AON7518 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The AON7518 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with 24A continuous drain current in a surface mount 8-DFN-EP (3x3) package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
Rds On (Max) @ 20A, 10V	8.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 10V	22	nC
Input Capacitance (Ciss) @ 15V	1086	pF
Power Dissipation (Max) @ Tc	23	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-DFN-EP (3x3)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the AON7518 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-source voltage rating (Vdss) must equal or exceed 30V
Continuous drain current (Id) must support 24A or higher at rated conditions
Gate threshold voltage (Vgs(th)) must fall within acceptable switching range (2.2V to 2.5V)
On-resistance (Rds On) must not significantly exceed 8.8mOhm to maintain thermal performance
Operating temperature range must support -55°C to 150°C

Mechanical Compatibility Criteria:

Package type must be surface mount with compatible footprint dimensions
Mounting configuration must be compatible with 8-pin DFN or equivalent packages
Moisture sensitivity level (MSL) must be rated 1 (Unlimited) or equivalent

Compliance Requirements:

RoHS3 compliance required
REACH unaffected status preferred for supply chain continuity

The substitute parts listed below meet these criteria with variations in package form factor and specific performance characteristics that maintain functional equivalence within the application envelope.

Parameter Comparison

Parameter	AON7518	AON7380	TPH8R903NL,LQ	TPN11003NL,LQ	TSM180N03PQ33 RGG
Manufacturer	Alpha & Omega	Alpha & Omega	Toshiba	Toshiba	Taiwan Semiconductor
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	24	24	20	11	25
Rds On (Max) (mOhm)	8.8 @ 20A, 10V	6.8 @ 20A, 10V	8.9 @ 10A, 10V	11 @ 5.5A, 10V	18 @ 12A, 10V
Vgs(th) (V)	2.5 @ 250µA	2.2 @ 250µA	2.3 @ 1mA	2.3 @ 100µA	2.5 @ 250µA
Qg @ 10V (nC)	22	25	9.8	7.5	4.1 @ 4.5V
Ciss @ 15V (pF)	1086	825	820	660	345 @ 25V
Power Dissipation @ Tc (W)	23	24	24	19	21
Operating Temperature (°C)	-55 to 150	-55 to 150	to 150	to 150	to 150
Package	8-DFN-EP (3x3)	8-DFN-EP (3x3)	8-SOP Advance (5x5)	8-TSON Advance (3.1x3.1)	8-PDFN (3.1x3.08)
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	RoHS Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: AON7380

The AON7380 is the direct functional equivalent of the AON7518. Both devices are manufactured by Alpha & Omega Semiconductor Inc. within the AlphaMOS series and share identical electrical ratings (30V, 24A) and package form factor (8-DFN-EP 3x3). The AON7380 is currently in active production status, ensuring supply chain availability. The AON7380 demonstrates improved on-resistance performance (6.8mOhm versus 8.8mOhm) and maintains full RoHS3 compliance and MSL 1 rating. This part is the recommended direct replacement for new designs and production continuity.

Secondary Substitute: TSM180N03PQ33 RGG

The TSM180N03PQ33 RGG from Taiwan Semiconductor Corporation provides electrical equivalence with 30V rating and 25A continuous drain current, exceeding the AON7518 specification. The device is housed in an 8-PDFN (3.1x3.08) package, which is mechanically compatible with the original 8-DFN-EP footprint. This part is active in production and maintains RoHS3 compliance. The TSM180N03PQ33 exhibits lower gate charge (4.1nC) and input capacitance (345pF), which may provide switching efficiency benefits in certain applications. However, the on-resistance specification (18mOhm @ 12A) is higher than the original device, requiring thermal analysis for applications operating at maximum current levels.

Tertiary Substitute: TPH8R903NL,LQ

The TPH8R903NL,LQ from Toshiba Semiconductor and Storage is rated for 30V and 20A continuous drain current, representing a 4A reduction from the AON7518 specification. This device is suitable for applications where the full 24A rating is not required. The part is housed in an 8-SOP Advance (5x5) package, which requires PCB layout modification compared to the original 8-DFN-EP footprint. The TPH8R903NL,LQ is active in production and RoHS compliant. The device exhibits favorable gate charge (9.8nC) and input capacitance (820pF) characteristics.

Quaternary Substitute: TPN11003NL,LQ

The TPN11003NL,LQ from Toshiba Semiconductor and Storage is rated for 30V and 11A continuous drain current, representing a 13A reduction from the AON7518 specification. This device is applicable only to applications with significantly reduced current requirements. The part is housed in an 8-TSON Advance (3.1x3.1) package, which is mechanically similar to the original footprint. The TPN11003NL,LQ is active in production and RoHS compliant. The device exhibits the lowest gate charge (7.5nC) and input capacitance (660pF) among the substitute options.

Frequently Asked Questions (FAQ)

Q: Can the AON7380 be used as a direct replacement for the AON7518 without PCB modification?

A: Yes. The AON7380 shares the identical 8-DFN-EP (3x3) package footprint with the AON7518. No PCB layout changes are required for substitution. Both devices are manufactured by Alpha & Omega Semiconductor Inc. and maintain electrical compatibility across all critical parameters.

Q: What is the primary reason for substituting the AON7518?

A: The AON7518 is classified as obsolete. The AON7380 is the recommended replacement to ensure continued supply chain availability and production continuity. The AON7380 is currently in active production status.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (AON7380, TPH8R903NL,LQ, TPN11003NL,LQ, and TSM180N03PQ33 RGG) are RoHS compliant. The AON7380 and TSM180N03PQ33 RGG carry ROHS3 certification, while the Toshiba devices carry RoHS certification.

Q: Which substitute part has the lowest on-resistance?

A: The AON7380 exhibits the lowest on-resistance at 6.8mOhm (@ 20A, 10V), compared to the original AON7518 specification of 8.8mOhm (@ 20A, 10V). This represents improved thermal performance.

Q: Can the TSM180N03PQ33 RGG be used in applications requiring the full 24A rating?

A: The TSM180N03PQ33 RGG is rated for 25A continuous drain current, exceeding the 24A requirement. However, the on-resistance specification (18mOhm @ 12A) is higher than the original device. Thermal analysis is required to confirm suitability for applications operating at maximum current levels, as power dissipation will increase.

Q: What package modifications are required when substituting with the TPH8R903NL,LQ?

A: The TPH8R903NL,LQ is housed in an 8-SOP Advance (5x5) package, compared to the original 8-DFN-EP (3x3) package. PCB layout modification is required, including footprint redesign and potential routing changes. The larger package footprint must be accommodated in the design.

Q: Is the TPN11003NL,LQ suitable for all applications using the AON7518?

A: No. The TPN11003NL,LQ is rated for 11A continuous drain current, representing a 13A reduction from the AON7518 specification of 24A. This device is suitable only for applications where the current requirement does not exceed 11A. Current capability must be verified before substitution.

Q: What is the moisture sensitivity level (MSL) rating for all substitute parts?

A: All substitute parts carry an MSL rating of 1 (Unlimited), matching the original AON7518 specification. This indicates unlimited shelf life under standard storage conditions.

Q: Which substitute part has the lowest gate charge?

A: The TSM180N03PQ33 RGG exhibits the lowest gate charge at 4.1nC (@ 4.5V), compared to the original AON7518 specification of 22nC (@ 10V). Lower gate charge may provide switching speed advantages in certain applications.

Q: Are all substitute parts available in tape and reel packaging?

A: Yes. All substitute parts listed are available in tape and reel (TR) packaging, suitable for automated assembly processes.

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