AON7516 N-Channel MOSFET 30V 20A/30A Equivalent & Substitute Parts

Part Overview

The AON7516 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 20A at Ta and 30A at Tc. The device is housed in an 8-DFN-EP (3x3) surface mount package and is classified as "Not For New Designs," indicating its obsolescence status. This designation necessitates identification of functionally equivalent alternatives for ongoing production and design requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	20	A
Continuous Drain Current @ 25°C (Tc)	30	A
On-Resistance (Rds On) @ 20A, 10V	4.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.2	V
Gate Charge (Qg) @ 10V	33	nC
Input Capacitance (Ciss) @ 15V	1229	pF
Power Dissipation (Ta)	3.1	W
Power Dissipation (Tc)	25	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-DFN-EP (3x3)	Surface Mount
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the AON7516 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 30V
Continuous drain current must support minimum 20A at Ta
On-resistance (Rds On) must not exceed 4.5mOhm at rated conditions to maintain thermal performance
Gate threshold voltage (Vgs(th)) must be compatible with 10V drive voltage
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Surface mount package with compatible footprint (8-DFN-EP or equivalent 3x3mm form factor)
Pin configuration must match or be adaptable to existing PCB layouts
RoHS3 compliance and MSL 1 rating required for environmental and handling consistency

Regulatory Compliance:

ROHS3 compliance mandatory
REACH unaffected status required
EAR99 classification maintained

Substitute parts are grouped into two categories: direct replacements from Alpha & Omega Semiconductor (AONR36368) and cross-manufacturer alternatives (Texas Instruments, Diodes Incorporated, onsemi, Rohm Semiconductor, Panjit International Inc.) that meet or exceed the electrical specifications while maintaining package compatibility.

Parameter Comparison

Parameter	AON7516	AONR36368	CSD17577Q3A	CSD17577Q3AT	DMN3008SFGQ-7	NTTFS4C06NTAG	PJQ4404P_R2_00001	RQ3E180AJTB
Manufacturer	Alpha & Omega	Alpha & Omega	Texas Instruments	Texas Instruments	Diodes Inc.	onsemi	Panjit	Rohm
Vdss (V)	30	30	30	30	30	30	30	30
Id @ Ta (A)	20	23	35	35	17.6	11	15	18
Id @ Tc (A)	30	32	—	—	62	67	60	30
Rds On (mOhm)	4.5	5.0	4.8	4.8	4.4	4.2	6.0	4.5
Vgs(th) (V)	2.2	2.1	1.8	1.8	2.3	2.2	2.5	1.5
Qg @ 10V (nC)	33	25	35	35	86	36	12	39
Ciss @ 15V (pF)	1229	1305	2310	2310	3690	3366	1323	4290
Power Dissipation Ta (W)	3.1	4.1	2.8	2.8	0.9	0.81	2.0	2.0
Power Dissipation Tc (W)	25	24	53	53	—	31	31	30
Package	8-DFN-EP (3x3)	8-DFN-EP (3x3)	8-VSONP (3x3.3)	8-VSONP (3x3.3)	PowerDI3333-8	8-WDFN (3.3x3.3)	DFN3333-8	8-HSMT (3.2x3)
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Recommendation: AONR36368

The AONR36368 from Alpha & Omega Semiconductor is the preferred direct substitute for the AON7516. This part maintains identical package geometry (8-DFN-EP 3x3mm), identical voltage rating (30V Vdss), and exceeds the current specification (23A Ta vs. 20A Ta). The AONR36368 carries Active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and MSL 1 rating are maintained. The slightly higher on-resistance (5.0mOhm vs. 4.5mOhm) and lower gate charge (25nC vs. 33nC) represent acceptable trade-offs for an active, supported device.

Secondary Recommendations: Texas Instruments CSD17577Q3A / CSD17577Q3AT

The CSD17577Q3A and CSD17577Q3AT (differentiated by packaging: Cut Tape vs. Tape & Reel) offer superior current handling (35A Ta) and lower on-resistance (4.8mOhm). These NexFET™ series devices provide enhanced thermal performance (2.8W Ta, 53W Tc) and are classified as Active products. Package footprint differs slightly (8-VSONP 3x3.3mm vs. 8-DFN-EP 3x3mm), requiring PCB layout verification. Both maintain RoHS3 compliance and MSL 1 rating.

Tertiary Recommendations: Rohm Semiconductor RQ3E180AJTB

The RQ3E180AJTB provides equivalent current handling (18A Ta, 30A Tc) and identical on-resistance (4.5mOhm @ 18A, 4.5V). This part is Active and RoHS3 compliant. Package footprint (8-HSMT 3.2x3mm) differs from the original, requiring PCB evaluation. Note: Drive voltage specifications differ (2.5V/4.5V vs. 4.5V/10V), necessitating gate driver circuit compatibility assessment.

Lower Priority Alternatives:

DMN3008SFGQ-7 (Diodes Incorporated) and PJQ4404P_R2_00001 (Panjit International Inc.) meet voltage and basic current requirements but exhibit reduced continuous current ratings (17.6A and 15A respectively at Ta) compared to the AON7516. These are suitable only for applications with reduced current demands. NTTFS4C06NTAG (onsemi) similarly shows reduced Ta current rating (11A) despite higher Tc capability.

Compliance Verification:

All recommended substitutes maintain ROHS3 compliance, REACH unaffected status, EAR99 classification, and MSL 1 moisture sensitivity rating. Operating temperature range (-55°C to 150°C) is preserved across all alternatives.

Frequently Asked Questions (FAQ)

Q: Can the AONR36368 be used as a direct drop-in replacement for the AON7516?

A: Yes. The AONR36368 shares identical package geometry (8-DFN-EP 3x3mm), pin configuration, and voltage rating (30V). The part exceeds current specifications (23A Ta vs. 20A Ta) and maintains all regulatory compliance markers. No PCB layout modifications are required.

Q: What is the significance of the "Not For New Designs" status on the AON7516?

A: This designation indicates the part is obsolete and no longer recommended for new product development. Existing inventory may be available, but long-term supply cannot be guaranteed. Substitution is necessary for designs requiring extended production lifecycles or new product introductions.

Q: How do package differences between substitutes affect PCB compatibility?

A: The AON7516 uses 8-DFN-EP (3x3mm). Alternatives such as CSD17577Q3A (8-VSONP 3x3.3mm), NTTFS4C06NTAG (8-WDFN 3.3x3.3mm), and RQ3E180AJTB (8-HSMT 3.2x3mm) have slightly different footprints. While all are 8-pin surface mount packages, PCB pad layouts and thermal via patterns may require adjustment. Mechanical compatibility must be verified against specific PCB design files.

Q: What is the impact of on-resistance (Rds On) differences on circuit performance?

A: On-resistance directly affects power dissipation and heat generation. The AON7516 specifies 4.5mOhm @ 20A, 10V. Substitutes with higher Rds On (e.g., PJQ4404P at 6.0mOhm) will generate proportionally more heat at identical current levels. Substitutes with lower Rds On (e.g., NTTFS4C06NTAG at 4.2mOhm) reduce thermal load. Thermal design calculations must account for these differences.

Q: Are gate driver circuits compatible across all substitute parts?

A: Gate threshold voltage (Vgs(th)) and maximum gate voltage (Vgs Max) vary across substitutes. The AON7516 specifies Vgs(th) of 2.2V @ 250µA and Vgs Max of ±20V. RQ3E180AJTB differs significantly with Vgs(th) of 1.5V @ 11mA and Vgs Max of ±12V. Gate driver circuits must be evaluated for compatibility with each substitute's specifications. Existing drivers designed for the AON7516 may require adjustment for alternatives with different threshold voltages.

Q: What is the difference between Ta and Tc current ratings?

A: Ta (ambient temperature) represents continuous drain current at 25°C ambient with natural convection cooling. Tc (case temperature) represents current capability when the device case is actively cooled to 25°C, typically via thermal interface material and heatsinking. Tc ratings are higher because the junction temperature is maintained lower through enhanced heat dissipation. Application thermal design determines which rating applies.

Q: How does gate charge (Qg) affect switching performance?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Higher Qg (e.g., DMN3008SFGQ-7 at 86nC) requires more gate current and longer switching times, increasing switching losses. Lower Qg (e.g., PJQ4404P at 12nC) enables faster switching and reduced losses. Gate driver current capability must be matched to the substitute's Qg specification.

Q: Is the AONR36368 available in both Cut Tape and Tape & Reel packaging?

A: The AONR36368 is specified as available in Cut Tape (CT) & Digi-Reel® packaging. Inventory of 5543 pieces is reported as in stock. Packaging format selection depends on assembly process requirements. Confirm packaging availability with the supplier before design finalization.

Q: What certifications are maintained across all substitute parts?

A: All recommended substitutes maintain ROHS3 compliance, REACH unaffected status, and EAR99 export classification. Moisture Sensitivity Level (MSL) is uniformly rated as 1 (Unlimited) across all alternatives, indicating no special moisture control requirements during storage or handling. These compliance markers ensure regulatory and supply chain compatibility.

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