AON7752 N-Channel MOSFET 30V 15A/16A Equivalent & Substitute Parts

Part Overview

The AON7752 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 15A (Ta) and 16A (Tc). The device is housed in an 8-DFN-EP (3x3) surface mount package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C	15A (Ta), 16A (Tc)	A
RDS(on) Max @ 10V Gate Drive	8.2	mOhm
Gate Threshold Voltage (Vgs(th))	2.5	V @ 250µA
Gate Charge (Qg) @ 10V	15	nC
Input Capacitance (Ciss) @ 15V	605	pF
Power Dissipation (Max)	3.1W (Ta), 20W (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	8-DFN-EP (3x3)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AON7752 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must support minimum 15A at Ta or equivalent thermal conditions
Gate Drive Voltage: Compatible with 4.5V to 10V drive levels
RDS(on): Lower or equivalent on-resistance at specified gate drive voltage
Gate Threshold Voltage (Vgs(th)): Must fall within standard logic-level range (1V to 3V)
Operating Temperature Range: Must support -55°C to 150°C junction temperature

Mechanical Compatibility Criteria:

Mounting Type: Surface mount only
Package Form Factor: 8-pin DFN, DFN-EP, VSON, MLP, HSMT, or SOP variants with equivalent footprint dimensions (approximately 3x3 mm to 5x5 mm)
Pin Configuration: Compatible with standard N-Channel MOSFET pinout

Regulatory Compliance:

RoHS3 Compliance: Required
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred
REACH Status: REACH Unaffected or compliant

Substitute parts are grouped into two categories: Direct Substitutes (matching or exceeding all electrical specifications with minimal package variation) and Functional Equivalents (meeting electrical requirements with acceptable package differences for board redesign scenarios).

Parameter Comparison

Manufacturer	Part Number	Vdss (V)	Id @ 25°C (A)	RDS(on) Max (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Ciss @ 15V (pF)	Package	Status
Alpha & Omega	AON7752	30	15 (Ta), 16 (Tc)	8.2 @ 16A, 10V	2.5 @ 250µA	15 @ 10V	605 @ 15V	8-DFN-EP (3x3)	Obsolete
Alpha & Omega	AONR36326C	30	12 (Ta), 12 (Tc)	9.8 @ 12A, 10V	2.3 @ 250µA	15 @ 10V	540 @ 15V	8-DFN-EP (3x3)	Active
Texas Instruments	CSD17551Q3A	30	12 (Tc)	9 @ 11A, 10V	2.1 @ 250µA	7.8 @ 4.5V	1370 @ 15V	8-VSONP (3x3.3)	Active
Texas Instruments	CSD17579Q3A	30	20 (Ta)	10.2 @ 8A, 10V	1.9 @ 250µA	15 @ 10V	998 @ 15V	8-VSONP (3x3.3)	Active
Texas Instruments	CSD17579Q3AT	30	20 (Ta)	10.2 @ 8A, 10V	1.9 @ 250µA	15 @ 10V	998 @ 15V	8-VSONP (3x3.3)	Active
onsemi	FDMC7696	30	12 (Ta), 20 (Tc)	11.5 @ 12A, 10V	3 @ 250µA	22 @ 10V	1430 @ 15V	8-MLP (3.3x3.3)	Active
onsemi	NTTFS4C13NTAG	30	7.2 (Ta)	9.4 @ 30A, 10V	2.1 @ 250µA	7.8 @ 4.5V	770 @ 15V	8-WDFN (3.3x3.3)	Active
Rohm Semiconductor	RQ3E100BNTB	30	10 (Ta)	10.4 @ 10A, 10V	2.5 @ 1mA	22 @ 10V	1100 @ 15V	8-HSMT (3.2x3)	Active
Rohm Semiconductor	RQ3E120BNTB	30	12 (Ta)	9.3 @ 12A, 10V	2.5 @ 1mA	29 @ 10V	1500 @ 15V	8-HSMT (3.2x3)	Active
STMicroelectronics	STL11N3LLH6	30	11 (Tc)	7.5 @ 5.5A, 10V	1 @ 250µA (Min)	17 @ 4.5V	1690 @ 24V	PowerFlat™ (3.3x3.3)	Active
Toshiba	TPH8R903NL,LQ	30	20 (Tc)	8.9 @ 10A, 10V	2.3 @ 1mA	9.8 @ 10V	820 @ 15V	8-SOP Advance (5x5)	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

CSD17579Q3A / CSD17579Q3AT (Texas Instruments NexFET™ Series)

Exceeds drain current specification (20A Ta vs. 15A Ta on AON7752)
Matches 30V Vdss rating
Gate charge and threshold voltage within compatible range
Active product status with established supply chain
ROHS3 compliant, MSL 1
Package variation (8-VSONP vs. 8-DFN-EP) requires PCB footprint redesign; pin configuration compatible with standard N-Channel MOSFET layout

FDMC7696 (onsemi PowerTrench® Series)

Supports 12A (Ta) / 20A (Tc) continuous drain current
Matches 30V Vdss rating
Active product status with high inventory availability (47,100 units)
ROHS3 compliant, MSL 1
Package form factor (8-MLP 3.3x3.3) similar to original; footprint redesign required

Secondary Substitutes (Functional Equivalents with Current Derating):

AONR36326C (Alpha & Omega Semiconductor)

Same manufacturer as original part; maintains design continuity
Reduced continuous drain current (12A Ta vs. 15A Ta); suitable for applications with lower current requirements or thermal headroom
Identical package (8-DFN-EP 3x3); direct PCB footprint compatibility
Active product status
ROHS3 compliant, MSL 1

RQ3E120BNTB (Rohm Semiconductor)

Supports 12A (Ta) continuous drain current
Matches 30V Vdss rating
Active product status
ROHS3 compliant, MSL 1
Package (8-HSMT 3.2x3) requires footprint evaluation; similar form factor to original

TPH8R903NL,LQ (Toshiba U-MOSVIII-H Series)

Supports 20A (Tc) continuous drain current
Matches 30V Vdss rating
Superior RDS(on) performance (8.9 mOhm vs. 8.2 mOhm on AON7752)
Active product status
RoHS Compliant (note: RoHS status differs from ROHS3)
Package (8-SOP Advance 5x5) is larger than original; significant PCB redesign required

Not Recommended for Direct Substitution:

NTTFS4C13NTAG (onsemi)

Continuous drain current (7.2A Ta) falls below AON7752 specification (15A Ta); significant current derating required
Suitable only for applications with substantially reduced current requirements

RQ3E100BNTB (Rohm Semiconductor)

Continuous drain current (10A Ta) below AON7752 specification; current derating required
Suitable for reduced-current applications only

STL11N3LLH6 (STMicroelectronics DeepGATE™ / STripFET™ VI)

Continuous drain current (11A Tc) below AON7752 specification; current derating required
Superior RDS(on) performance (7.5 mOhm) and lower gate charge (17 nC) offer efficiency advantages in lower-current designs

CSD17551Q3A (Texas Instruments NexFET™ Series)

Continuous drain current (12A Tc) below AON7752 specification; current derating required
Suitable for applications with reduced current requirements

Frequently Asked Questions (FAQ)

Q: Can I use CSD17579Q3A as a direct replacement for AON7752 without PCB modification?

A: No. While CSD17579Q3A meets or exceeds all electrical specifications (30V Vdss, 20A Ta drain current, compatible gate drive voltage), the package differs. AON7752 uses 8-DFN-EP (3x3), while CSD17579Q3A uses 8-VSONP (3x3.3). PCB footprint redesign is required. Pin configuration is compatible with standard N-Channel MOSFET pinout (Gate, Drain, Source, Drain Pad).

Q: What is the difference between AONR36326C and AON7752?

A: AONR36326C is the active-status successor from the same manufacturer. Key differences: (1) Continuous drain current reduced from 15A (Ta) to 12A (Ta); (2) RDS(on) slightly increased from 8.2 mOhm to 9.8 mOhm; (3) Gate threshold voltage reduced from 2.5V to 2.3V. The package (8-DFN-EP 3x3) is identical, enabling direct PCB footprint compatibility. AONR36326C is suitable for applications where 12A continuous current is sufficient.

Q: Why do some substitute parts show different drain current ratings for Ta versus Tc?

A: Drain current ratings depend on thermal conditions. Ta (ambient temperature) represents current at 25°C ambient with natural convection. Tc (case temperature) represents current at 25°C case temperature with enhanced thermal management (heat sink, thermal vias, copper area). Parts with higher Tc ratings (e.g., FDMC7696 at 20A Tc) can deliver higher current when properly cooled. For AON7752 replacement, verify your application's thermal design to determine whether Ta or Tc rating applies.

Q: Is TPH8R903NL,LQ compatible with AON7752 in terms of RoHS compliance?

A: TPH8R903NL,LQ carries RoHS Compliant status, while AON7752 specifies ROHS3 Compliant. ROHS3 is the current EU RoHS Directive 2011/65/EU standard. RoHS Compliant typically refers to earlier RoHS 2002/95/EC. For new designs targeting current regulatory requirements, ROHS3-compliant parts (CSD17579Q3A, FDMC7696, AONR36326C, RQ3E120BNTB, STL11N3LLH6, NTTFS4C13NTAG) are preferred.

Q: Can I use NTTFS4C13NTAG if my application only requires 7A continuous current?

A: Yes, NTTFS4C13NTAG is suitable for applications with continuous drain current requirements of 7.2A or less. The part meets 30V Vdss specification and offers excellent RDS(on) performance (9.4 mOhm @ 30A, 10V). However, verify that gate drive voltage (4.5V to 10V) and operating temperature range (-55°C to 150°C) match your circuit requirements. Package (8-WDFN 3.3x3.3) differs from AON7752; PCB footprint redesign is required.

Q: What is the significance of Gate Charge (Qg) in selecting a substitute?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., CSD17551Q3A at 7.8 nC @ 4.5V) reduces switching losses and allows faster switching speeds, beneficial in high-frequency applications. Higher gate charge (e.g., FDMC7696 at 22 nC @ 10V) requires more drive current but may offer other performance benefits. For direct substitution, gate charge differences are generally acceptable if the gate driver can supply adequate current at the specified drive voltage (4.5V to 10V).

Q: Are all substitute parts MSL 1 (Unlimited moisture sensitivity)?

A: Yes. All substitute parts listed carry MSL 1 (Unlimited) rating, matching AON7752. This indicates the parts can be stored indefinitely without moisture-related degradation, simplifying inventory management and reducing risk of moisture-induced failures during assembly.

Q: Which substitute offers the best RDS(on) performance?

A: STL11N3LLH6 (STMicroelectronics) offers the lowest RDS(on) at 7.5 mOhm @ 5.5A, 10V. However, this part is rated for only 11A (Tc) continuous drain current, below AON7752's 15A (Ta) specification. For applications requiring both low on-resistance and high current capacity, CSD17579Q3A (10.2 mOhm @ 8A, 10V) or TPH8R903NL,LQ (8.9 mOhm @ 10A, 10V) provide better current handling with acceptable RDS(on) performance.

Q: Can I mix substitute parts from different manufacturers in the same design?

A: Yes, provided all parts meet the electrical specifications required by your circuit (30V Vdss, minimum 15A continuous drain current, compatible gate drive voltage, operating temperature range). However, using parts from a single manufacturer simplifies qualification, reduces supply chain complexity, and ensures consistent performance characteristics. If mixing manufacturers, verify that gate threshold voltage, input capacitance, and gate charge are compatible with your gate driver circuit.

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