AON7502 N-Channel MOSFET 30V 21A/30A Equivalent & Substitute Parts

Part Overview

The AON7502 is an N-Channel MOSFET manufactured by Alpha & Omega Semiconductor Inc., rated for 30V drain-to-source voltage with continuous drain current of 21A at Ta (ambient temperature) and 30A at Tc (case temperature). This device is packaged in an 8-DFN-EP (3x3) surface mount configuration and is designated as Last Time Buy status. The part operates across a temperature range of -55°C to 150°C (junction temperature) and is RoHS3 compliant with MSL 1 (unlimited moisture sensitivity level).

Equivalent and substitute parts are necessary when the AON7502 reaches end-of-life status, when inventory constraints exist, or when alternative suppliers offer functionally compatible devices with equivalent electrical and mechanical characteristics. Substitute parts must maintain compatibility across critical parameters including drain-to-source voltage, continuous drain current, on-resistance, gate charge, and package form factor.

Substiute Parts

AON7502
Alpha & Omega Semiconductor Inc.In Stock: 1511AON7502 Datasheet
AON7502
Current Part
CSD17577Q3A
Texas InstrumentsIn Stock: 50024CSD17577Q3A Datasheet
CSD17577Q3A
MFR Recommended
CSD17577Q3AT
Texas InstrumentsIn Stock: 16850CSD17577Q3AT Datasheet
CSD17577Q3AT
MFR Recommended
DMN3008SFG-13
Diodes IncorporatedIn Stock: 2963DMN3008SFG-13 Datasheet
DMN3008SFG-13
MFR Recommended
DMN3008SFG-7
Diodes IncorporatedIn Stock: 101378DMN3008SFG-7 Datasheet
DMN3008SFG-7
MFR Recommended
RQ3E150BNTB
Rohm SemiconductorIn Stock: 1267RQ3E150BNTB Datasheet
RQ3E150BNTB
MFR Recommended
RQ3E160ADTB
Rohm SemiconductorIn Stock: 9207RQ3E160ADTB Datasheet
RQ3E160ADTB
MFR Recommended
RQ3E180AJTB
Rohm SemiconductorIn Stock: 20462RQ3E180AJTB Datasheet
RQ3E180AJTB
MFR Recommended
RQ3E180BNTB
Rohm SemiconductorIn Stock: 6248RQ3E180BNTB Datasheet
RQ3E180BNTB
MFR Recommended
RQ3E180GNTB
Rohm SemiconductorIn Stock: 38684RQ3E180GNTB Datasheet
RQ3E180GNTB
MFR Recommended
TPH3R003PL,LQ
Toshiba Semiconductor and StorageIn Stock: 3998TPH3R003PL,LQ Datasheet
TPH3R003PL,LQ
MFR Recommended
TPH4R003NL,L1Q
Toshiba Semiconductor and StorageIn Stock: 934TPH4R003NL,L1Q Datasheet
TPH4R003NL,L1Q
MFR Recommended
TPN4R203NC,L1Q
Toshiba Semiconductor and StorageIn Stock: 34585TPN4R203NC,L1Q Datasheet
TPN4R203NC,L1Q
MFR Recommended
TPN4R303NL,L1Q
Toshiba Semiconductor and StorageIn Stock: 6843TPN4R303NL,L1Q Datasheet
TPN4R303NL,L1Q
MFR Recommended

Key Parameters

Parameter AON7502 Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 21 A
Continuous Drain Current @ 25°C (Tc) 30 A
On-Resistance (Rds On) @ 20A, 10V 4.7 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 3 V
Gate Charge (Qg) @ 10V 22 nC
Input Capacitance (Ciss) @ 15V 1022 pF
Power Dissipation (Ta) 3.1 W
Power Dissipation (Tc) 31 W
Operating Temperature Range (TJ) -55 to 150 °C
Package Type 8-DFN-EP (3x3) Surface Mount
RoHS Status ROHS3 Compliant -
MSL Rating 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the AON7502 is determined by strict equivalence across the following critical parameters:

Voltage Rating: All substitute parts must maintain a Vdss rating of 30V to ensure safe operation within the same voltage domain.

Current Capability: Substitute parts must support continuous drain current of at least 21A at Ta or equivalent thermal conditions. Parts with higher current ratings (30A, 35A, 39A, or 88A) are acceptable as they provide equal or superior current handling without compromising circuit performance.

On-Resistance (Rds On): The AON7502 specifies 4.7mOhm at 20A and 10V. Substitute parts with on-resistance values at or below this specification ensure equivalent or improved power efficiency and thermal performance.

Package Compatibility: The AON7502 uses an 8-DFN-EP (3x3) package. Substitute parts in equivalent 8-pin surface mount packages (8-VSONP, 8-HSMT, 8-SOP Advance) are mechanically and electrically compatible with the same PCB footprint and thermal characteristics.

Temperature Range: All substitute parts must support the full operating temperature range of -55°C to 150°C (junction temperature) to maintain functional equivalence across environmental conditions.

Compliance Standards: All substitute parts must maintain RoHS3 compliance and MSL 1 rating to ensure regulatory and manufacturing process compatibility.

Parameter Comparison

Parameter AON7502 CSD17577Q3A CSD17577Q3AT DMN3008SFG-13 DMN3008SFG-7 RQ3E150BNTB RQ3E160ADTB RQ3E180AJTB RQ3E180BNTB RQ3E180GNTB TPH3R003PL,LQ
Vdss (V) 30 30 30 30 30 30 30 30 30 30 30
Id @ Ta (A) 21 35 35 17.6 17.6 15 16 18 18
Id @ Tc (A) 30 39 30 39 39 88
Rds On (mOhm) 4.7 @ 20A, 10V 4.8 @ 16A, 10V 4.8 @ 16A, 10V 4.6 @ 13.5A, 10V 4.6 @ 13.5A, 10V 5.3 @ 15A, 10V 4.5 @ 16A, 10V 4.5 @ 18A, 4.5V 3.9 @ 18A, 10V 4.3 @ 18A, 10V 4.2 @ 44A, 4.5V
Vgs(th) (V) 3 @ 250µA 1.8 @ 250µA 1.8 @ 250µA 2.3 @ 250µA 2.3 @ 250µA 2.5 @ 1mA 2.5 @ 1mA 1.5 @ 11mA 2.5 @ 1mA 2.5 @ 1mA 2.1 @ 300µA
Qg @ 10V (nC) 22 35 35 86 86 45 51 39 @ 4.5V 37 @ 4.5V 22.4 50
Ciss @ 15V (pF) 1022 2310 2310 3690 3690 3000 2550 4290 3500 1520 3825
Power Dissipation Ta (W) 3.1 2.8 2.8 0.9 0.9 2 2 2 2 2
Power Dissipation Tc (W) 31 53 53 17 30 20 20 90
Operating Temp Range (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-DFN-EP (3x3) 8-VSONP (3x3.3) 8-VSONP (3x3.3) PowerDI3333-8 PowerDI3333-8 8-HSMT (3.2x3) 8-HSMT (3.2x3) 8-HSMT (3.2x3) 8-HSMT (3.2x3) 8-HSMT (3.2x3) 8-SOP Advance (5x5)
RoHS Status ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 ROHS3 RoHS
MSL Rating 1 1 1 1 1 1 1 1 1 1 1

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

The CSD17577Q3A and CSD17577Q3AT (Texas Instruments NexFET™ series) are the primary recommended substitutes. Both devices maintain the 30V Vdss rating, exceed the AON7502 continuous drain current specification at 35A (Ta), and provide superior on-resistance performance at 4.8mOhm. These parts are Active status products with full temperature range support (-55°C to 150°C) and RoHS3 compliance. The CSD17577Q3AT variant is supplied in Tape & Reel packaging, matching the AON7502 packaging format. The 8-VSONP (3x3.3) package is mechanically compatible with the 8-DFN-EP footprint for most PCB layouts.

The RQ3E180GNTB (Rohm Semiconductor) provides excellent substitution with 18A continuous drain current at Ta and 39A at Tc, matching or exceeding the AON7502 performance envelope. On-resistance of 4.3mOhm at 18A and 10V is comparable to the AON7502. Gate charge of 22.4nC at 10V closely matches the AON7502 specification of 22nC, resulting in minimal switching characteristic changes. This part is Active status with RoHS3 compliance and MSL 1 rating.

Secondary Substitutes (Acceptable with Application Review):

The RQ3E180AJTB (Rohm Semiconductor) offers 18A at Ta and 30A at Tc with 4.5mOhm on-resistance. This part features a lower gate threshold voltage of 1.5V at 11mA and reduced maximum gate voltage of ±12V compared to the AON7502 specification of ±25V. These differences require circuit-level verification to ensure gate drive compatibility.

The RQ3E150BNTB and RQ3E160ADTB (Rohm Semiconductor) provide lower continuous drain current ratings of 15A and 16A respectively at Ta. These parts are suitable only for applications where the AON7502 operates below 15A continuous current, as they do not fully meet the 21A specification.

The DMN3008SFG-13 and DMN3008SFG-7 (Diodes Incorporated) are rated for 17.6A continuous drain current at Ta, which falls below the AON7502 21A specification. These parts are suitable for current-limited applications only.

The TPH3R003PL,LQ (Toshiba Semiconductor) is rated for 88A at Tc with superior power dissipation capability of 90W. This part is suitable for high-current applications but operates at a maximum junction temperature of 175°C, exceeding the AON7502 range. The 8-SOP Advance (5x5) package is larger than the AON7502 footprint and requires PCB layout modification.

Compliance and Regulatory Considerations:

All recommended substitute parts maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity level, ensuring compatibility with manufacturing processes and regulatory requirements. The AON7502 is designated Last Time Buy status, making substitution planning essential for long-term supply chain continuity.

Frequently Asked Questions (FAQ)

Q: Can the CSD17577Q3A be used as a direct replacement for the AON7502 without PCB modification?

A: The CSD17577Q3A uses an 8-VSONP (3x3.3) package compared to the AON7502 8-DFN-EP (3x3) package. While both are 8-pin surface mount packages with similar footprints, the VSONP package has slightly different pin spacing and thermal pad dimensions. PCB layout verification is required to confirm mechanical compatibility. The CSD17577Q3AT variant in Tape & Reel packaging is functionally identical and may offer better supply availability.

Q: What is the significance of the gate charge (Qg) parameter in selecting a substitute?

A: Gate charge determines the switching speed and gate drive circuit requirements. The AON7502 specifies 22nC at 10V. Substitute parts with significantly higher gate charge (such as DMN3008SFG at 86nC) require higher gate drive current or longer switching times, potentially affecting circuit performance. The RQ3E180GNTB at 22.4nC provides the closest match and minimal switching characteristic deviation.

Q: Why do some substitute parts list different continuous drain current values for Ta and Tc?

A: Ta (ambient temperature) and Tc (case temperature) represent different thermal measurement conditions. Ta assumes the device operates in free air at 25°C ambient, while Tc assumes the device case is maintained at 25°C through external cooling or thermal management. The AON7502 specifies 21A at Ta and 30A at Tc. Substitute parts with higher Tc ratings indicate superior thermal performance under controlled cooling conditions. For applications without active cooling, the Ta rating is the limiting specification.

Q: Is the RQ3E180AJTB suitable as a substitute despite its lower maximum gate voltage (±12V vs. ±25V)?

A: The RQ3E180AJTB maximum gate voltage of ±12V is lower than the AON7502 specification of ±25V. This difference requires verification that the gate drive circuit operates within the ±12V limit. If the application uses gate drive voltages exceeding ±12V, this part is not suitable. The gate threshold voltage of 1.5V at 11mA is also lower than the AON7502 at 3V at 250µA, requiring gate drive circuit compatibility assessment.

Q: Can the TPH3R003PL,LQ be used in applications requiring the full -55°C to 150°C temperature range?

A: The TPH3R003PL,LQ specifies a maximum junction temperature of 175°C, which exceeds the AON7502 range of -55°C to 150°C. However, the datasheet does not explicitly state the minimum operating temperature. The 8-SOP Advance (5x5) package is significantly larger than the AON7502 8-DFN-EP (3x3), requiring substantial PCB layout modification. This part is suitable only for applications with relaxed temperature requirements and available PCB space.

Q: What is the impact of on-resistance (Rds On) differences between the AON7502 and substitute parts?

A: On-resistance directly affects power dissipation and thermal performance. The AON7502 specifies 4.7mOhm at 20A and 10V. Substitute parts with lower on-resistance (such as RQ3E180BNTB at 3.9mOhm) reduce power dissipation and improve efficiency. Substitute parts with higher on-resistance (such as RQ3E150BNTB at 5.3mOhm) increase power dissipation and may require enhanced thermal management. For equivalent thermal performance, lower on-resistance is preferred.

Q: Are all substitute parts available in both Cut Tape and Tape & Reel packaging?

A: No. The CSD17577Q3A is available in Cut Tape (CT) & Digi-Reel® packaging, while the CSD17577Q3AT is available in Tape & Reel (TR) packaging. The RQ3E series parts from Rohm Semiconductor are available in Cut Tape & Digi-Reel® packaging. The DMN3008SFG series and TPH3R003PL,LQ are available in Tape & Reel packaging. Packaging format selection depends on manufacturing process requirements and supply chain logistics.

Q: What is the significance of the input capacitance (Ciss) parameter?

A: Input capacitance affects gate drive circuit design and switching speed. The AON7502 specifies 1022pF at 15V. Substitute parts with higher input capacitance (such as DMN3008SFG at 3690pF) require higher gate drive current to achieve the same switching speed. The RQ3E180GNTB at 1520pF and CSD17577Q3A at 2310pF represent moderate increases that may require gate drive circuit optimization but do not fundamentally change substitution feasibility.

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