AON7538 N-Channel MOSFET 30V 23A/30A Equivalent & Substitute Parts

Part Overview

The AON7538 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 23A (Ta) or 30A (Tc). The device is housed in an 8-DFN-EP (3x3) surface mount package and is part of the AlphaMOS series. The AON7538 carries a product status of "Not For New Designs," indicating that alternative components should be evaluated for new circuit implementations. Identifying equivalent and substitute parts is necessary to ensure design continuity, improve availability, and access devices with active product status and enhanced performance characteristics.

Substiute Parts

AON7538
Alpha & Omega Semiconductor Inc.In Stock: 25509AON7538 Datasheet
AON7538
Current Part
BSZ0589NSATMA1
Infineon TechnologiesIn Stock: 2351BSZ0589NSATMA1 Datasheet
BSZ0589NSATMA1
MFR Recommended
CSD17577Q3A
Texas InstrumentsIn Stock: 50024CSD17577Q3A Datasheet
CSD17577Q3A
MFR Recommended
CSD17577Q3AT
Texas InstrumentsIn Stock: 16850CSD17577Q3AT Datasheet
CSD17577Q3AT
MFR Recommended
DMN3008SFG-13
Diodes IncorporatedIn Stock: 2963DMN3008SFG-13 Datasheet
DMN3008SFG-13
MFR Recommended
DMN3008SFG-7
Diodes IncorporatedIn Stock: 101378DMN3008SFG-7 Datasheet
DMN3008SFG-7
MFR Recommended
DMT35M7LFV-7
Diodes IncorporatedIn Stock: 3149DMT35M7LFV-7 Datasheet
DMT35M7LFV-7
MFR Recommended
NTTFS4C06NTAG
onsemiIn Stock: 65245NTTFS4C06NTAG Datasheet
NTTFS4C06NTAG
MFR Recommended
RQ3E180AJTB
Rohm SemiconductorIn Stock: 20462RQ3E180AJTB Datasheet
RQ3E180AJTB
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 23 A
Continuous Drain Current @ 25°C (Tc) 30 A
On-Resistance (Rds On) @ 20A, 10V 5.1 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.2 V
Gate Charge (Qg) @ 10V 25 nC
Input Capacitance (Ciss) @ 15V 1128 pF
Power Dissipation (Ta) 4.2 W
Power Dissipation (Tc) 24 W
Operating Temperature Range -55 to 150 °C
Package Type 8-DFN-EP (3x3) Surface Mount
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the AON7538 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 30V
  • Continuous drain current must support the application's current requirements
  • On-resistance (Rds On) characteristics must be compatible with thermal and efficiency requirements
  • Gate threshold voltage (Vgs(th)) must fall within acceptable drive voltage ranges
  • Gate charge (Qg) and input capacitance (Ciss) affect switching speed and driver requirements
  • Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

  • Surface mount technology with 8-pin power package configurations
  • Package footprint compatibility (8-DFN-EP, 8-VSONP, 8-WDFN, 8-TSDSON, POWERDI3333-8, 8-HSMT)
  • Moisture sensitivity level MSL 1 (Unlimited)

Regulatory Compliance:

  • RoHS3 compliance required
  • REACH unaffected status
  • EAR99 export classification

Substitute parts are grouped based on whether they maintain electrical performance within acceptable tolerances while offering improved product status (Active vs. Not For New Designs) or enhanced availability.

Parameter Comparison

Parameter AON7538 BSZ0589NSATMA1 CSD17577Q3A CSD17577Q3AT DMN3008SFG-13 DMN3008SFG-7 DMT35M7LFV-7 NTTFS4C06NTAG RQ3E180AJTB
Manufacturer Alpha & Omega Infineon Texas Instruments Texas Instruments Diodes Inc. Diodes Inc. Diodes Inc. onsemi Rohm
Vdss (V) 30 30 30 30 30 30 30 30 30
Id @ 25°C Ta (A) 23 17 35 35 17.6 17.6 N/A 11 18
Id @ 25°C Tc (A) 30 N/A 35 35 N/A N/A 76 67 30
Rds On (mOhm) 5.1 @ 20A, 10V 4.4 @ 8A, 10V 4.8 @ 16A, 10V 4.8 @ 16A, 10V 4.6 @ 13.5A, 10V 4.6 @ 13.5A, 10V 5.0 @ 20A, 10V 4.2 @ 30A, 10V 4.5 @ 18A, 4.5V
Vgs(th) (V) 2.2 @ 250µA 2.0 @ 250µA 1.8 @ 250µA 1.8 @ 250µA 2.3 @ 250µA 2.3 @ 250µA 2.4 @ 250µA 2.2 @ 250µA 1.5 @ 11mA
Qg (nC) 25 @ 10V 15 @ 10V 35 @ 10V 35 @ 10V 86 @ 10V 86 @ 10V 36 @ 10V 36 @ 10V 39 @ 4.5V
Ciss (pF) 1128 @ 15V 950 @ 15V 2310 @ 15V 2310 @ 15V 3690 @ 10V 3690 @ 10V 1667 @ 15V 3366 @ 15V 4290 @ 15V
Power Dissipation Ta (W) 4.2 2.1 2.8 2.8 0.9 0.9 1.98 0.81 2.0
Power Dissipation Tc (W) 24 N/A 53 53 N/A N/A N/A 31 30
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 to 150
Package 8-DFN-EP (3x3) PG-TSDSON-8-FL 8-VSONP (3x3.3) 8-VSONP (3x3.3) PowerDI3333-8 PowerDI3333-8 PowerDI3333-8 (UX) 8-WDFN (3.3x3.3) 8-HSMT (3.2x3)
Product Status Not For New Designs Active Active Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes for Direct Replacement:

The CSD17577Q3A and CSD17577Q3AT (Texas Instruments NexFET™ series) provide the closest electrical performance match to the AON7538. Both devices maintain 30V Vdss rating with 35A continuous drain current (Ta), exceeding the AON7538's 23A specification. These parts feature lower on-resistance (4.8 mOhm vs. 5.1 mOhm) and carry Active product status. The CSD17577Q3AT variant is supplied in Tape & Reel packaging, matching the AON7538's original packaging format. Both devices are RoHS3 compliant with unlimited moisture sensitivity level.

The RQ3E180AJTB (Rohm Semiconductor) offers electrical compatibility with 18A (Ta) and 30A (Tc) continuous drain current ratings. This device maintains the 30V Vdss specification and provides 4.5 mOhm on-resistance. The RQ3E180AJTB carries Active product status and is RoHS3 compliant. Note that the gate threshold voltage specification differs (1.5V @ 11mA vs. 2.2V @ 250µA), requiring driver circuit evaluation.

Secondary Substitutes for Current-Limited Applications:

The BSZ0589NSATMA1 (Infineon OptiMOS™) is suitable for applications where 17A continuous drain current (Ta) is acceptable. This device features superior on-resistance (4.4 mOhm @ 8A, 10V) and lower gate charge (15 nC), reducing switching losses. The part is Active status and RoHS3 compliant.

The NTTFS4C06NTAG (onsemi) provides 11A (Ta) or 67A (Tc) continuous drain current with 4.2 mOhm on-resistance. This device is suitable for applications prioritizing thermal performance at higher current levels. Active product status and RoHS3 compliance are confirmed.

Substitutes for High-Current Applications:

The DMT35M7LFV-7 (Diodes Incorporated) supports 76A continuous drain current (Tc), providing significant current headroom for high-power applications. On-resistance is 5.0 mOhm @ 20A, 10V, matching the AON7538 specification. Active product status and RoHS3 compliance are maintained.

The DMN3008SFG-13 and DMN3008SFG-7 (Diodes Incorporated) both provide 17.6A continuous drain current (Ta) with 4.6 mOhm on-resistance. Both variants are Active status and RoHS3 compliant. The DMN3008SFG-7 offers significantly higher inventory availability (101,300 pcs vs. 2,900 pcs).

Compliance and Regulatory Status:

All substitute parts maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification, matching the AON7538's regulatory profile. All devices operate across the -55°C to 150°C temperature range. Moisture sensitivity level is MSL 1 (Unlimited) for all parts, ensuring equivalent handling and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can the CSD17577Q3A directly replace the AON7538 in existing designs?

A: The CSD17577Q3A maintains electrical compatibility with 30V Vdss and exceeds the AON7538's current rating (35A vs. 23A). The on-resistance is comparable (4.8 mOhm vs. 5.1 mOhm). However, the package differs (8-VSONP vs. 8-DFN-EP), requiring PCB layout verification. Gate charge is higher (35 nC vs. 25 nC), which may affect switching speed in high-frequency applications. The CSD17577Q3AT variant in Tape & Reel packaging may provide better form-factor compatibility.

Q: What is the primary reason to substitute the AON7538?

A: The AON7538 carries "Not For New Designs" product status, indicating Alpha & Omega Semiconductor has discontinued active development and support. Substitution ensures access to devices with Active product status, improved long-term availability, and potential performance enhancements. All listed substitutes carry Active status.

Q: Are package differences significant when selecting a substitute?

A: Yes. While all substitutes are 8-pin surface mount power packages, physical dimensions and pin configurations vary. The AON7538 uses 8-DFN-EP (3x3), while substitutes employ 8-VSONP (3x3.3), 8-WDFN (3.3x3.3), PG-TSDSON-8-FL, POWERDI3333-8, or 8-HSMT (3.2x3). PCB footprint, thermal via placement, and board routing must be re-evaluated for each package type. Mechanical compatibility with existing PCB designs cannot be assumed.

Q: Which substitute offers the best thermal performance?

A: The DMT35M7LFV-7 provides the highest continuous drain current rating (76A Tc), indicating superior thermal capability. Power dissipation at Ta is 1.98W, lower than the AON7538's 4.2W. For applications requiring maximum thermal headroom, the NTTFS4C06NTAG (67A Tc, 810mW Ta) and CSD17577Q3A (53W Tc) also offer enhanced thermal performance.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. The AON7538 requires 25 nC @ 10V. Substitutes range from 15 nC (BSZ0589NSATMA1) to 86 nC (DMN3008SFG-13/7). Lower gate charge reduces driver power dissipation and enables faster switching. Higher gate charge increases driver requirements but may improve noise immunity. Driver circuit current capability must be verified for each substitute.

Q: What is the significance of on-resistance (Rds On) variation among substitutes?

A: On-resistance directly affects conduction losses and heat generation. The AON7538 specifies 5.1 mOhm @ 20A, 10V. Substitutes range from 4.2 mOhm (NTTFS4C06NTAG) to 5.0 mOhm (DMT35M7LFV-7). Lower on-resistance reduces I²R losses, improving efficiency and thermal performance. Selection depends on application current levels and thermal budget constraints.

Q: Are all substitutes compatible with the same gate drive voltage?

A: No. The AON7538 specifies Vgs(th) of 2.2V @ 250µA with maximum gate voltage ±20V. Most substitutes maintain similar specifications (1.8V to 2.4V Vgs(th), ±20V maximum). However, the RQ3E180AJTB specifies 1.5V @ 11mA with ±12V maximum gate voltage, requiring driver circuit re-evaluation. Verify gate drive voltage compatibility before substitution.

Q: Which substitute offers the highest inventory availability?

A: The DMN3008SFG-7 provides the highest inventory (101,300 pcs), followed by CSD17577Q3AT (16,800 pcs) and NTTFS4C06NTAG (65,200 pcs). The AON7538 has 25,400 pcs in stock. Inventory levels affect lead times and supply chain risk. For long-term production, parts with higher inventory and Active status provide greater supply security.

Q: Can input capacitance (Ciss) differences impact switching performance?

A: Yes. Input capacitance affects gate charge requirements and switching speed. The AON7538 specifies 1128 pF @ 15V. Substitutes range from 950 pF (BSZ0589NSATMA1) to 4290 pF (RQ3E180AJTB). Higher capacitance increases gate charge and switching time, potentially reducing maximum switching frequency. Lower capacitance enables faster switching but may increase EMI. Driver circuit design must accommodate Ciss variations.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitutes are RoHS3 compliant and REACH unaffected, matching the AON7538's regulatory status. All devices carry EAR99 export classification and MSL 1 (Unlimited) moisture sensitivity level, ensuring equivalent environmental and regulatory compliance.

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