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AON7764 Equivalent & Substitute Parts
Part Overview
The AON7764 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with 30A continuous drain current (Ta) and 32A (Tc). This device is packaged in an 8-DFN-EP (3x3) surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and redesign efforts.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 32A (Tc) | A |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 20A, 10V | mOhm |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 40 | nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 | pF @ 15V |
| Power Dissipation (Max) | 4.2W (Ta), 30W (Tc) | W |
| Operating Temperature | -55 to 150 | °C (TJ) |
| Mounting Type | Surface Mount | — |
| Package / Case | 8-PowerVDFN (3x3) | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the AON7764 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Drain to Source Voltage (Vdss): Must equal or exceed 30V
- FET Type: N-Channel topology required
- Technology: MOSFET (Metal Oxide) construction
- Gate Threshold Voltage (Vgs(th)): Compatibility within standard logic-level or standard-threshold ranges
- On-State Resistance (Rds On): Must support equivalent or superior current handling at specified gate drive voltages
Mechanical Compatibility Criteria:
- Mounting Type: Surface Mount required
- Package Family: DFN or WDFN variants acceptable with compatible pin configurations
- Thermal Performance: Must support equivalent or superior power dissipation ratings
The substitute parts listed below meet these criteria and are sourced from active manufacturers with current product status, ensuring design continuity and supply chain reliability.
Parameter Comparison
| Parameter | AON7764 | NTTFS4965NFTAG | NTTFS4965NFTWG |
|---|---|---|---|
| Manufacturer | Alpha & Omega Semiconductor Inc. | onsemi | onsemi |
| Product Status | Obsolete | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V | 30V | 30V |
| Current - Continuous Drain (Id) @ 25°C (Ta) | 30A | 16.3A | 16.3A |
| Current - Continuous Drain (Id) @ 25°C (Tc) | 32A | 64A | 64A |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 20A, 10V | 3.5 mOhm @ 20A, 10V | 3.5 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | 2.3V @ 250µA | 2.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10V | 29.4 nC @ 10V | 29.4 nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 15V | 2075 pF @ 15V | 2075 pF @ 15V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-PowerVDFN (3x3) | 8-PowerWDFN (3.3x3.3) | 8-PowerWDFN (3.3x3.3) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 | EAR99 |
Engineering Selection Recommendations
Product Status Consideration: The AON7764 is classified as obsolete. The substitute parts NTTFS4965NFTAG and NTTFS4965NFTWG are both active products from onsemi, providing assured long-term availability and manufacturing support.
Compliance and Certification: All listed parts maintain REACH Unaffected status and EAR99 export classification. The onsemi substitutes carry RoHS3 compliance certification, meeting current regulatory requirements for new production applications.
Electrical Performance: The NTTFS4965 series maintains voltage rating parity at 30V Vdss. On-state resistance specifications are comparable (3.5 mOhm versus 3.2 mOhm), with gate threshold voltage within 0.1V of the original device. Gate charge is reduced by approximately 26%, and input capacitance remains within 4% of the original specification.
Thermal Performance: The onsemi substitutes demonstrate superior thermal performance under case temperature conditions (Tc), with 64A continuous drain current capability compared to 32A for the AON7764. This provides enhanced thermal margin for applications requiring sustained current delivery.
Package Compatibility: The substitute parts use 8-WDFN (3.3x3.3) packaging versus the original 8-DFN-EP (3x3). Both are surface mount DFN-family packages with compatible pin configurations. PCB layout modifications may be required to accommodate the slightly larger package footprint (0.3mm increase in each dimension).
Frequently Asked Questions (FAQ)
Q: Can NTTFS4965NFTAG and NTTFS4965NFTWG be used interchangeably as substitutes for AON7764?
A: Both onsemi parts are electrically and mechanically equivalent substitutes for the AON7764. The primary difference between NTTFS4965NFTAG and NTTFS4965NFTWG is the tape-and-reel packaging configuration. Selection between these two variants depends on procurement and assembly requirements rather than electrical performance.
Q: What are the key differences in package dimensions between AON7764 and the substitute parts?
A: The AON7764 uses 8-DFN-EP (3x3) packaging, while the NTTFS4965 series uses 8-WDFN (3.3x3.3) packaging. The WDFN package is 0.3mm larger in both X and Y dimensions. PCB footprint redesign is required for direct substitution. Pin pitch and thermal pad configuration remain compatible with standard DFN assembly processes.
Q: Are there thermal performance advantages to using the NTTFS4965 substitutes?
A: Yes. The NTTFS4965 series supports 64A continuous drain current under case temperature conditions (Tc), compared to 32A for the AON7764. This represents a 100% increase in thermal performance capability. For applications operating near thermal limits, the substitute parts provide enhanced thermal margin and reduced junction temperature rise.
Q: What is the significance of the reduced gate charge in the substitute parts?
A: The NTTFS4965 series exhibits 29.4 nC gate charge versus 40 nC for the AON7764, a 26% reduction. Lower gate charge reduces driver power dissipation and switching losses in high-frequency applications. This improvement is beneficial for efficiency-critical designs but does not affect DC operating characteristics or static electrical performance.
Q: Are the substitute parts RoHS compliant?
A: Yes. The NTTFS4965NFTAG and NTTFS4965NFTWG are both RoHS3 compliant. The original AON7764 RoHS status was not specified in the provided data. For new production applications subject to RoHS requirements, the onsemi substitutes provide assured compliance.
Q: What is the difference between NTTFS4965NFTAG and NTTFS4965NFTWG?
A: Both parts are electrically identical with the same electrical specifications and package type (8-WDFN). The designation difference (NFTAG versus NFTWG) indicates different tape-and-reel packaging configurations used for automated assembly. Selection is based on procurement format and assembly equipment compatibility, not electrical performance.
Q: Can the AON7764 be directly replaced on existing PCBs without layout modification?
A: Direct PCB replacement is not possible without footprint modification. The package size difference (3x3 versus 3.3x3.3) requires PCB redesign. However, the pin configuration and thermal pad layout are compatible with standard DFN assembly processes, minimizing redesign complexity.
Q: What compliance certifications apply to all listed parts?
A: All parts maintain REACH Unaffected status and EAR99 export classification. The onsemi substitutes additionally carry RoHS3 compliance. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, indicating no special moisture control requirements during storage or assembly.
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