AON7760 Equivalent & Substitute Parts

Part Overview

The AON7760 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 25V drain-to-source voltage with continuous drain current of 33A at Ta and 75A at Tc. This device is packaged in an 8-DFN-EP (3.3x3.3) surface mount configuration and is part of the AlphaMOS series. The AON7760 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.

Substiute Parts

AON7760

Alpha & Omega Semiconductor Inc.In Stock: 945AON7760 Datasheet

Current PartRFQ

BSC009NE2LSATMA1

Infineon TechnologiesIn Stock: 2237BSC009NE2LSATMA1 Datasheet

MFR RecommendedRFQ

FDMC012N03

onsemiIn Stock: 18628FDMC012N03 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AON7760 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): Minimum 25V rating required
• Continuous Drain Current (Id): Minimum 33A at Ta or equivalent thermal performance
• Gate Threshold Voltage (Vgs(th)): Compatibility within standard logic-level switching ranges
• On-State Resistance (Rds On): Performance within acceptable power dissipation limits
• Gate Charge (Qg): Switching speed and drive circuit compatibility
• Operating Temperature Range: -55°C to 150°C junction temperature

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount
• Package Classification: 8-pin power package variants (8-DFN, 8-TDSON, 8-PowerWDFN)
• Moisture Sensitivity Level: MSL 1 (Unlimited)

The substitute parts BSC009NE2LSATMA1 and FDMC012N03 meet these criteria through equivalent or superior electrical performance and compatible surface mount packaging, enabling direct functional replacement in circuit designs originally specified for the AON7760.

Parameter Comparison

Engineering Selection Recommendations

BSC009NE2LSATMA1 (Infineon Technologies OptiMOS™ Series)

The BSC009NE2LSATMA1 is an active product with ROHS3 compliance and superior electrical performance relative to the obsolete AON7760. This device provides 41A continuous drain current at Ta and 100A at Tc, exceeding the AON7760 specifications. The on-state resistance of 0.9mOhm at 30A, 10V is significantly lower than the AON7760 at 2mOhm, resulting in reduced power dissipation and improved thermal efficiency. Gate charge of 126 nC at 10V is higher than the AON7760, requiring consideration in high-frequency switching applications. The 8-PowerTDFN package is mechanically compatible with the original 8-PowerWDFN footprint for most applications. Maximum gate voltage rating of ±20V provides enhanced gate drive margin. This substitute is recommended for applications prioritizing thermal performance and long-term component availability.

FDMC012N03 (onsemi PowerTrench® Series)

The FDMC012N03 is an active product with ROHS3 compliance and represents an alternative substitute with higher voltage rating (30V Vdss) and exceptional thermal performance. This device delivers 35A continuous drain current at Ta and 185A at Tc, providing superior thermal headroom. The on-state resistance of 1.23mOhm at 35A, 10V is lower than the AON7760, supporting reduced power dissipation. Gate charge of 110 nC at 10V falls between the AON7760 and BSC009NE2LSATMA1, offering moderate switching speed characteristics. The 8-PowerWDFN package matches the original AON7760 package classification. Maximum gate voltage rating of ±12V is lower than the AON7760, requiring verification in gate drive circuits. This substitute is recommended for applications requiring higher voltage margin and maximum thermal dissipation capability.

Both substitutes are active products with current manufacturing support, REACH compliance, and MSL 1 moisture sensitivity ratings, ensuring long-term availability and supply chain stability compared to the obsolete AON7760.

Frequently Asked Questions (FAQ)

Q: Can the BSC009NE2LSATMA1 and FDMC012N03 be used interchangeably with the AON7760?

A: Both devices are functionally compatible substitutes for the AON7760 in N-Channel MOSFET applications requiring 25V or higher drain-to-source voltage ratings. However, they are not directly interchangeable without circuit evaluation. The BSC009NE2LSATMA1 matches the 25V Vdss rating exactly, while the FDMC012N03 provides 30V rating. Selection depends on specific application requirements for voltage margin, thermal performance, and gate drive characteristics.

Q: What are the key electrical differences between these substitutes?

A: The BSC009NE2LSATMA1 provides the lowest on-state resistance (0.9mOhm) and highest continuous drain current at Tc (100A), optimizing for thermal efficiency. The FDMC012N03 offers the highest Tc drain current (185A) and higher Vdss rating (30V), providing maximum thermal dissipation and voltage margin. Both devices have higher gate charge than the AON7760, which may affect switching frequency performance in high-speed applications.

Q: Are the package footprints compatible?

A: The AON7760 uses 8-PowerWDFN packaging. The BSC009NE2LSATMA1 uses 8-PowerTDFN packaging, and the FDMC012N03 uses 8-PowerWDFN packaging. While both are 8-pin power packages, the TDSON variant may require PCB layout verification for pin alignment and thermal pad compatibility. The FDMC012N03 package classification matches the original exactly.

Q: What compliance certifications apply to these substitutes?

A: Both BSC009NE2LSATMA1 and FDMC012N03 are ROHS3 compliant and REACH unaffected. Both maintain MSL 1 (Unlimited) moisture sensitivity ratings, matching the original AON7760 specifications. These certifications ensure regulatory compliance for industrial and commercial applications.

Q: How do gate charge differences affect circuit design?

A: The AON7760 has gate charge of 76 nC at 10V. The BSC009NE2LSATMA1 requires 126 nC, and the FDMC012N03 requires 110 nC. Higher gate charge increases switching time and gate drive power requirements. Applications operating at high switching frequencies may experience increased losses with the substitute devices. Gate drive circuit current capacity should be verified to accommodate the higher charge requirements.

Q: Which substitute is recommended for thermal-limited applications?

A: The FDMC012N03 is recommended for applications requiring maximum thermal dissipation, with power dissipation capability of 64W at Tc compared to 34.5W for the AON7760. The BSC009NE2LSATMA1 provides 96W at Tc, offering superior thermal performance when space and cost constraints permit the higher gate charge penalty.

Q: Are there inventory considerations for these substitutes?

A: The AON7760 is obsolete with 909 pieces in stock. The BSC009NE2LSATMA1 has 2200 pieces available, and the FDMC012N03 has 18534 pieces in stock. The FDMC012N03 offers the highest inventory availability for long-term production requirements.