3) and 8-Power33 (3x3) packages?

A: Both packages are mechanically compatible 8-pin exposed pad variants within the 8-PowerWDFN family. The dimensional difference (3.3x3.3 versus 3x3) is negligible for PCB layout purposes. All substitute parts use the 8-Power33 (3x3) package and are directly compatible with AON7900 footprints.

Q: Which substitute offers the best thermal performance?

A: The HS8K11TB provides the highest maximum power dissipation rating (2W) and the lowest on-resistance (17.9mOhm @ 7A, 10V), resulting in superior thermal performance. This part is optimal for applications with stringent thermal constraints.

Q: Are all substitute parts RoHS compliant?

A: Yes. All four substitute parts (FDMC7200, FDMC7200S, FDMC8200S, and HS8K11TB) are ROHS3 compliant. The AON7900 RoHS status is not specified in the provided data.

Q: What is the gate threshold voltage difference between the AON7900 and substitutes?

A: The AON7900 has a gate threshold voltage of 2.3V @ 250µA. The onsemi substitutes (FDMC7200, FDMC7200S, FDMC8200S) specify 3V @ 250µA, and the HS8K11TB specifies 2.5V @ 1mA. These differences are within acceptable logic level gate operation ranges and do not prevent substitution.

Q: Which substitute has the lowest gate charge?

A: The FDMC7200, FDMC7200S, and FDMC8200S all feature 10nC gate charge @ 10V, compared to 11nC for the AON7900. The HS8K11TB has 11.1nC @ 10V. Lower gate charge reduces switching losses and improves efficiency.

Q: Can I use the FDMC8200S if my application requires 13A continuous current?

A: No. The FDMC8200S supports only 8.5A continuous drain current. For applications requiring 13A, the FDMC7200S is the only substitute that matches this specification.

Q: What is the inventory status of each substitute?

A: FDMC8200S has the highest availability (65,100 pieces), followed by FDMC7200 (46,033 pieces), FDMC7200S (2,356 pieces), and HS8K11TB (2,241 pieces). Inventory levels should be verified with suppliers for current production requirements.

Q: Are all substitutes rated for the same operating temperature range?

A: Yes. All substitute parts are rated for -55°C to 150°C (TJ) operating temperature, matching the AON7900 specification.

Q: What is the moisture sensitivity level for all parts?

A: All parts, including the AON7900 and all substitutes, have MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions for storage and handling.

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