AON7520 Equivalent & Substitute Parts

Part Overview

The AON7520 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 48A (Ta) and 50A (Tc). The device is housed in an 8-DFN-EP (3.3x3.3) surface mount package and belongs to the AlphaMOS series. The AON7520 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	48	A
Continuous Drain Current @ 25°C (Tc)	50	A
Rds On (Max) @ 20A, 10V	1.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1.2	V
Gate Charge (Qg) @ 10V	105	nC
Input Capacitance (Ciss) @ 15V	4175	pF
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	8-DFN-EP (3.3x3.3)	—
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AON7520 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-source voltage rating (Vdss) must equal or exceed 30V
Continuous drain current must support the application requirements (48A Ta / 50A Tc minimum)
On-state resistance (Rds On) must not exceed specified limits to maintain thermal performance
Gate threshold voltage and gate charge characteristics must be compatible with existing gate drive circuitry
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Surface mount package type must be compatible with PCB assembly processes
Pin configuration and footprint must match or be directly compatible with the 8-DFN-EP form factor
Moisture sensitivity level must not exceed MSL 1

Compliance Criteria:

RoHS3 compliance required
REACH unaffected status required

Two substitute parts meet these criteria: AONR34332C (Alpha & Omega Semiconductor Inc.) and FDMC8010 (onsemi). Both are active products with full compliance certifications.

Parameter Comparison

Parameter	AON7520	AONR34332C	FDMC8010	Unit
Manufacturer	Alpha & Omega Semiconductor Inc.	Alpha & Omega Semiconductor Inc.	onsemi	—
Product Status	Obsolete	Active	Active	—
FET Type	N-Channel	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Vdss	30	30	30	V
Continuous Drain Current (Ta)	48	48	30	A
Continuous Drain Current (Tc)	50	50	75	A
Rds On (Max) @ Specified Conditions	1.8 @ 20A, 10V	1.8 @ 20A, 10V	1.3 @ 30A, 10V	mOhm
Gate Threshold Voltage (Vgs(th))	1.2 @ 250µA	1.2 @ 250µA	2.5 @ 1mA	V
Gate Charge (Qg) @ 10V	105	105	94	nC
Input Capacitance (Ciss) @ 15V	4175	4175	5860	pF
Vgs (Max)	±12	±12	±20	V
Operating Temperature Range	-55 to 150	-55 to 150	-55 to 150	°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Package / Case	8-PowerWDFN	8-PowerWDFN	8-PowerWDFN	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

AONR34332C (Recommended Primary Substitute)

The AONR34332C is the manufacturer-recommended equivalent from Alpha & Omega Semiconductor Inc. This part maintains identical electrical specifications to the AON7520 across all critical parameters: 30V Vdss, 48A (Ta) / 50A (Tc) continuous drain current, 1.8mOhm Rds On, and 105nC gate charge. The AONR34332C is classified as an active product with full production support, ensuring long-term availability. The part is packaged in Tape & Reel format with 30,400 units currently in stock. All compliance certifications (ROHS3, REACH Unaffected, MSL 1) are identical to the original part. Direct pin-for-pin and footprint compatibility is confirmed through the 8-PowerWDFN package designation.

FDMC8010 (Alternative Substitute)

The FDMC8010 from onsemi is an alternative substitute that meets the core voltage and package requirements. This part shares the 30V Vdss rating and 8-PowerWDFN package with the AON7520. The FDMC8010 exhibits lower on-state resistance (1.3mOhm @ 30A, 10V) and higher continuous drain current capability at case temperature (75A Tc), providing enhanced thermal performance in applications with elevated ambient temperatures. The gate threshold voltage is higher (2.5V @ 1mA) and maximum gate voltage rating is increased (±20V), which may require gate drive circuit evaluation. The FDMC8010 is an active product with 96,207 units in stock and maintains full compliance certifications. The higher input capacitance (5860pF vs. 4175pF) may impact switching speed characteristics.

Both substitute parts are active products with established supply chains and full regulatory compliance. Selection between AONR34332C and FDMC8010 depends on specific application requirements regarding gate drive voltage compatibility and thermal performance targets.

Frequently Asked Questions (FAQ)

Q: Can the AONR34332C be used as a direct replacement for the AON7520?

A: Yes. The AONR34332C is electrically and mechanically identical to the AON7520 across all specified parameters. Both parts share the same 30V Vdss rating, 48A (Ta) / 50A (Tc) continuous drain current, 1.8mOhm on-state resistance, and 8-PowerWDFN package. No circuit modifications are required for substitution.

Q: What are the key differences between AONR34332C and FDMC8010?

A: The AONR34332C maintains exact electrical equivalence to the AON7520. The FDMC8010 offers lower on-state resistance (1.3mOhm vs. 1.8mOhm) and higher case temperature drain current (75A vs. 50A), but has a higher gate threshold voltage (2.5V vs. 1.2V) and increased input capacitance (5860pF vs. 4175pF). Both parts share the same 30V voltage rating and 8-PowerWDFN package.

Q: Are there any gate drive circuit considerations when substituting with FDMC8010?

A: The FDMC8010 has a gate threshold voltage of 2.5V compared to the AON7520's 1.2V. Existing gate drive circuits must be evaluated to confirm adequate gate voltage margin. The FDMC8010 also permits higher maximum gate voltage (±20V vs. ±12V), which may provide additional design flexibility.

Q: Do all substitute parts meet the same compliance requirements?

A: Yes. Both AONR34332C and FDMC8010 are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the AON7520 compliance profile.

Q: What is the package compatibility between AON7520 and the substitute parts?

A: All three parts use the 8-PowerWDFN package designation with 8-DFN-EP (3.3x3.3) physical dimensions. PCB footprints and assembly processes are directly compatible without modification.

Q: Which substitute part should be selected for thermal-limited applications?

A: The FDMC8010 provides superior thermal performance with 75A continuous drain current at case temperature and lower on-state resistance (1.3mOhm). Applications requiring maximum thermal headroom should evaluate the FDMC8010. For applications with standard thermal requirements, the AONR34332C provides exact electrical equivalence to the original design.

Q: Are there any switching speed differences between the substitute parts?

A: The FDMC8010 has higher input capacitance (5860pF vs. 4175pF) and lower gate charge (94nC vs. 105nC). These characteristics may result in different switching speed performance. Gate drive circuit evaluation is necessary to confirm switching behavior in the target application.

Q: What is the current inventory status for substitute parts?

A: AONR34332C has 30,400 units in stock. FDMC8010 has 96,207 units in stock. Both parts are active products with established supply chains.

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