AON7812 Equivalent & Substitute Parts

Part Overview

The AON7812 is a dual N-channel MOSFET array manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage and 6A continuous drain current in an 8-DFN (3x3) surface mount package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The part delivers 4.1W maximum power dissipation and operates across the industrial temperature range of -55°C to 150°C.

Substiute Parts

AON7812
Alpha & Omega Semiconductor Inc.In Stock: 994AON7812 Datasheet
AON7812
Current Part
BSC150N03LDGATMA1
Infineon TechnologiesIn Stock: 5435BSC150N03LDGATMA1 Datasheet
BSC150N03LDGATMA1
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 6 A
On-Resistance (Rds On) @ 6A, 10V 14.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.2 V
Gate Charge (Qg) @ 10V 15 nC
Input Capacitance (Ciss) @ 15V 600 pF
Maximum Power Dissipation 4.1 W
Operating Temperature Range -55 to 150 °C (TJ)
Configuration 2 N-Channel (Dual)
Package Type 8-DFN (3x3)

Substitute Part Grouping Explanation

Substitution of the AON7812 is based on electrical and mechanical parameter compatibility within the dual N-channel MOSFET category. The following criteria establish substitution validity:

Electrical Compatibility Requirements:

  • Drain-to-source voltage rating equal to or greater than 30V
  • Continuous drain current rating equal to or greater than 6A at 25°C
  • Gate threshold voltage within the specified range (2.2V @ 250µA)
  • Operating temperature range encompassing -55°C to 150°C

Mechanical Compatibility Requirements:

  • Surface mount package configuration
  • Pin count and functional arrangement supporting dual N-channel topology
  • Physical dimensions compatible with 8-pin DFN or equivalent power package formats

The BSC150N03LDGATMA1 from Infineon Technologies meets these criteria with enhanced electrical performance characteristics and active product status, providing design continuity for applications previously utilizing the AON7812.

Parameter Comparison

Parameter AON7812 BSC150N03LDGATMA1 Unit
Manufacturer Alpha & Omega Semiconductor Inc. Infineon Technologies
Product Status Obsolete Active
Configuration 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30 30 V
Continuous Drain Current (Id) @ 25°C 6 8 A
On-Resistance (Rds On) 14.5 @ 6A, 10V 15 @ 20A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.2 2.2 V
Gate Charge (Qg) @ 10V 15 13.2 nC
Input Capacitance (Ciss) @ 15V 600 1100 pF
Maximum Power Dissipation 4.1 26 W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerSMD, Flat Leads 8-PowerVDFN
Supplier Device Package 8-DFN (3x3) PG-TDSON-8-4
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS Code 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

The BSC150N03LDGATMA1 serves as the primary substitute for the obsolete AON7812. Selection of this alternative is supported by the following factors:

Product Status: The BSC150N03LDGATMA1 maintains active product status with Infineon Technologies, ensuring long-term availability and manufacturing continuity. The AON7812 is classified as obsolete, creating supply chain risk for new designs and ongoing production.

Electrical Performance: The substitute part exceeds the electrical requirements of the original device. The 8A continuous drain current rating surpasses the 6A specification of the AON7812, while maintaining identical 30V voltage rating and 2.2V gate threshold voltage. Gate charge is reduced from 15nC to 13.2nC, improving switching efficiency.

Regulatory Compliance: Both devices carry identical REACH and ECCN classifications (REACH Unaffected, EAR99), confirming equivalent regulatory standing. The BSC150N03LDGATMA1 is RoHS3 compliant, meeting current environmental standards.

Thermal Performance: The substitute part provides significantly enhanced power dissipation capability (26W versus 4.1W), enabling operation in higher thermal stress applications while maintaining the same operating temperature range (-55°C to 150°C).

Package Considerations: The BSC150N03LDGATMA1 utilizes an 8-PowerVDFN package (PG-TDSON-8-4) compared to the 8-DFN (3x3) of the original part. PCB layout modifications are required to accommodate the different package footprint.

Frequently Asked Questions (FAQ)

Q: Can the BSC150N03LDGATMA1 directly replace the AON7812 without circuit modifications?

A: Electrical substitution is valid based on voltage rating, current rating, and gate threshold voltage compatibility. However, the different package format (8-PowerVDFN versus 8-DFN) requires PCB footprint redesign. Pin configuration and functional arrangement must be verified against device datasheets prior to implementation.

Q: What is the significance of the higher continuous drain current rating (8A) in the BSC150N03LDGATMA1?

A: The 8A rating of the substitute part exceeds the 6A requirement of the AON7812, providing design margin for current handling. This does not require circuit modification but allows operation at higher current levels if needed. Existing designs operating at 6A or below remain within the safe operating area of the substitute device.

Q: How do the different package types affect circuit board design?

A: The AON7812 uses an 8-DFN (3x3) package while the BSC150N03LDGATMA1 uses an 8-PowerVDFN (PG-TDSON-8-4) package. These packages have different physical dimensions and pin layouts. PCB footprint, trace routing, and thermal management design must be updated to accommodate the new package geometry.

Q: Are there differences in gate charge that affect circuit performance?

A: The BSC150N03LDGATMA1 has a lower gate charge (13.2nC versus 15nC at 10V), resulting in faster switching transitions and reduced gate drive power requirements. This represents an improvement over the original part and does not create compatibility issues.

Q: What is the impact of the higher input capacitance in the substitute part?

A: The BSC150N03LDGATMA1 has higher input capacitance (1100pF versus 600pF at 15V). This increases the charge required to drive the gate and may require adjustment of gate drive circuit parameters. Gate driver selection and timing should be evaluated for the specific application.

Q: Are both parts suitable for the same operating temperature range?

A: Yes. Both the AON7812 and BSC150N03LDGATMA1 operate across -55°C to 150°C junction temperature range, ensuring thermal compatibility for applications requiring extended temperature operation.

Q: What regulatory or compliance differences exist between these parts?

A: Both parts carry identical REACH and ECCN classifications. The BSC150N03LDGATMA1 is RoHS3 compliant, meeting current environmental standards. No regulatory barriers exist to substitution.

Request Quote (Ships tomorrow)