AON7548 N-Channel MOSFET 30V 24A Equivalent & Substitute Parts

Part Overview

The AON7548 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with 24A continuous drain current in an 8-DFN-EP (3x3) surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating potential package variations.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
On-Resistance (Rds On) @ 20A, 10V	8.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	22	nC
Input Capacitance (Ciss) @ 15V	1086	pF
Power Dissipation (Max)	3.1 (Ta), 23 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-DFN-EP (3x3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution eligibility for the AON7548 is determined by the following critical parameters:

Voltage Compatibility: All substitute parts must maintain a Vdss rating of 30V or higher to ensure safe operation across the full voltage range of the original design.

Current Capability: Substitute parts must support a continuous drain current (Id) of 24A or greater at the specified temperature condition (Tc) to handle the same load requirements without thermal stress.

On-Resistance (Rds On): The maximum on-resistance specification at rated current and gate voltage must not exceed the original 8.8 mOhm @ 20A, 10V to maintain equivalent power dissipation and thermal performance.

Gate Charge (Qg): Gate charge specifications influence switching speed and driver requirements. Substitute parts with significantly higher gate charge may require circuit redesign.

Package Compatibility: While the original part uses 8-DFN-EP (3x3), substitute parts in alternative surface mount packages (8-HSMT, 8-SOP, 8-TSON) are acceptable if board layout can accommodate the different footprint dimensions.

Thermal Performance: Power dissipation ratings at both ambient (Ta) and case (Tc) temperatures must support the thermal design of the application.

Product Status: Active status substitutes are preferred over obsolete components to ensure long-term availability and supply chain stability.

Parameter Comparison

Parameter	AON7548	AON7380	RQ3E120GNTB	TPH8R903NL,LQ	TPN11003NL,LQ
Manufacturer	Alpha & Omega	Alpha & Omega	Rohm	Toshiba	Toshiba
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	24 (Tc)	24 (Tc)	12 (Ta)	20 (Tc)	11 (Tc)
Rds On @ Rated Current, 10V (mOhm)	8.8 @ 20A	6.8 @ 20A	8.8 @ 12A	8.9 @ 10A	11 @ 5.5A
Vgs(th) (V)	2.5 @ 250µA	2.2 @ 250µA	2.5 @ 1mA	2.3 @ 1mA	2.3 @ 100µA
Qg @ 10V (nC)	22	25	10	9.8	7.5
Ciss @ 15V (pF)	1086	825	590	820	660
Power Dissipation Max (W)	3.1 (Ta), 23 (Tc)	4.1 (Ta), 24 (Tc)	2 (Ta), 16 (Tc)	1.6 (Ta), 24 (Tc)	0.7 (Ta), 19 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	to 150	to 150	to 150
Package	8-DFN-EP (3x3)	8-DFN-EP (3x3)	8-HSMT (3.2x3)	8-SOP Advance (5x5)	8-TSON Advance (3.1x3.1)
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	RoHS Compliant

Engineering Selection Recommendations

Primary Substitute: AON7380

The AON7380 is the direct equivalent from Alpha & Omega Semiconductor Inc., maintaining the identical 8-DFN-EP (3x3) package footprint and electrical specifications. This part is active in production status, ensuring supply chain continuity. The AON7380 demonstrates improved on-resistance (6.8 mOhm vs. 8.8 mOhm) and lower input capacitance (825 pF vs. 1086 pF), resulting in superior thermal performance and faster switching characteristics. ROHS3 compliance provides regulatory alignment for current manufacturing standards. This substitute requires no board layout modifications and is the recommended choice for direct replacement in existing designs.

Secondary Substitute: TPH8R903NL,LQ

The TPH8R903NL,LQ from Toshiba Semiconductor maintains the 30V voltage rating and achieves 20A continuous drain current, approaching the original 24A specification. This part is active in production and RoHS compliant. The 8-SOP Advance (5x5) package requires board layout redesign due to larger footprint dimensions compared to the original 8-DFN-EP (3x3). Superior power dissipation at ambient temperature (1.6W vs. 3.1W) and lower gate charge (9.8 nC vs. 22 nC) provide thermal and switching advantages. This substitute is suitable for applications where board space permits package transition and current requirements can operate within the 20A specification.

Tertiary Substitute: TPN11003NL,LQ

The TPN11003NL,LQ from Toshiba Semiconductor provides an alternative with active production status and RoHS compliance. The 8-TSON Advance (3.1x3.1) package offers a compact footprint comparable to the original 8-DFN-EP (3x3). However, the 11A continuous drain current specification falls below the original 24A requirement, limiting this substitute to applications with reduced current demands. Lower gate charge (7.5 nC) and input capacitance (660 pF) support faster switching operation. This substitute is applicable only when circuit redesign accommodates the reduced current capability.

Not Recommended: RQ3E120GNTB

The RQ3E120GNTB from Rohm Semiconductor is rated for only 12A continuous drain current, significantly below the original 24A specification. While active in production status and ROHS3 compliant, the current limitation makes this part unsuitable for direct replacement in designs requiring full 24A capability. This substitute is applicable only in applications where current requirements have been reduced through circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can the AON7380 be used as a direct replacement for the AON7548 without circuit modifications?

A: Yes. The AON7380 maintains identical voltage (30V), current (24A), and package specifications (8-DFN-EP 3x3) as the AON7548. No circuit modifications are required. The improved on-resistance and lower input capacitance provide performance benefits without compatibility concerns.

Q: What are the implications of using TPH8R903NL,LQ with its 20A rating instead of the original 24A specification?

A: The TPH8R903NL,LQ supports 20A continuous drain current, which is 4A below the original specification. Applications operating at or near 24A will experience thermal stress and potential device failure. This substitute is suitable only for applications where maximum drain current does not exceed 20A. Circuit redesign may be necessary to reduce current demands or implement additional thermal management.

Q: Why does the RQ3E120GNTB have a lower current rating than the AON7548?

A: The RQ3E120GNTB is a different device architecture from Rohm Semiconductor with a 12A continuous drain current specification. This lower rating reflects different die design and thermal characteristics. This part is not suitable for applications requiring the full 24A capability of the original AON7548.

Q: Are package differences between substitutes significant for board layout?

A: Yes. The AON7380 uses the identical 8-DFN-EP (3x3) package and requires no layout changes. The TPH8R903NL,LQ uses 8-SOP Advance (5x5), which is larger and requires board redesign. The TPN11003NL,LQ uses 8-TSON Advance (3.1x3.1), which is comparable in size to the original but still requires footprint verification. Package transitions should be evaluated against available board space and thermal requirements.

Q: What is the significance of gate charge differences among substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original AON7548 has 22 nC gate charge. Substitutes with lower gate charge (AON7380: 25 nC, RQ3E120GNTB: 10 nC, TPH8R903NL,LQ: 9.8 nC, TPN11003NL,LQ: 7.5 nC) require less driver energy and support faster switching. Higher gate charge may require driver circuit adjustments. Lower gate charge generally improves efficiency but does not affect compatibility if the driver circuit has adequate current capability.

Q: How do on-resistance differences affect thermal performance?

A: On-resistance (Rds On) directly determines power dissipation at rated current: P = I² × Rds On. The AON7548 dissipates 8.8 mOhm × (20A)² = 3.52W at 20A. The AON7380 dissipates 6.8 mOhm × (20A)² = 2.72W, a 23% reduction. Lower on-resistance reduces thermal load and extends device life. Substitutes with higher on-resistance increase thermal stress and may require enhanced cooling or current derating.

Q: Is RoHS compliance a factor in selecting substitutes?

A: Yes. The AON7548 does not specify RoHS status. All active substitutes (AON7380, RQ3E120GNTB, TPH8R903NL,LQ, TPN11003NL,LQ) are RoHS compliant, meeting current environmental and regulatory requirements for manufacturing and distribution. RoHS compliance is mandatory for products destined for European markets and many other regions.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: No. Each substitute has different electrical characteristics and package requirements. A design must be qualified for a specific substitute part. Mixing different substitutes in the same production run introduces compatibility risks and complicates supply chain management. Select one substitute and maintain consistency across production batches.

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