AON7758 Equivalent & Substitute Parts

Part Overview

The AON7758 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 36A (Ta) and 75A (Tc). The device is housed in an 8-DFN-EP (3.3x3.3) surface mount package and is classified as obsolete. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and redesign efforts.

Substiute Parts

AON7758

Alpha & Omega Semiconductor Inc.In Stock: 5000AON7758 Datasheet

Current PartRFQ

NTTFS4C02NTAG

onsemiIn Stock: 190219NTTFS4C02NTAG Datasheet

MFR RecommendedRFQ

RJK0393DPA-00#J5A

Renesas Electronics CorporationIn Stock: 7642RJK0393DPA-00#J5A Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the AON7758 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• FET Type: Must be N-Channel MOSFET
• Operating Temperature Range: Must support -55°C to 150°C
• Gate Voltage Rating (Vgs Max): Must accommodate ±12V minimum

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount required
• Package Family: 8-pin PowerWDFN variants (3.3x3.3 footprint)
• Moisture Sensitivity Level: MSL 1 (Unlimited) preferred

Performance Considerations: Substitute parts must maintain functional equivalence in applications where the AON7758 was originally specified. The continuous drain current, on-resistance, and power dissipation characteristics of substitute parts determine their suitability for specific circuit implementations. Parts with equal or superior electrical ratings are considered direct substitutes.

Parameter Comparison

Engineering Selection Recommendations

NTTFS4C02NTAG (onsemi)

The NTTFS4C02NTAG is an active product from onsemi with electrical specifications that exceed the AON7758 across all critical parameters. The device maintains identical Vdss (30V) and operating temperature range (-55°C to 150°C). The continuous drain current rating of 170A (Tc) significantly exceeds the AON7758's 75A (Tc), providing substantial design margin. The NTTFS4C02NTAG is RoHS3 compliant and carries REACH Unaffected status, meeting modern regulatory requirements. The 8-WDFN (3.3x3.3) package is mechanically compatible with the original 8-DFN-EP footprint. This substitute is suitable for applications requiring equal or higher current capacity and thermal performance.

RJK0393DPA-00#J5A (Renesas Electronics Corporation)

The RJK0393DPA-00#J5A is an active product from Renesas Electronics Corporation with electrical specifications that provide functional equivalence to the AON7758. The device maintains identical Vdss (30V) and continuous drain current of 40A (Ta), closely matching the original part's 36A (Ta) rating. The RJK0393DPA-00#J5A is RoHS3 compliant and carries REACH Unaffected status. The 8-WPAK package is mechanically compatible with the original 8-DFN-EP footprint. This substitute is suitable for applications where the original current and power dissipation specifications are primary design constraints.

Both substitute parts are sourced from established semiconductor manufacturers with active product status, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the NTTFS4C02NTAG directly replace the AON7758 in existing designs?

A: The NTTFS4C02NTAG is electrically compatible with the AON7758 across all critical parameters: identical Vdss (30V), matching operating temperature range (-55°C to 150°C), and superior current handling (170A vs. 75A). The 8-WDFN (3.3x3.3) package is mechanically compatible with the original 8-DFN-EP footprint. Direct substitution is supported without circuit modification.

Q: What are the key differences between the NTTFS4C02NTAG and RJK0393DPA-00#J5A?

A: The NTTFS4C02NTAG provides significantly higher continuous drain current (170A vs. 40A) and power dissipation capability (91W vs. 40W). The RJK0393DPA-00#J5A offers closer current matching to the original AON7758 (40A Ta vs. 36A Ta). Selection depends on application thermal and current requirements. Both maintain identical Vdss (30V) and are mechanically compatible with the original footprint.

Q: Are package dimensions identical between the AON7758 and substitute parts?

A: The AON7758 uses an 8-DFN-EP (3.3x3.3) package. The NTTFS4C02NTAG uses an 8-WDFN (3.3x3.3) package, and the RJK0393DPA-00#J5A uses an 8-WPAK package. All three packages share the same 3.3x3.3mm footprint dimensions and are compatible with identical PCB layouts. Pin configurations must be verified against device datasheets for signal integrity.

Q: Do the substitute parts meet regulatory compliance requirements?

A: Both the NTTFS4C02NTAG and RJK0393DPA-00#J5A are RoHS3 compliant and carry REACH Unaffected status. Both maintain MSL 1 (Unlimited) moisture sensitivity rating. These certifications align with modern manufacturing and environmental standards.

Q: What is the impact of different gate charge specifications on circuit design?

A: The AON7758 specifies 100 nC gate charge at 10V, while the NTTFS4C02NTAG specifies 20 nC at 4.5V and the RJK0393DPA-00#J5A specifies 21 nC at 4.5V. Lower gate charge reduces driver power dissipation and enables faster switching. Gate driver circuits must be evaluated to confirm compatibility with the substitute part's gate charge characteristics.

Q: Can the substitute parts handle the same power dissipation as the AON7758?

A: The AON7758 dissipates 4.2W (Ta) and 34W (Tc). The NTTFS4C02NTAG dissipates up to 91W (Tc), and the RJK0393DPA-00#J5A dissipates up to 40W (Tc). Both substitutes exceed the original part's power dissipation capability, providing thermal margin in applications with equivalent or lower power requirements.

Q: What is the significance of the on-resistance (Rds On) differences?

A: The AON7758 specifies 1.85 mOhm Rds On at 20A, 10V. The NTTFS4C02NTAG specifies 2.25 mOhm, and the RJK0393DPA-00#J5A specifies 4.3 mOhm. Lower on-resistance reduces conduction losses. The NTTFS4C02NTAG maintains lower on-resistance despite higher current rating. The RJK0393DPA-00#J5A exhibits higher on-resistance, which may increase power dissipation in high-current applications.

Q: Are there any input capacitance considerations for gate driver design?

A: The AON7758 specifies 5200 pF input capacitance at 15V. The NTTFS4C02NTAG specifies 2980 pF, and the RJK0393DPA-00#J5A specifies 3270 pF. Lower input capacitance reduces gate driver current requirements and switching losses. Both substitutes exhibit lower input capacitance, potentially improving overall circuit efficiency.